Philips SA1920 Datasheet

INTEGRATED CIRCUITS

SA1920

Dual-band RF front-end

Product specification
Supersedes data of 1998 Apr 07
IC17 Data Handbook




1999 Mar 02

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

DESCRIPTION

The SA1920 is an integrated dual-band RF front-end that operates
at both cellular (AMPS, GSM and TDMA) and PCS/DCS (TDMA and
GSM) frequencies, and is designed in a 13 GHz f

BiCMOS

T

process—QUBiC1. The low-band is a combined low-noise amplifier
(LNA) and mixer. The LNA has a 1.7 dB noise figure at 881 MHz
with 17.5 dB of gain and an IIP3 of –5 dBm. The wide-dynamic
range mixer has a 10 dB noise figure at 881 MHz with 9.5 dB of gain
and an IIP3 of +5 dBm.

The high-band contains a receiver front-end, doubler and a high
frequency transmit mixer intended for closed loop transmitters. One
advantage of the high-band architecture is an image-rejection mixer
with over 30 dB of image rejection; thus, eliminating external filter
cost while saving board space. The system noise figure is 4.2 dB at
1960 MHz with a power gain of 23.5 dB and an IIP3 of –12.5 dB.

PIN CONFIGURATION

Rx ON

LOW BAND LO A

LOW BAND LO A

HIGH BAND LO B

21222324

25

V

CC

26

Tx ON

27

V

CC

GND

GND

GND

X2 ON

N/C

28
29

30
31

32
33
34
35

36

37 38 39 40 41 42 43

HIGH BAND IMAGE SET I

HIGH BAND LO INPUT

LOW BAND LO INPUT

HIGH BAND IMAGE SET Q

FEATURES

•Low current consumption

•Outstanding low- and high-band noise figure

•Excellent gain stability versus temperature and supply

•Image reject high-band mixer with over 30 dB of rejection

•Increased low-band LNA gain compression during analog

transmission

•LO input and output buffers

•Frequency doubler

•On chip logic for network selection and power down

•Very small outline package

APPLICATIONS

•800 to 1000 MHz analog and digital receivers

•1800 to 2000 MHz digital receivers

•Portable radios

•Digital mobile communications equipment

HIGH BAND LO A

GND

LOW BAND IF B

LOW BAND IF A

HIGH BAND IF B

HIGH BAND IF A

SYN ON

HI/LO

181920

44 45 46 47 48

151617 1314

N/C

12

GND

11

10

Tx B

9

Tx A
GND

8

V

7

CC

GND

6

MIX IN

5

GND

4

Tx IF B

3

Tx IF A

2

N/C

1

N/C

STRONG SIGNAL

GND

CC

GND

V

GND

LOW BAND LNA IN

HIGH BAND LNA IN

LOW BAND LNA OUT

GND

GND

N/C

SR01435

Figure 1. Pin Configuration

ORDERING INFORMATION

TYPE NUMBER

NAME DESCRIPTION VERSION

SA1920 LQFP48 Plastic low profile quad flat package; 48 leads; body 7x7x1.4 mm SOT313-2

1999 Mar 02 853–2057 20918

PACKAGE

2

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

PIN DESCRIPTIONS

PIN
NO.

1 N/C No Connection
2 Tx IF A Transmit IF A
3 Tx IF B Transmit IF B
4 GND Ground
5 MIX IN Low Band Mixer Input
6 GND Ground
7 V
8 GND Ground

9 Tx A Transmit Signal A
10 Tx B Transmit Signal B
11 GND Ground
12 N/C No Connection
13 HI/LO High Band/Low Band Control
14 SYN ON LO Buffer Power Control
15 HIGH BAND IF A High Band IF A
16 HIGH BAND IF B High Band IF B
17 LOW BAND IF A Low Band IF A
18 LOW BAND IF B Low Band IF B
19 GND Ground
20 HIGH BAND LO A High Band LO Output
21 HIGH BAND LO B High Band LO Output
22 LOW BAND LO A Low Band LO Output
23 LOW BAND LO B Low Band LO Output
24 Rx ON LNA/Mixer Power Control
25 V
26 Tx ON Tx Mixer/Driver Power
27 V
28 HIGH BAND IMAGE SET I High Band Image Set I
29 GND Ground
30 HIGH BAND LO INPUT High Band LO Connection
31 LOW BAND LO INPUT Low Band LO Connection
32 GND Ground
33 HIGH BAND IMAGE SET Q High Band Image Set Q
34 GND Ground
35 X2 ON Freq. Doubler Power Control
36 N/C No Connection
37 N/C No Connection
38 STRONG SIGNAL Strong Signal Detection
39 GND Ground
40 V
41 GND Ground
42 HIGH BAND LNA IN High Band LNA Input
43 LOW BAND LNA IN Low Band LNA Input
44 GND Ground
45 LOW BAND LNA OUT Low Band LNA Output
46 GND Ground
47 GND Ground
48 N/C No Connection

PIN NAME DESCRIPTION

CC

CC

CC

CC

V

CC

V

CC

V

CC

V

CC

1999 Mar 02

3

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

HI/LO

SYN ON

HIGH BAND IF A

HIGH BAND IF B

LOW BAND IF A

LOW BAND IF B

GND

HIGH BAND LO A

HIGH BAND LO B

LOW BAND LO A

LOW BAND LO B

N/C

GND

Tx B

Tx A

REJECT

IMAGE

MIXER

GND

CC

V

X2

GND

MIX IN

GND

Tx IF B

N/C

Tx IF A

N/C

GND

GND

LNA OUT

GND

LOW BAND LNA IN

HIGH BAND LNA IN

GND

V

CC

GND

STRONG SIGNAL

Rx ON

N/C

Tx ON

CC

V

GND

HIGH BAND IMAGE SET I

HIGH BAND LO INPUT

GND

LOW BAND LO INPUT

GND

HIGH BAND IMAGE SET Q

X2 ON

N/C

SR01436

CC

V

Figure 2. Block Diagram

1999 Mar 02

4

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

T able 1. POWER DOWN CONTROL

For Applications Not Using a Frequency Doubler, each state is
defined as follows:

DOUBLER

Control State
(Hi/Lo, Syn On, Rx On, Tx On, Strong Signal, X2
ON)

x000xx Sleep Off Off Off Off Off Off Off Off Off
010000 Low-Band LO Buffer on Off Off On Off Off Off Off Off Off
011000 Low-Band Receive Normal Off Off On Off On Off On Off Off
011010 Low-Band receive Strong Signal Off Off On Off Off Off On Off Off
011100 Low-Band Transmit (Analog only) Off Off On Off On

010100 N/A Off Off On Off Off Off Off Off On
110000 High-Band LO Buffer On Off On Off Off Off Off Off Off Off
111000 High-Band Receive Normal Off On Off On Off On Off Off Off
111010 High-Band Receive Strong Signal Off On Off Off Off On Off Off Off
110100 N/A Off On Off Off Off Off Off On Off

LO BUFFER LNA MIXER

High

Band

Low

Band

High

Band

Low

Band

High Bias

High

Band

Off On Off On

Low

Band

TX MIXER

DRIVER

High

Band

Low

Band

For Applications Using a Frequency Doubler, each state is
defined as follows:

DOUBLER

Control State
(Hi/Lo, Syn On, Rx On, Tx On, Strong Signal, X2
ON)

x000xx Sleep Off Off Off Off Off Off Off Off Off
010000 Transmit (Low and High Band) Off Off On Off Off Off Off Off Off
011000 Low-Band Receive Normal Off Off On Off On Off On Off Off
011010 Low-Band Receive Strong Signal Off Off On Off Off Off On Off Off

011110 Low-Band Transmit (Analog only) Off Off On Off On

010100 Low-Band Transmit (GSM) Off Off On Off Off Off Off Off On
010001 Transmit (Low and High Band) On Off On Off Off Off Off Off Off
011001 Low-Band Receive Normal On Off On Off On Off On Off Off
011011 Low-Band Receive Strong Signal On Off On Off Off Off On Off Off

011111 Low-Band Transmit(Analog only) On Off On Off On

111001 High-Band Receive Normal On On On On Off On Off Off Off

111011 High-Band Receive Strong Signal On On On Off Off On Off Off Off
110101 High-Band Transmit (GSM) On On On Off Off Off Off On Off

LO BUFFER LNA MIXER

High

Band

Low

Band

High

Band

Low

Band

High Bias

High Bias

High

Band

Off On Off Off

Off On Off Off

Low

Band

TX MIXER

DRIVER

High

Band

Low

Band

NOTE:

“0” is low logic state; “1” is high logic state.

1999 Mar 02

5

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

OPERATION

The low-band contains both an LNA and mixer that is designed to
operate in the 800 to 1000 MHz frequency range. The high-band
contains an LNA and image-rejection mixer that is designed to
operate in the 1800 to 2000 MHz frequency range with over 30 dB of
rejection over an intermediate frequency (IF) range from 100 to
125 MHz.

Image rejection is achieved in the internal architecture by two RF
mixers in quadrature and two all-pass filters in the I and Q IF
channels that phase shift the IF by 45 and 135, respectively. The
two phase shifted IFs are recombined and buffered to produce the
IF output signal.

The LO section consists of an internal all-pass type phase shifter to
provider quadrature LO signals to the receive mixers. The all-pass
filters outputs are buffered before being fed to the receive mixers.
The transmit mixer section consists of a low-noise amplifier, and a
down-convert mixer. In the transmit mode, an internal LO buf fer is
used to drive the transmit IF down-convert mixer.

Low-Band Receive Section

The circuit contains a LNA followed by a wide-band mixer. In a
typical application circuit, the LNA output uses an external pull-up
inductor to VCC and is AC coupled. The mixer IF outputs are
differential. A typical application will load the output buffer with an
inductor across the IF outputs, a pull-up inductor to V
coupled capacitor to the matching network.

and an AC

CC

Low-Band Receive Section (Analog Transmit
Mode)

The bias current of the low-band LNA will increase during analog
transmission, which increases its gain compression point and makes
the receiver less sensitive to PA leakage power for an AMPS
application.

High-Band Receive Section

The circuit contains an LNA followed by two high dynamic range
mixers. These are Gilbert cell mixers; the internal architecture is fully
differential. The LO is shifted in phase by 45 and 135 and mixes
the amplified RF signal to create I and Q channels. The two I and Q
channels are buffered, phase shifted by 45 and 135, respectively ,
amplified and recombined internally to realize the image rejection.

The IF output is differential and of the open-collector type. A typical
application will load the output buffer with an inductor across the IF
outputs, a pull-up inductor to V
the matching network.

and an AC coupled capacitor to

CC

Control Logic Section

Pins HI/LO, SYN ON, Rx On, Tx On, Strong Signal, X2 (doubler)
On, control the logic functions. The HI/LO mode selects between
low-band and high-band operation. The SYN ON mode enables the
LO buffers independent of the other circuitry . When SYN ON is high,
all internal buffers in the LO path of the circuit are turned on, thus
minimizing LO pulling when the remainder of the receive or transmit
chain is powered-up.

The Rx ON mode enables the LO buffers when the device is in the
low-band receive normal, receive strong signal and transmit modes;
the Rx ON mode enables the LO buffers, also, when the device is in
the high-band receive normal, and receive strong signal modes.

The Tx ON mode enables the transmit mixer. The strong signal
mode, when disabled, allows the low- and high-band LNAs to
function normally; and when the strong signal mode is enabled, it
turns-off the low- and high-band LNAs. This is needed when the
input signal is large and needs to be attenuated.

The doubler (X2) on mode enables the doubler. When the doubler is
on, the input signal from the LO buffers is doubled in frequency . The
signal can be used to drive the image-rejection mixer and the output
LO high-band ports. When the doubler mode is on, all other control
logic (see table 1) functions the same.

Local Oscillator (LO) Section

The LO input directly drives the two internal all-pass networks to
provide quadrature LO to the receive mixers. A synthesizer-on (SYN
ON) mode is used to power-up all LO input buffers, thus minimizing
the pulling effect on the external VCO when entering receive or
transmit mode.

Transmit Mixer Section

The transmit mixer is used for down-conversion to the transmit IF. Its
inputs are coupled to the transmit RF which is down-converted to a
modulated transmit IF frequency , and phase-locked with the
baseband modulation.

The IF outputs are HIGH impedance (open-collector type). A typical
application will load the output buffer with an inductor across the IF
outputs, a pull-up inductor to V
matching network.

and AC coupled capacitors to the

CC

1999 Mar 02

6

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

ABSOLUTE MAXIMUM RATINGS

QUANTITY SYMBOL VALUE UNIT

Input supply voltage at pins: 7, 25, 27, 40 V
Power dissipation P
Input power at all ports P
Operating temperature range (pin temp) T
Storage temperature range T

CC

D
IN
O

srg

DC ELECTRICAL CHARACTERISTICS

Unless otherwise specified, all Input/Output ports are single-ended.

DC PARAMETERS

V

= +3.75 V, T

CC

DC Supply voltage V
Current Consumption: Sleep Mode X000XX I
Low Band Receive Normal 011000 I
Low Band Receive Strong 011010 I
Low Band Transmit (Analog) 011110 I
Low Band Transmit (GSM) 010100 I
High Band Receive Normal 111000 I
High Band Receive Strong 111010 I
High Band Transmit (GSM) 110100 I
Frequency Doubler 8.8 mA
Logic Low Input 0 0.5 V
Logic High Input 1.9 4.0 V

= –40 to +85°C unless otherwise noted

A

QUANTITY

CONDITION SYMBOL MIN. TYP. MAX. UNIT

CC
CC
CC
CC
CC
CC
CC
CC
CC

3.6 3.75 3.9 V

10.1 12.5 15.2 mA

35.0 42.0 53.0 mA

4.75 V
150 mW
+20 dBm

–40 to+85 °C

–65 to +125 °C

1 100

A

8.8 mA

18.0 mA

16.0 mA

38.0 mA

21.5 mA

1999 Mar 02

7

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

AC ELECTRICAL CHARACTERISTICS
Low-Band, Dual Mode of Operation

VCC = +3.75 V, FreqRF = 881 MHz, FreqLO = 991.52 MHz, Pin = –3 dBm, TA = +25C; unless otherwise stated

PARAMETERS

System

RF Input Frequency Range 869 881 960 MHz
IF Frequency 110.52 MHz
LO Frequency 991.52 MHz
Cascaded Power Gain; includes 3dB filter loss 22.5 24 25.5 dB
Power Gain Reduction (Strong Signal Mode—LNA Off) 29 35 41 dB
Cascaded Noise Figure; includes 3dB filter loss 2.6 dB

LNA

LNA Gain 17 17.5 18 dB
LNA IIP3 –6 –5 –4 dBm
LNA Noise Figure 1.6 1.7 1.8 dB

Mixer

Mixer Gain 9 9.5 10 dB
Mixer IIP3 4 5 6 dBm
Mixer Noise Figure 9 10 11 dB

Other

Input Impedance, RF Port 50
Return Loss at LNA Inputs and Output –10 dB 1
Return Loss at Mixer Input and Outputs –10 dB 1
LO leakage at RF Port –42 dBm
LO Input Power –5 –3 –1 dBm
Turn ON/OFF Time 100

Min

–3

TYP

+3

Max UNITS NOTES

W

msec

Low-Band LO Buffer

PARAMETERS Min

LO Frequency 991.52 MHz
Differential Output Power –7 dBm
Differential Output Impedance 100
Harmonic Content –20 dBc
Input Power –5 –3 –1 dBm
Input Impedance 50
Turn On/Off T ime 30

1999 Mar 02

8

–3

TYP.

+3

Max UNITS NOTES

msec

W

W

1

Philips Semiconductors Product specification

50 dBm IN Referred to RF In ut Port

SA1920Dual-band RF front-end

AC ELECTRICAL CHARACTERISTICS
High-Band, Single Mode of Operation

LNA and Image Reject Mixer

VCC = +3.75 V, FreqRF = 1960 MHz, FreqLO = 2070.52 MHz, Pin = –3 dBm, TA = +25C; unless otherwise stated

PARAMETERS

RF Input Frequency Range 1805 1990 MHz
IF Frequency 100 110.52 125 MHz
LO Frequency 1905 2115 MHz
Power Gain 21 23.5 25 dB
Power Gain Reduction (Strong Signal Mode—LNA Off) 40 47 54 dB
Noise Figure 4.0 4.2 4.4 dB
Input Impedance, RF Port 50
Return Loss at Inputs –10 dB 1
LO leakage at RF Port –48 dBm
1 dB RF Input Compression Point –24 dBm
IP3 (3RD Order Intermodulation Product)

Referred to the RF Input Port
(2 x LO) – (2 x RF) Spur Performance

–
Measure at LO = 2040 MHz and RF = 1985 MHz

(3 x LO) – (3 x RF) Spur Performance.
–50 dBm IN Referred to RF Input Port.
Measure at LO = 2040 MHz and RF = 2003 MHz.

Image rejection, fRX+2fIF or f
Referred to the RF Input Port

LO Input Power –5 –3 –1 dBm
Turn ON/OFF Time 30

RX

p

–2f

IF

MIN

30 35 dB

–3

–15 –12.5 –10 dBm

TYP.

–65 dBc

–62.5 dBc

+3

MAX UNITS NOTES

msec

W

High-Band LO Buffer

LO Frequency Range 1905 2115 MHz
Differential Output Power –9 dBm
Differential Output Impedance 100
Harmonic Content –20 dBc
Input Power –5 –3 –1 dBm

Input Impedance 50
Turn On/Off T ime 30

1999 Mar 02

PARAMETERS MIN

9

–3

TYP.

+3

MAX UNITS NOTES

W

W

msec

1

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

Frequency Doubler

PARAMETERS MIN

Output Frequency Range 1905 2115 MHz
Output Power –9 dBm
Differential Output Impedance 100
Harmonic Content (3F, 4F , etc.) –20 dBc
Subharmonic Content (Fi) –20 dBc
Non-Harmonic Content 80 dBc
Turn On/Off T ime 30
Phase Noise Degradation, ∆ f = 30kHz 6 dB

–3

Transmit Mixer

PARAMETERS MIN

TX Mixer Input Frequency 824 1910 MHz
TX RF Input Impedance, Balanced 200
TX Mixer Output Frequency 70 200 MHz
TX IF Load Impedance 1000
Maximum TX IF Load Capacitance 2 pF
Conversion Power Gain 15 16 17 dB 2
1 dB Input Compression Point –17 dBm
IIP2 20 dBm
IIP3 –9 –7 –5 dBm
Noise Figure (double sideband) 7.5 dB
Reverse Isolation T
Isolation LOIN–T

NOTES:

1. External matching network is required.

2. From 200W input to a 1kW output.

XIN

XIN

–LO

IN

40 dB
40 dB

–3

TYP.

TYP.

+3

+3

MAX UNITS NOTES

W

msec

MAX UNITS NOTES

W

W

1999 Mar 02

10

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

P7

B

R15

J24–4

AP36

3.92K

A

Maletxsma

4763–000–00

I1695

6

U1

SUM PORT

LRPS–2–11

PORT 2

PORT 1

3

4

3

AT5

PAT–3

1

R21

51.1

10 pf

C25

C26

J22–5

J21–2

J100–4

J100–2

J100–3

J100–5

J23–4

AP39

AP11

DPS1LF

3

R14

PAT–3

10 pf

R20

51.1

3.92K

R12

1

AT6

1

DPS1HF

DPS1LS

DPS1HS

C32

L4

1 uH
BA

C12

C16

0.1 uf

1000 pf

100 pf

DP19

C13

1000 pf

DO NOT ASSEMBLE
1

R28

J1–3

AP43

3.92K

C8

L12

3.3 pf

DPS1

C38

1000 pf

C37

100 pf

4.7 nH

R27

J28–2

J29–2

J28–3

P8

3.92K

AP16

R31

3.92K

C22

A

AT7

13

AP47

332

R29

A

C30

B

PAT–3

R22

L9

33 pf

1.5 pf

Maleltxsma

4763–000–00

I1696

51.1

8.2 nH
B

R30

J26–3

AP16

3.92K

P6

B

A

Maleltxsma

4763–000–00

I1693

AT8

PAT–3

13

R19

51.1

L8

8.2 nH

A

B

C21

33 pf

C29

2.2 pf

DPS1

C33

0.1 uf

L5

1 uH
BA

C14

1000 pf

C17

100 pf

DP31

J25–2

DP23

J26–2

AP14

R16

1

R1

AP45

DUT–48

N/C

N/C

DUT–1

L2

A

C23

3.92K

J1–4

330 nH

8.2 pf

DUT–45

DUT–46

LBLOUT

RxMxGND

SA1920

TXIFA

TXIFB

DUT–2

DUT–3

coil

B

C24

13

AT9

A

B

P1

DUT–47

GND

10 pf

R32

PAT–10

Maleltxsma

DUT–44

DUT–41

GND

GND

GND

GND

DUT–4

DUT–6

R2

562

L1

A

C9

5.6 pf

1

I1688

4763–000–00

330 nH

B

C1

DUT–43

LBLIN

LBMIN

DUT–5

1000 pf

DPS1

DUT–42

HBLIN

GND

GND

VCC

DUT–7

DUT–8

DUT–11

C15

100 pf

C10

1000 pf

B

L3

1 uH

A

C31

0.1 uf

1K

R13

AP9

J2–4

N/C

DUT–12

TXA

DUT–9

C18

R3

AP10

J2–5

DUT–40

VCC

TXB

DUT–10

33 pf

33 pf

C19

C2

1.5 pf

3.92K

R17

AT10

PA T–3

13
A

B

P2

DUT–39

GND

51.1
R4

I1689

4763–000–00

Maleltxsma

DUT–38

STRONG

3.92K

AP42

J6–5

DUT–37

N/C

HILO

DUT–13

DP33

J13–2

DUT–36

N/C

HBIFA

SYNON

DUT–14

DUT–15

C5

13

A

P3

DP34

J13–3

DUT–35

X2ON

C3

A

8.2 pf

R10

AT1

PA T–10

B

DUT–34

GND

IMAGE

REJECT

MIXER

5.6 pf

L6

330 nH

B

A

1

MaleLTXAC_SMA

4763–000–00

L10

R9

I1929

HBIFB

DUT–16

330 nH

1.21K

DUT–33

LBBPS

C27

5.6 pf

C4

B

DPS1

R26

AP46

1000 pf

3.92K

J11–2

DUT–32

DUT–31

GND

LBTNK

LBIFA

DUT–17

C7

8.2 pf
L7

A

A

C6

5.6 pf
1

R18

AT2

PA T–10

13

A

B

P5

Maleltxsma

LBIFB

DUT–18

C28

4.7 pf

330 nH

B

L11

330 nH

B

R11

4.32K

DPS1

4763–000–00

I1692

C11

DUT–30

HBTNK

1000 pf

R25

AP44

J12–4

U2

3.92K

DUT–29

DUT–28

DUT–27

DUT–26

DUT–25

GND

1

R24

1

1

AT4

AT3

PAT–10

3

3

3

4

PORT 1

PORT 2

SUM PORT

LRPS–2–11

6

A

B

P4

Maletxsma

4763–000–00

VCC

HBBPS

2X

HBLOA

HBLOB

GND

DUT–19

DUT–20

DUT–21

C34

33 pf

1

R23

PAT–10

C20

33 pf

R8

3.92KR73.92KR53.92K

I1691

AP41

AP40

J11–5

J15–3

C36

33 pf

R6

AP38

TXON

LBLOA

DUT–22

C35

33 pf

3.92K

J20–3

LBLOB

DUT–23

AP12

J21–3

VCC

RXON

DUT–24

DP26

J16–2

SR01801

Figure 3. SA1920 Dual-Band Test Circuit

1999 Mar 02

11