Philips SA2411 User Manual

INTEGRATED CIRCUITS

SA2411

+20 dBm single chip linear amplifier for WLAN

Product data 2003 Feb 07
Supersedes data of 2002 Jul 31

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Philips Semiconductors Product data

TYPE NUMBER

SA241 1+20 dBm single chip linear amplifier for WLAN

1. DESCRIPTION

The SA2411 is a linear power amplifier designed for WLAN application in the 2.4 GHz band. Together with the SA2400A the chips form a
complete 802.1 1b transceiver. The SA2411 is a Si power amplifier with integrated matching and power level detector .

2. FEATURES

•75 Ω + 25j Ω differential inputs, internally matched

•50 Ω single-ended output, internally matched

•15 dB gain block

•Power detector

•Bias adjust pin

•18% efficiency at 3 V

•RF matching for SA2400A

3. APPLICATIONS

•IEEE 802.11 and 802.11b radios

•Supports DSSS and CCK modulation

•Supports data rates: 1, 2, 5.5, and 11 Mbps

•2.45 GHz ISM band wireless communication devices

Table 1. Ordering information

PACKAGE
NAME DESCRIPTION VERSION

SA2411DH TSSOP16 plastic thin shrink small outline package; 16 leads; body width 4.4 mm SOT403-1

4. BLOCK DIAGRAM

VDD_DRIVER VDD_BIAS VDD_MAIN

IN+

IN–

Power-up power mode

INPUT

MATCH

PA

SA2411

Figure 1. Block diagram

OUTPUT

MATCH

ANT

DETECTOR

SR02383

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Philips Semiconductors Product data

SA2411+20 dBm single chip linear amplifier for WLAN

5. PINNING INFORMATION

16VDD_MAIN
15
14
13
12
11
10

V

_BIAS

DD

PWRUP
GND
RF_GND
ANT
GND
MODE
GND

_DRIVER

V

DD

DETECTOR

1
2

GND

3

IN+

4

IN–

5

GND

6
7

GND

89

SA2411DH

SR02384

Figure 2. Pin configuration

Table 2. Pin description

PIN type is designated by A = Analog, D = Digital, I = Input, O = Output

SYMBOL

VDD_MAIN 1 Analog supply, VDD for power amplifier, 150 mA A
VDD_DRIVER 2 Analog supply, VDD for biasing driver, 35 mA A
GND 3 Grounding A
IN+ 4 Input pin, positive part of balanced signal AI
IN– 5 Input pin, negative part of balanced signal AI
GND 6 Grounding A
DETECTOR 7 Power detector output AO
GND 8 Grounding A
GND 9 Grounding A
MODE 10 Mode switch; floating = high gain, grounded = low gain AI
GND 11 Grounding A
ANT 12 Output pin, RF, to antenna AO
RF_GND 13 RF ground must be connected A
GND 14 Grounding A
PWRUP 15 Power up pin. HIGH = amplifier is on. LOW = amplifier is off. DI
VDD_BIAS 16 Analog supply, VDD for biasing the amplifier, 5 mA A

All GND pins should be connected to ground to guarantee the best performance.

PIN DESCRIPTION TYPE

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Philips Semiconductors Product data

SA2411+20 dBm single chip linear amplifier for WLAN

6. FUNCTIONAL DESCRIPTION

The main building-blocks are:

•Fixed gain amplifier (PA)

•Output matching

•Input matching

•Power Detector

•Power Mode

Input

The device has differential inputs so a balun is needed in the case of single ended operation, input impedance is approximately 75 Ω + 25j Ω,
balanced. The inputs can be DC biased with the pin V
transceiver chip.

Amplifier

The amplifier is a fixed gain, class AB amplifier. There is an additional pin, VDD_BIAS, to adjust the class A bias current. Reducing the class A
currents reduces the gain. This allows trade-offs to be made among gain, linearity and current.

Output matching

The output of the amplifier is matched, on chip, for a 50 Ω load. The matching includes the supply feed for the power amplifier. The pin
V

_MAIN is the main supply for the amplifier. No additional filtering is needed to meet the 802.11b spec.

DD

Power detector

The power detector detects the power level and transforms it into a low frequency current. The detector output must be loaded with a resistor to
ground for the highest accuracy. This resistor has an optimal value of 5.6 kΩ. Lower values can be used to comply with maximum input
sensitivity of ADCs, at the cost of dynamic range. The maximum voltage detected is 2.3 V .

_DRIVER. The input matching is optimized to interface with the SA2400A WLAN

DD

Power mode

This pin selects the desired gain and linearity level (13 dB or 14.5 dB gain). The low gain is more applicable to high voltage applications from

3.3 V to 3.6 V . The high gain is more applicable to low voltage applications lower than 3.3 V.

NOTE:

In order to assure optimal thermal performance, it is recommended that all ground pins be connected, and that the number of vias to ground
under the chip be maximized. In addition, the use of solder mask under the chip (for scratch protection) is not recommended.

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Philips Semiconductors Product data

SA2411+20 dBm single chip linear amplifier for WLAN

7. CONNECTIVITY DIAGRAM

V

DD

PWRUP

L1

GND

GND

PwrUp

C1

VDD

SA2411

L2

C2

L3

C4 C3

VDD

VDD

GND

RFin

IN+

C1, C2, C3 = 5.6 pF
C4 = 10 nF
R1 = optional connect to ground via 0 W resistor.
R2 = optional resistor to ground to convert current into voltage
L1, L2, L3 = Optional inductors

1 nH … 10 nH, or microstrip lines with length 1 … 10 mm.
No inductors and directly connecting all supplies to V

might cause problems. The optimal values of the inductors

DD

depends on the application board.

ANT

ANT

IN–

RFin

GND

GND

MODE

DET

R1

GND

GND

R2

V

Idet.

det

SR02385

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Philips Semiconductors Product data

SA2411+20 dBm single chip linear amplifier for WLAN

8. OPERATION

The SA2411 linear amplifier is intended for operation in the 2.4 GHz band, specifically for IEEE 802.11 1 and 2 Mbits/s DSSS, and 5.5 and 11
Msymbols/s CCK standards. Throughout this document, the operating RF frequency refers to the ISM band between 2.4 and 2.5 GHz.

Amplifier Output Power

The SA2411 linear amplifier is designed to give at least 19 dBm output power for an 11 Msymbols/s CCK modulated input carrier. At 19 dBm
output power the ACPR specs are met. The fixed gain amplifier amplifies the input signal by 14.5 dB typically.

Power Mode

The biasing can be adjusted to change the gain and therefore the maximum linear output power. For high supply voltages (>3.2 V) the low-gain
mode is advised. For low supply voltages (<3.3 V) the high-gain mode is advised.

Power Mode Pin 9 = Typical output power Typical small

signal Gain

High Floating 20.0 dBm 14.5 dB 35 mA 185 mA @ 20 dBm
Low Grounded 20.0 dBm 13 dB 28 mA 185 mA @ 20 dBm

Typical DC current
(no RF signal)

Typical Current
consumption

Power detector

The power detector current output is linear proportional with the RF output voltage. The RF output power is quadratic proportional to the RF
output voltage. Therefore, the detector is quadratic proportional to the output power. The following relation can be expressed:

P

+k

out

P

is output power in mWatt, V

out

The quadratic factor is 1.5. The sensitivity is then 49 mWatt/V2.

P

out

20 dBm = 100 mW 1.7 V 300 uA
19 dBm = 79 mW 1.4 V 250 uA
17 dBm = 50 mW 1.0 V 175 uA
15 dBm = 32 mW 0.7 V 125 uA
9 dBm = 8 mW 0.3 V 50 uA

The loading of the detector can be different in the application. The highest accuracy is achieved with 5.6 kΩ. But other values can be used to
adapt to the maximum input sensitivity of other circuits. Other detector loading values result in other k-factors. The maximum detector voltage is
limited to about 2.4 V .

Vndetector

is detector voltage in Volt, k = sensitivity in mWatt/V2, n = quadratic factor.

detector

V

(5.6 kΩ load) I

detector

detector

(5.6 kΩ in series)

DC feed at input

There is a possibility to add a DC voltage at the input pins (pin 4 and pin 5) by feeding pin 2. This option should be used in case the SA2411 is
lined up with the SA2400A.

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Philips Semiconductors Product data

SA2411+20 dBm single chip linear amplifier for WLAN

9. OPERATING CONDITIONS

The SA2411 shall meet all of the operating conditions outlined in this section. Table 3 specifies the absolute maximum ratings for the device.
Table 4 gives the recommended operating conditions.

Table 3. Absolute maximum ratings

Symbol Parameter Min Max Unit

T

stg

V

DDa

– Voltage applied to inputs –0.5 VDD+0.5 V
– Short circuit duration, to GND or V

Table 4. Recommended operating conditions

Symbol Parameter Min Nom Max Units

T

amb

V

DDa

Storage temperature –55 +150 °C
Supply voltage (analog) –0.5 +3.85 V

DD

Ambient operating temperature –40 – +85 °C
Supply voltage (analog) 2.85 3.3 3.6 V

– 1 sec

10. SA2411 TRANSMITTER REQUIREMENTS Table 5. SA2411 transmitter specifications

T

= 25 °C; VCC = 3 V; frequency = 2.45 GHz, R

amb

Specification Condition, Remarks Min Nom Max Units
DC

DC current Standard mode (pin 10 is floating) – 35 – mA
DC current Low output power mode (pin 10 is grounded) – 28 – mA
Leakage current Vpwrup = 0 V. Vss = 3.0 V – – 10 µA

AC : 802.11b MODULATION

Output back off (relative to 1 dB compression of single carrier) – 2 – dB
RF frequency 2.4 2.45 2.5 GHz
Input impedance Dif ferential (75 Ω + 25j Ω) – 100 – Ω
Load impedance Single ended – 50 – Ω

Power gain for small signal Mode = High gain, Input level = –20 dBm – 14.5 – dB
Power gain for small signal Mode = Low gain, Input level = –20 dBm – 13 – dB

Output power Meeting the FCC specs of 30 dBc and 50 dBc, mode = high – +20.0 – dBm
Current consumption “ – 200 – mA
Gain “ – 12.5 – dB
Output power Meeting the FCC specs of 30 dBc and 50 dBc, mode = low – +20.0 – dBm
Current consumption “ – 200 – mA
Gain “ – 12.5 – dB

= 5.6 kΩ, unless otherwise stated.

detector

Power ramping up time 10% to 90% ramp up – 0.5 – µs
Power ramping down (when

enabled)
Error Vector Magnitude 11 Msymbols/s QPSK. Both RF outputs. – 5 – %
Isolation Pin 15 (PWRUP) = 0 V – 15 – dB
Harmonic Suppression at 2 and 3

times fundamental frequency

2003 Feb 07

a) 90% to 10% ramp down
b) 10% to carrier leakage level

fundamental frequency output power = +20 dBm – 40 – dBc

7

– 0.5

0.5

– µs

Philips Semiconductors Product data

SA2411+20 dBm single chip linear amplifier for WLAN

Table 6. SA2411 Detector specification

T

= 25 °C, VCC = 3.0 V

amb

Specification Condition, Remarks Min Nom Max Units
GENERAL

Detector sensitivity With 5 kΩ load resistor to ground – 49 – mW/V
Detector accuracy per sample At 16 dBm –40 °C to +80 °C; from 2.7 V to 3.6 V – 0.3 – dB
Absolute accuracy From sample to sample – 0.5 – dB
Detector quadratic factor – 1.5 – –
Detector settling time From 10% to 90% of final value – 500 – ns
Spread from sample to sample 20 dBm output power – 1 – dB
Absolute detector voltage 19 dBm output power – 1.4 – V
Absolute detector voltage error From –30 °C to +80 °C;

– 0.15 – V

from 2.7 V to 3.6 V at 19 dBm output power

Detector power range +10 – +21 dBm

2

11. GRAPHS

The following graphs are only for a typical sample measured on a SA2411 test board under nominal condition applying an 11Mb/s CCK 802.11b
modulation. Corrections for input, output and supply losses have been applied. The dotted lines represent the low gain mode. The solid

lines are for the high gain mode.

The first two graphs are small signal graphs. The gain and the DC currents are plotted versus supply voltage.

50

40

30

small signal current[mA]]

20

10

2.7 2.9 3.1 3.3 3.5

DC current versus Supply Voltage

Supply Voltage[V]

Figure 3. DC current vs. supply voltage

SR02464

18.0

16.0

14.0

Small signal gain[dB]]

12.0

10.0

2.7 2.9 3.1 3.3 3.5

Figure 4. Gain vs. supply voltage

Gain versus Supply Voltage

Supply Voltage[V]

SR02465

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Philips Semiconductors Product data

SA2411+20 dBm single chip linear amplifier for WLAN

The next eight graphs are presenting the power sweep for both gain modes at nominal conditions.

22

20

18

16

Pout[dBm]

14

12

10

–4 –2 0 2 4 6 8

Output Power versus Input Power

Pin[dbm]

Figure 5. Output power vs. input power

16

15

Gain versus Output Power

SR02466

25.0%

20.0%

15.0%

10.0%

Efficiency @ 2.7Volt

5.0%

0.0%

Efficiency versus Output Power

–2 2 6 10 14 18 22

Pout[dbm]

Figure 7. Efficiency vs. output power

Current consumption vs Output Power

200

150

SR02468

14

Gain[dB]

13

12

5101520

Pout[dbm]

SR02467

Figure 6. Gain vs. output power

100

Current consumption [mA]

50

0

–10 –6 –2 2 6 10 14 18 22

Pout[dbm]

SR02469

Figure 8. Current consumption vs. output power

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Philips Semiconductors Product data

SA2411+20 dBm single chip linear amplifier for WLAN

–25

–30

–35

ACPR[dBc]

–40

–45

7 121722

ACPR versus Output Power

Pout[dbm]

SR02470

Figure 9. ACPR vs. output power

–46

–50

ALT versus Output Power

Detector Voltage versus Output Power

2

1.5

1

Detector[V]

0.5

0

8 1012 1416 182022

Pout[dbm]

SR02472

Figure 11. Detector voltage vs. output power

1.0

0.5

Detector Error versus Output Power

–54

ALT[dBc]

–58

–62

7121722

Pout[dbm]

SR02471

Figure 10. ALT vs. output power

0.0

Detector error[dB]

–0.5

–1.0

7 121722

Pout[dbm]

SR02473

Figure 12. Detector error vs. output power

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Philips Semiconductors Product data

SA2411+20 dBm single chip linear amplifier for WLAN

The next curves present the frequency dependency for an input power of +7 dBm:

21

20

19

Output Power[dBm]

18

17

2.40E+00 2.43E+00 2.45E+00 2.48E+00 2.50E+00

Output Power versus Frequency

Frequency[GHz]

SR02474

Figure 13. Output power vs. frequency

15

14

Gain versus Frequency

20.0%

15.0%

10.0%

Eficiency[%]

5.0%

0.0%

2.40E+00 2.43E+00 2.45E+00 2.48E+00 2.50E+00

Efficiency versus Frequency

Frequency[GHz]

Figure 15. Efficiency vs. frequency

–28

–30

ACPR versus frequency

SR02476

13

Gain[dB]

12

11

2.40E+00 2.43E+00 2.45E+00 2.48E+00 2.50E+00
Frequency[GHz]

SR02475

Figure 14. Gain vs. frequency

–32

ACPR[dBc]

–34

–36

2.40E+00 2.43E+00 2.45E+00 2.48E+00 2.50E+00
Frequency[GHz]

SR02477

Figure 16. ACPR vs. frequency

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Philips Semiconductors Product data

SA2411+20 dBm single chip linear amplifier for WLAN

–48

–50

–52

ALT[dBc]

–54

–56

2.40E+00 2.43E+00 2.45E+00 2.48E+00 2.50E+00

ALT versus Frequency

Frequency[GHz]

SR02478

Figure 17. ALT vs. frequency

2

1.5

Detector Voltage versus Frequency

1.0

0.5

0.0

Detector Error[dB]

–0.5

–1.0

2.40E+00 2.43E+00 2.45E+00 2.48E+00 2.50E+00

Detector Errror versus Frequency

Frequency[GHz]

SR02480

Figure 19. Detector error vs. frequency

1

Detector voltage[V]

0.5

0

2.40E+00 2.43E+00 2.45E+00 2.48E+00 2.50E+00
Frequency[GHz]

SR02479

Figure 18. Detector voltage vs. frequency

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Philips Semiconductors Product data

SA2411+20 dBm single chip linear amplifier for WLAN

The last 5 curves are characterization data for supply voltage, temperature and power. The worst-case scenario is the combination of highest
temperature/lowest supply. The best-case scenario is the combination of lowest temperature and highest supply voltage. The data has been
taken using a non-modulated carrier at 2.5 GHz.

50.00

45.00

40.00

35.00

DC current [mA]

30.00

25.00

2.8 3.0 3.2 3.4 3.6

Supply Voltage [V]

SR02481

Figure 20. DC current vs. supply voltage, mode = high

17.00

16.00

15.00

Gain [dB]

14.00

13.00

2.8 3.0 3.2 3.4 3.6

Supply Voltage [V]

SR02482

Figure 21. Gain vs. supply voltage, mode = high

–30
0
25
70
85

–30
0
25
70
85

30.00

28.00

26.00

24.00

Efficiency [%]

22.00

20.00

2.8 3.0 3.2 3.4 3.6

Supply Voltage [V]

–30
0
25
70
85

SR02484

Figure 23. Efficiency vs. supply voltage, mode = high

0.50

0.25

0.00

–0.25

Detector Error [dB]

–0.50

2.8 3.0 3.2 3.4 3.6

Supply Voltage [V]

–30
0
25
70
85

SR02485

Figure 24. Detector error vs. supply voltage, mode = high

20.00

19.00

Pout [dBm]

18.00

17.00

2.8 3.0 3.2 3.4 3.6

Supply Voltage [V]

SR02483

Figure 22. Output power vs. supply voltage, mode = high

–30
0
25
70
85

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Philips Semiconductors Product data

SA2411+20 dBm single chip linear amplifier for WLAN

12. APPLICATION WITH THE SA2400A

Next diagram is the application of the SA2400A with the SA2411.
The interface is simple. Two equal microstrip lines connect the SA2400A with the SA2411. The length of this connection should be kept to a

minimum.
The supply for the open collectors of the SA2400A is provided via pin 2 of the SA2411.
C2 is for supply voltage decoupling.

V

PWRUP

DD

PWRUP

GND

RF_GND

ANT

GND

MODE

VDD_BIAS
16 15 14 13 12 11 10 9

GND

RF connection

Other connection

SA2411

12345678

IN–

IN+

GND

VDD_MAIN

VDD_DRIVER

C2

GND

DETECTOR

GND

I

detector

3-WIRE BUS

TX_HI

DD

A_V

TX_OUT_LO

A_GND

SA2400A

TX_OUT_HI_P

AGCRESET

AGCSET

IDCOUT

A_GND

A_GND

48 47 46 45 44 43 42 41 40 39 38 37

1

2

3

4

Figure 25.

NOTE: A suggested starting point for designing the coupled microstrip lines:

Length = 1/18 λ. Width = 12 mils, Separation = 5 mils with the Dielectric constant = 4.6.
This should result in Z
There should be no ground plane under the microstrip lines.

2003 Feb 07

= 150 Ω, Zo = 75 Ω, and Z

even

= 30 Ω.

odd

14

TX_OUT_HI_M

A_GND

SEN

SDATA

SCLK

TX/RX

TX_IN_I_P/
TX_DATA_I

36

TX_IN_I_M/
TX_DATA_Q

35

TX_IN_Q_P

34

TX_IN_Q_M

33

SR02487

Philips Semiconductors Product data

SA2411+20 dBm single chip linear amplifier for WLAN

TSSOP16: plastic thin shrink small outline package; 16 leads; body width 4.4 mm SOT403-1

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Philips Semiconductors Product data

SA2411+20 dBm single chip linear amplifier for WLAN

REVISION HISTORY

Rev Date Description

_3 20030207 Product data (9397 750 10825); ECN 853-2346 29486 of 07 February 2003;

_2 20020731 Preliminary data (9397 750 10166).
_1 20020723 Preliminary data (9397 750 10144).

supersedes Preliminary data SA241 1 revision 2 of 31 July 2002 (9397 750 10166).

Modifications:

•Features (Section 2.)

– First bullet: from “75 Ω” to “75 Ω + 25j Ω ”
– delete bullet “1 dB attenuator”

•Block diagram: signal “Power mode” changed to “Power-up power mode”.

•Pin names modified.

•Functional description (Section 6.), Power mode: from “(14 dB or 14.5 dB gain)” to “(13 dB or 14.5 dB gain)”.

•Typical small signal Gain (HIGH) changed from 15 dB to 14.5 dB; (LOW) changed from 14 dB to 13 dB.

•Input impedance (nom) changed from 200 Ω to 100 Ω; Condition changed from “differential (100 + 100 Ω)” to

“differential (75 Ω + 25j Ω)”

•Gain (nom) changed from 13.0 dB to 12.5 dB.

•Output power (nom) changed from +20.5 to +20.0.

•Figures 20 through 24 modified.

•Note added below Figure 25.

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Philips Semiconductors Product data

SA2411+20 dBm single chip linear amplifier for WLAN

Data sheet status

Level

I

Data sheet status

Objective data

[1]

Product

[2] [3]

status

Development

Definitions

This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.

II

III

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

Preliminary data

Product data

http://www.semiconductors.philips.com.

Qualification

Production

This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in

order to improve the design and supply the best possible product.

This data sheet contains data from the product specification. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notification (CPCN).

Definitions

Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see

the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given
in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no
representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Disclaimers

Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be

expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree
to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products—including circuits, standard cells, and/or software—described
or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated
via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys
no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent,
copyright, or mask work right infringement, unless otherwise specified.

Contact information

For additional information please visit
http://www.semiconductors.philips.com . Fax: [phone]

For sales offices addresses send e-mail to:
[e-mail].

Document order number: 9397 750 10825

 Koninklijke Philips Electronics N.V. 2003

All rights reserved. Printed in U.S.A.

Date of release: 02-03

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2003 Feb 07

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