Philips SA2410 Datasheet
INTEGRATED CIRCUITS
SA2410
2.45GHz RF power amplifier and T/R
switch
Preliminary specification 1997 Sep 09
IC17 Data Handbook
Philips Semiconductors Preliminary specification
2.45GHz RF power amplifier and T/R switch
DESCRIPTION
The SA2410 is a GaAs monolithic power amplifier with an integrated
T/R switch designed to meet requirements for 802.11 (WLAN). The
SA2410 uses an on–chip 4 GHz oscillator to generate the negative
bias, thus eliminating the need for a negative supply. It operates
from 3V to 5.5V and consumes 125 mA with an output power of 18.5
dB (typ). It is suitable for other 2.45 GHz ISM band applications.
FEATURES
•V
=3V–5.5V
CC
•No negative bias needed
•I
=125mA (typ) @ 3.3V
CC
•P
=18.5 dB(typ)
OUT
•Gain=29dB (typ)
•Attenuation range=16dB (typ)
•LQFP–32 package
APPLICA TIONS
•802.1 1 WLAN
•2.4–2.5 GHz ISM BAND
IM3<–30dBc
IM5<–50dBc
SW
V
GND
V
GND
V
GC1
V
GC2
GND
OUT1
SA2410
IN
PA
GND
31 30 29 28 2 26 2532
1
D4
2
3
D3
4
5
6
7
8
10 11 12 13 14 19 16
9
SW
V
CTRL1
V
IN
SW
GND
GND
GND
GND
GND
GND
OSC
V
Figure 1. Pin Configuration
GND
CTRL2
V
V
OUT2
SW
D2
24
PA
OUT
23
GND
26
GND
GND
21
20
GND
19
GND
18
VG
PA
17
V
NEG
SR01422
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
32–Pin Plastic Thin Quad Flat Package –40° C+85°C SA2410 SOT401–1
GENERAL SPECIFICATIONS
Symbol Parameter Condition Min Typ Max Unit
T Temperature –40 +85 C
V
CC
I
CC
Power Amplifier
f
RF
IM3 IM3 2 tones 30 dBc
IM5 IM5 2 tones 50 dBc
T
on
T
off
Gain Small signal gain 29 dB
P
out
Eff. Efficiency 25 %
∆ Gt1 Gain variation with temp –40 to +85°C "3.5 dB
∆ Gt2 Gain variation with temp 0–70°C "2.0 dB
∆ Gr Ripple 2.45"0.05 GHz "1 dB
∆ Gvd Gain variation with supply 3.3 volts"0.3 V 0.5 dB
Supply V 3 5.5 V
Supply I 3.3 volts 125 mA
Frequency Range 2.4 2.5 GHz
Transmit power on Including neg. supply 2 µs
Xmit power down 2 µs
IM3=30dBc
Output power
IM5=50dBc
17.5 18.5 dBm
125mA@3.3 volts
1997 Sep 09
2
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