Philips SA1920BE Datasheet
SA1920
Dual-band RF front-end
Product specification
Supersedes data of 1998 Apr 07
IC17 Data Handbook
1999 Mar 02
INTEGRATED CIRCUITS
Philips Semiconductors Product specification
SA1920Dual-band RF front-end
2
1999 Mar 02 853–2057 20918
DESCRIPTION
The SA1920 is an integrated dual-band RF front-end that operates
at both cellular (AMPS, GSM and TDMA) and PCS/DCS (TDMA and
GSM) frequencies, and is designed in a 13 GHz f
T
BiCMOS
process—QUBiC1. The low-band is a combined low-noise amplifier
(LNA) and mixer. The LNA has a 1.7 dB noise figure at 881 MHz
with 17.5 dB of gain and an IIP3 of –5 dBm. The wide-dynamic
range mixer has a 10 dB noise figure at 881 MHz with 9.5 dB of gain
and an IIP3 of +5 dBm.
The high-band contains a receiver front-end, doubler and a high
frequency transmit mixer intended for closed loop transmitters. One
advantage of the high-band architecture is an image-rejection mixer
with over 30 dB of image rejection; thus, eliminating external filter
cost while saving board space. The system noise figure is 4.2 dB at
1960 MHz with a power gain of 23.5 dB and an IIP3 of –12.5 dB.
FEA TURES
•Low current consumption
•Outstanding low- and high-band noise figure
•Excellent gain stability versus temperature and supply
•Image reject high-band mixer with over 30 dB of rejection
•Increased low-band LNA gain compression during analog
transmission
•LO input and output buffers
•Frequency doubler
•On chip logic for network selection and power down
•Very small outline package
APPLICATIONS
•800 to 1000 MHz analog and digital receivers
•1800 to 2000 MHz digital receivers
•Portable radios
•Digital mobile communications equipment
PIN CONFIGURATION
GND
SR01435
21222324
25
26
27
28
29
30
31
37 38 39 40 41 42 43
1
2
3
4
5
6
181920
7
8
9
10
11
12
44 45 46 47 48
32
33
34
35
36
151617 1314
Tx ON
V
HIGH BAND IMAGE SET I
HIGH BAND LO INPUT
GND
GND
LOW BAND LO INPUT
GND
HIGH BAND IMAGE SET Q
N/C
X2 ON
N/C
GND
MIX IN
GND
Tx IF A
N/C
Rx ON
LOW BAND LO A
LOW BAND LO A
HIGH BAND LO B
HIGH BAND LO A
GND
LOW BAND IF B
LOW BAND IF A
HIGH BAND IF B
HIGH BAND IF A
SYN ON
HI/LO
N/C
GND
STRONG SIGNAL
GND
HIGH BAND LNA IN
LOW BAND LNA IN
GND
LOW BAND LNA OUT
N/C
CC
V
CC
V
CC
GND
Tx IF B
GND
Tx A
Tx B
GND
V
CC
Figure 1. Pin Configuration
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
SA1920 LQFP48 Plastic low profile quad flat package; 48 leads; body 7x7x1.4 mm SOT313-2
Philips Semiconductors Product specification
SA1920Dual-band RF front-end
1999 Mar 02
3
PIN DESCRIPTIONS
PIN
NO.
PIN NAME DESCRIPTION
1 N/C No Connection
2 Tx IF A Transmit IF A
3 Tx IF B Transmit IF B
4 GND Ground
5 MIX IN Low Band Mixer Input
6 GND Ground
7 V
CC
V
CC
8 GND Ground
9 Tx A Transmit Signal A
10 Tx B Transmit Signal B
11 GND Ground
12 N/C No Connection
13 HI/LO High Band/Low Band Control
14 SYN ON LO Buffer Power Control
15 HIGH BAND IF A High Band IF A
16 HIGH BAND IF B High Band IF B
17 LOW BAND IF A Low Band IF A
18 LOW BAND IF B Low Band IF B
19 GND Ground
20 HIGH BAND LO A High Band LO Output
21 HIGH BAND LO B High Band LO Output
22 LOW BAND LO A Low Band LO Output
23 LOW BAND LO B Low Band LO Output
24 Rx ON LNA/Mixer Power Control
25 V
CC
V
CC
26 Tx ON Tx Mixer/Driver Power
27 V
CC
V
CC
28 HIGH BAND IMAGE SET I High Band Image Set I
29 GND Ground
30 HIGH BAND LO INPUT High Band LO Connection
31 LOW BAND LO INPUT Low Band LO Connection
32 GND Ground
33 HIGH BAND IMAGE SET Q High Band Image Set Q
34 GND Ground
35 X2 ON Freq. Doubler Power Control
36 N/C No Connection
37 N/C No Connection
38 STRONG SIGNAL Strong Signal Detection
39 GND Ground
40 V
CC
V
CC
41 GND Ground
42 HIGH BAND LNA IN High Band LNA Input
43 LOW BAND LNA IN Low Band LNA Input
44 GND Ground
45 LOW BAND LNA OUT Low Band LNA Output
46 GND Ground
47 GND Ground
48 N/C No Connection
Philips Semiconductors Product specification
SA1920Dual-band RF front-end
1999 Mar 02
4
IMAGE
REJECT
MIXER
GND
N/C
MIX IN
N/C
Rx ON
LOW BAND LO B
LOW BAND LO A
HIGH BAND LO B
HIGH BAND LO A
GND
LOW BAND IF B
LOW BAND IF A
HIGH BAND IF B
HIGH BAND IF A
SYN ON
HI/LO
N/C
GND
STRONG SIGNAL
GND
HIGH BAND LNA IN
LNA OUT
GND
N/C
Tx ON
V
HIGH BAND LO INPUT
GND
LOW BAND LO INPUT
GND
HIGH BAND IMAGE SET I
GND
HIGH BAND IMAGE SET Q
N/C
X2 ON
CC
V
CC
LOW BAND LNA IN
X2
SR01436
Tx B
Tx A
GND
V
CC
Tx IF B
Tx IF A
V
CC
GND
GND
GND
GND
Figure 2. Block Diagram
Philips Semiconductors Product specification
SA1920Dual-band RF front-end
1999 Mar 02
5
T able 1. POWER DOWN CONTROL
For Applications Not Using a Frequency Doubler, each state is
defined as follows:
DOUBLER
LO BUFFER LNA MIXER
TX MIXER
DRIVER
Control State
(Hi/Lo, Syn On, Rx On, Tx On, Strong Signal, X2
ON)
High
Band
Low
Band
High
Band
Low
Band
High
Band
Low
Band
High
Band
Low
Band
x000xx Sleep Off Off Off Off Off Off Off Off Off
010000 Low-Band LO Buffer on Off Off On Off Off Off Off Off Off
011000 Low-Band Receive Normal Off Off On Off On Off On Off Off
011010 Low-Band receive Strong Signal Off Off On Off Off Off On Off Off
011100 Low-Band Transmit (Analog only) Off Off On Off On
High Bias
Off On Off On
010100 N/A Off Off On Off Off Off Off Off On
110000 High-Band LO Buffer On Of f On Off Off Off Off Off Off Off
111000 High-Band Receive Normal Off On Off On Off On Off Off Off
111010 High-Band Receive Strong Signal Off On Off Off Off On Off Off Off
110100 N/A Off On Off Off Off Off Off On Off
For Applications Using a Frequency Doubler, each state is
defined as follows:
DOUBLER
LO BUFFER LNA MIXER
TX MIXER
DRIVER
Control State
(Hi/Lo, Syn On, Rx On, Tx On, Strong Signal, X2
ON)
High
Band
Low
Band
High
Band
Low
Band
High
Band
Low
Band
High
Band
Low
Band
x000xx Sleep Off Off Off Off Off Off Off Off Off
010000 Transmit (Low and High Band) Off Off On Off Off Off Off Off Off
011000 Low-Band Receive Normal Off Off On Off On Off On Off Off
011010 Low-Band Receive Strong Signal Off Off On Off Off Off On Off Off
011110 Low-Band Transmit (Analog only) Off Off On Off On
High Bias
Off On Off Off
010100 Low-Band Transmit (GSM) Off Off On Off Off Off Off Off On
010001 Transmit (Low and High Band) On Off On Off Off Off Off Off Off
011001 Low-Band Receive Normal On Off On Off On Off On Off Off
011011 Low-Band Receive Strong Signal On Off On Off Off Off On Off Off
011111 Low-Band Transmit(Analog only) On Off On Off On
High Bias
Off On Off Off
111001 High-Band Receive Normal On On On On Off On Off Off Off
111011 High-Band Receive Strong Signal On On On Off Off On Off Off Off
110101 High-Band Transmit (GSM) On On On Off Off Off Off On Off
NOTE:
“0” is low logic state; “1” is high logic state.
Philips Semiconductors Product specification
SA1920Dual-band RF front-end
1999 Mar 02
6
OPERATION
The low-band contains both an LNA and mixer that is designed to
operate in the 800 to 1000 MHz frequency range. The high-band
contains an LNA and image-rejection mixer that is designed to
operate in the 1800 to 2000 MHz frequency range with over 30 dB of
rejection over an intermediate frequency (IF) range from 100 to
125 MHz.
Image rejection is achieved in the internal architecture by two RF
mixers in quadrature and two all-pass filters in the I and Q IF
channels that phase shift the IF by 45 and 135, respectively. The
two phase shifted IFs are recombined and buffered to produce the
IF output signal.
The LO section consists of an internal all-pass type phase shifter to
provider quadrature LO signals to the receive mixers. The all-pass
filters outputs are buffered before being fed to the receive mixers.
The transmit mixer section consists of a low-noise amplifier, and a
down-convert mixer. In the transmit mode, an internal LO buf fer is
used to drive the transmit IF down-convert mixer.
Low-Band Receive Section
The circuit contains a LNA followed by a wide-band mixer. In a
typical application circuit, the LNA output uses an external pull-up
inductor to VCC and is AC coupled. The mixer IF outputs are
differential. A typical application will load the output buffer with an
inductor across the IF outputs, a pull-up inductor to V
CC
and an AC
coupled capacitor to the matching network.
Low-Band Receive Section (Analog Transmit
Mode)
The bias current of the low-band LNA will increase during analog
transmission, which increases its gain compression point and makes
the receiver less sensitive to PA leakage power for an AMPS
application.
High-Band Receive Section
The circuit contains an LNA followed by two high dynamic range
mixers. These are Gilbert cell mixers; the internal architecture is fully
differential. The LO is shifted in phase by 45 and 135 and mixes
the amplified RF signal to create I and Q channels. The two I and Q
channels are buffered, phase shifted by 45 and 135, respectively ,
amplified and recombined internally to realize the image rejection.
The IF output is differential and of the open-collector type. A typical
application will load the output buffer with an inductor across the IF
outputs, a pull-up inductor to V
CC
and an AC coupled capacitor to
the matching network.
Control Logic Section
Pins HI/LO, SYN ON, Rx On, Tx On, Strong Signal, X2 (doubler)
On, control the logic functions. The HI/LO mode selects between
low-band and high-band operation. The SYN ON mode enables the
LO buffers independent of the other circuitry . When SYN ON is high,
all internal buffers in the LO path of the circuit are turned on, thus
minimizing LO pulling when the remainder of the receive or transmit
chain is powered-up.
The Rx ON mode enables the LO buffers when the device is in the
low-band receive normal, receive strong signal and transmit modes;
the Rx ON mode enables the LO buffers, also, when the device is in
the high-band receive normal, and receive strong signal modes.
The Tx ON mode enables the transmit mixer. The strong signal
mode, when disabled, allows the low- and high-band LNAs to
function normally; and when the strong signal mode is enabled, it
turns-off the low- and high-band LNAs. This is needed when the
input signal is large and needs to be attenuated.
The doubler (X2) on mode enables the doubler. When the doubler is
on, the input signal from the LO buffers is doubled in frequency . The
signal can be used to drive the image-rejection mixer and the output
LO high-band ports. When the doubler mode is on, all other control
logic (see table 1) functions the same.
Local Oscillator (LO) Section
The LO input directly drives the two internal all-pass networks to
provide quadrature LO to the receive mixers. A synthesizer-on (SYN
ON) mode is used to power-up all LO input buffers, thus minimizing
the pulling effect on the external VCO when entering receive or
transmit mode.
Transmit Mixer Section
The transmit mixer is used for down-conversion to the transmit IF. Its
inputs are coupled to the transmit RF which is down-converted to a
modulated transmit IF frequency , and phase-locked with the
baseband modulation.
The IF outputs are HIGH impedance (open-collector type). A typical
application will load the output buffer with an inductor across the IF
outputs, a pull-up inductor to V
CC
and AC coupled capacitors to the
matching network.
Philips Semiconductors Product specification
SA1920Dual-band RF front-end
1999 Mar 02
7
ABSOLUTE MAXIMUM RATINGS
QUANTITY SYMBOL VALUE UNIT
Input supply voltage at pins: 7, 25, 27, 40 V
CC
4.75 V
Power dissipation P
D
150 mW
Input power at all ports P
IN
+20 dBm
Operating temperature range (pin temp) T
O
–40 to+85 °C
Storage temperature range T
srg
–65 to +125 °C
DC ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all Input/Output ports are single-ended.
DC PARAMETERS
V
CC
= +3.75 V , T
A
= –40 to +85°C unless otherwise noted
QUANTITY
CONDITION SYMBOL MIN. TYP. MAX. UNIT
DC Supply voltage V
CC
3.6 3.75 3.9 V
Current Consumption: Sleep Mode X000XX I
CC
1 100
A
Low Band Receive Normal 011000 I
CC
10.1 12.5 15.2 mA
Low Band Receive Strong 011010 I
CC
8.8 mA
Low Band Transmit (Analog) 011110 I
CC
18.0 mA
Low Band Transmit (GSM) 010100 I
CC
16.0 mA
High Band Receive Normal 111000 I
CC
35.0 42.0 53.0 mA
High Band Receive Strong 111010 I
CC
38.0 mA
High Band Transmit (GSM) 110100 I
CC
21.5 mA
Frequency Doubler 8.8 mA
Logic Low Input 0 0.5 V
Logic High Input 1.9 4.0 V
Philips Semiconductors Product specification
SA1920Dual-band RF front-end
1999 Mar 02
8
AC ELECTRICAL CHARACTERISTICS
Low-Band, Dual Mode of Operation
VCC = +3.75 V , FreqRF = 881 MHz, FreqLO = 991.52 MHz, Pin = –3 dBm, TA = +25C; unless otherwise stated
PARAMETERS
Min
–3
TYP
+3
Max UNITS NOTES
System
RF Input Frequency Range 869 881 960 MHz
IF Frequency 110.52 MHz
LO Frequency 991.52 MHz
Cascaded Power Gain; includes 3dB filter loss 22.5 24 25.5 dB
Power Gain Reduction (Strong Signal Mode—LNA Off) 29 35 41 dB
Cascaded Noise Figure; includes 3dB filter loss 2.6 dB
LNA
LNA Gain 17 17.5 18 dB
LNA IIP3 –6 –5 –4 dBm
LNA Noise Figure 1.6 1.7 1.8 dB
Mixer
Mixer Gain 9 9.5 10 dB
Mixer IIP3 4 5 6 dBm
Mixer Noise Figure 9 10 11 dB
Other
Input Impedance, RF Port 50
W
Return Loss at LNA Inputs and Output –10 dB 1
Return Loss at Mixer Input and Outputs –10 dB 1
LO leakage at RF Port –42 dBm
LO Input Power –5 –3 –1 dBm
Turn ON/OFF Time 100
msec
Low-Band LO Buffer
PARAMETERS Min
–3
TYP.
+3
Max UNITS NOTES
LO Frequency 991.52 MHz
Differential Output Power –7 dBm
Differential Output Impedance 100
W
Harmonic Content –20 dBc
Input Power –5 –3 –1 dBm
Input Impedance 50
W
1
Turn On/Off T ime 30
msec
Philips Semiconductors Product specification
SA1920Dual-band RF front-end
1999 Mar 02
9
AC ELECTRICAL CHARACTERISTICS
High-Band, Single Mode of Operation
LNA and Image Reject Mixer
VCC = +3.75 V , FreqRF = 1960 MHz, FreqLO = 2070.52 MHz, Pin = –3 dBm, TA = +25C; unless otherwise stated
PARAMETERS
MIN
–3
TYP.
+3
MAX UNITS NOTES
RF Input Frequency Range 1805 1990 MHz
IF Frequency 100 110.52 125 MHz
LO Frequency 1905 2115 MHz
Power Gain 21 23.5 25 dB
Power Gain Reduction (Strong Signal Mode—LNA Off) 40 47 54 dB
Noise Figure 4.0 4.2 4.4 dB
Input Impedance, RF Port 50
W
Return Loss at Inputs –10 dB 1
LO leakage at RF Port –48 dBm
1 dB RF Input Compression Point –24 dBm
IP3 (3RD Order Intermodulation Product)
Referred to the RF Input Port
–15 –12.5 –10 dBm
(2 x LO) – (2 x RF) Spur Performance
–
p
–65 dBc
50 dBm IN Referred to RF In ut Port
Measure at LO = 2040 MHz and RF = 1985 MHz
(3 x LO) – (3 x RF) Spur Performance.
–50 dBm IN Referred to RF Input Port.
Measure at LO = 2040 MHz and RF = 2003 MHz.
–62.5 dBc
Image rejection, fRX+2fIF or f
RX
–2f
IF
Referred to the RF Input Port
30 35 dB
LO Input Power –5 –3 –1 dBm
Turn ON/OFF Time 30
msec
High-Band LO Buffer
PARAMETERS MIN
–3
TYP.
+3
MAX UNITS NOTES
LO Frequency Range 1905 2115 MHz
Differential Output Power –9 dBm
Differential Output Impedance 100
W
Harmonic Content –20 dBc
Input Power –5 –3 –1 dBm
Input Impedance 50
W
1
Turn On/Off T ime 30
msec
Philips Semiconductors Product specification
SA1920Dual-band RF front-end
1999 Mar 02
10
Frequency Doubler
PARAMETERS MIN
–3
TYP.
+3
MAX UNITS NOTES
Output Frequency Range 1905 2115 MHz
Output Power –9 dBm
Differential Output Impedance 100
W
Harmonic Content (3F, 4F, etc.) –20 dBc
Subharmonic Content (Fi) –20 dBc
Non-Harmonic Content 80 dBc
Turn On/Off T ime 30
msec
Phase Noise Degradation, ∆ f = 30kHz 6 dB
Transmit Mixer
PARAMETERS MIN
–3
TYP.
+3
MAX UNITS NOTES
TX Mixer Input Frequency 824 1910 MHz
TX RF Input Impedance, Balanced 200
W
TX Mixer Output Frequency 70 200 MHz
TX IF Load Impedance 1000
W
Maximum TX IF Load Capacitance 2 pF
Conversion Power Gain 15 16 17 dB 2
1 dB Input Compression Point –17 dBm
IIP2 20 dBm
IIP3 –9 –7 –5 dBm
Noise Figure (double sideband) 7.5 dB
Reverse Isolation T
XIN
–LO
IN
40 dB
Isolation LOIN–T
XIN
40 dB
NOTES:
1. External matching network is required.
2. From 200W input to a 1kW output.
Philips Semiconductors Product specification
SA1920Dual-band RF front-end
1999 Mar 02
11
R27
AT4
J11–2
J1–4
J2–4
J2–5
J6–5
J13–2
J13–3
J12–4
J11–5
J15–3
J20–3
J21–3
J16–2
DUT–16
DUT–17
DUT–18
DUT–19
DUT–20
DUT–21
DUT–22
DUT–23
DUT–24
DUT–1
DUT–2
DUT–3
DUT–4
DUT–6
DUT–5
DUT–7
DUT–8
DUT–11
DUT–12
DUT–9
DUT–10
DUT–13
DUT–14
DUT–15
HBLOA
HBLOB
LBLOA
HBIFA
HBIFB
LBIFA
LBIFB
GND
N/C
TXIFA
TXIFB
GND
GND
LBMIN
VCC
GND
GND
N/C
TXA
TXB
HILO
SYNON
LBLOB
RXON
2X
R1
3.92K
C23
8.2 pf
L2
330 nH
coil
A
B
C24
10 pf
R32
AT9
AP45
13
PAT–10
P1
A
B
Maleltxsma
4763–000–00
I1688
L1
A
B
330 nH
C9
5.6 pf
R2
562
C1
1000 pf
DPS1
C31
0.1 uf
L3
1 uH
C10
1000 pf
C15
100 pf
AP9
R13
1K
R3
3.92K
C18
33 pf
AP10
C19
33 pf
C2
1.5 pf
R17
51.1
AT10
13
PAT–3
I1689
4763–000–00
Maleltxsma
P2
A
B
R4
3.92K
AP42
DP33
DP34
AT1
C3
5.6 pf
L6
330 nH
C5
8.2 pf
R10
PAT–10
C27
5.6 pf
L10
330 nH
MaleLTXAC_SMA
4763–000–00
I1929
R9
1.21K
DPS1
R26
3.92K
P3
A
B
13
AT2
C7
8.2 pf
L7
C6
5.6 pf
PAT–10
C28
4.7 pf
L11
330 nH
DPS1
R25
3.92K
P5
A
B
13
330 nH
R11
4.32K
Maleltxsma
4763–000–00
I1692
R18
C4
1000 pf
C11
1000 pf
A
B
A
B
A
A
B
B
R8
3.92KR73.92KR53.92K
R6
3.92K
B
P4
Maletxsma
4763–000–00
I1691
PORT 1
PORT 2
SUM PORT
A
AT3
U2
LRPS–2–11
PAT–10
PAT–10
1
1
1
R24
1
R23
1
6
4
3
3
3
1
1
C34
33 pf
C20
33 pf
C35
33 pf
C36
33 pf
A
B
AP46
AP44
AP41
AP40
AP38
AP12
DP26
DUT–48
DUT–45
DUT–46
DUT–47
DUT–44
DUT–41
DUT–43
DUT–42
DUT–40
DUT–39
DUT–38
DUT–37
DUT–36
DUT–35
DUT–34
DUT–33
DUT–32
DUT–31
DUT–30
DUT–29
DUT–28
DUT–27
DUT–26
DUT–25
N/C
LBLOUT
RxMxGND
GND
GND
GND
LBLIN
HBLIN
VCC
GND
STRONG
N/C
N/C
X2ON
GND
LBBPS
GND
LBTNK
HBTNK
GND
HBBPS
VCC
TXON
VCC
R28
3.92K
AP43
L12
4.7 nH
332
C8
3.3 pf
R29
3.92K
R31
3.92K
AP47
AP16
AT7
C37
100 pf
C38
1000 pf
DPS1
C30
1.5 pf
C22
33 pf
L9
8.2 nH
A
B
R22
51.1
PAT–3
13
P8
Maleltxsma
4763–000–00
I1696
A
B
J29–2
J1–3
J28–3
R30
3.92K
AP16
AT8
C29
2.2 pf
C21
33 pf
L8
8.2 nH
A
B
R19
51.1
PAT–3
13
P6
Maleltxsma
4763–000–00
I1693
A
B
J26–3
C17
100 pf
C14
1000 pf
L5
BA
1 uH
C33
0.1 uf
DPS1
J28–2
J25–2
DP31
DP23
J26–2
AP14
R16
1
AT6
3.92K
B
P7
Maletxsma
4763–000–00
I1695
PORT 2
PORT 1
SUM PORT
A
AT5
U1
LRPS–2–11
PAT–3
PAT–3
R21
51.1
6
3
4
3
3
1
1
J24–4
AP36
R15
C26
10 pf
R20
51.1
C25
10 pf
J22–5
AP39
R14
3.92K
R12
1
J21–2
AP11
C16
100 pf
C12
1000 pf
L4
BA
1 uH
C32
0.1 uf
J100–4
DPS1HF
J100–2
DPS1LF
J100–3
DPS1LS
J100–5
DPS1HS
J23–4
DP19
C13
1000 pf
IMAGE
REJECT
MIXER
SR01801
1
DO NOT ASSEMBLE
SA1920
Figure 3. SA1920 Dual-Band Test Circuit
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