Philips S1A, S1D, S1J, S1G, S1M Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D168

S1 series

SMA controlled avalanche rectifiers

Product specification 2000 Feb 14

Philips Semiconductors Product specification

SMA controlled avalanche rectifiers S1 series

FEATURES

• Glass passivated

• High maximum operating temperature

• Ideal for surface mount automotive applications

• Low leakage current

DESCRIPTION

DO-214AC surface mountable package with glass
passivated chip.

The well-defined void-free case is of a transfer-moulded
thermo-setting plastic.The small rectangular package has
two J bent leads.

• Excellent stability

• Guaranteed avalanche energy absorption capability

• UL 94V-O classified plastic package

• Shipped in 12 mm embossed tape

• Marking: cathode, date code, type code

lumns

ka

cathode
band

• Easy pick and place.

Top view Side view

MSA474

Fig.1 Simplified outline (DO-214AC) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

S1A − 50 V
S1B − 100 V
S1D − 200 V
S1G − 400 V
S1J − 600 V
S1K − 800 V
S1M − 1000 V

V

R

continuous reverse voltage

S1A − 50 V
S1B − 100 V
S1D − 200 V
S1G − 400 V
S1J − 600 V
S1K − 800 V
S1M − 1000 V

2000 Feb 14 2

Philips Semiconductors Product specification

SMA controlled avalanche rectifiers S1 series

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RMS

I

F(AV)

I

FSM

T

stg

T

j

root mean square voltage

S1A − 35 V
S1B − 70 V
S1D − 140 V
S1G − 280 V
S1J − 420 V
S1K − 560 V
S1M − 700 V

average forward current averaged over any 20 ms period;

− 1A

Ttp= 110 °C; see Fig.2

non-repetitive peak forward current t = 8.3 ms half sine wave;

S1A to S1J − 30 A
S1K and S1M − 25 A

Tj=25°C prior to surge;
VR=V

RRMmax

storage temperature −65 +175 °C
junction temperature See Fig.3 −65 +175 °C

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

F

I

R

forward voltage IF= 1 A; see Fig.4 − 1.1 V
reverse current VR=V

RRMmax

; see Fig.5
S1A to S1J − 1 µA
S1K and S1M − 5 µA

V

R=VRRMmax

t

rr

reverse recovery time when switched from IF= 0.5 A to IR=1A;

; Tj= 165 °C; see Fig.5 − 50 µA

1 −µs

measured at IR= 0.25 A; see Fig.9

C

d

diode capacitance VR= 4 V; f = 1 MHz; see Fig.6 8 − pF

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point; see Fig.7 27 K/W
thermal resistance from junction to ambient note 1 100 K/W

note 2 150 K/W

Notes

1. Device mounted on Al

printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm.

2O3

2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm. For more
information please refer to the

‘General Part of associated Handbook’

.

2000 Feb 14 3

Philips Semiconductors Product specification

SMA controlled avalanche rectifiers S1 series

GRAPHICAL DATA

handbook, halfpage

2

I

F(AV)

(A)

1.5

1

0.5

0

0 40 200

VR=V

; δ = 0.5; a = 1.57.

RRMmax

80

120 160

Ttp (°C)

Fig.2 Maximum permissible average forward

current as a function of tie-point
temperature (including losses due to
reverse leakage).

MCD822

200

handbook, halfpage

T

j

(°C)

160

120

80

DG JKM

40

0

0 400 1200

Device mounted as shown in Fig.8.
Solid line: Al2O3 printed-circuit board.
Dotted line: epoxy printed-circuit board.

800

MGD483

VR (V)

Fig.3 Maximum permissible junction temperature

as a function of reverse voltage.

2

10

handbook, halfpage

I

F

(A)

10

1

−1

10

−2

10

−3

10

Tj=25°C.

1.5 2

MCD795

VF (V)

Fig.4 Forward current as a function of forward

voltage; typical values.

VR (%V

MCD802

Rmax

1000 20 40

)

2

10

handbook, halfpage

I

R

(µA)

10

1

−1

10

−2

10

−3

2.50 0.5 1

10

Tj = 165 °C

Tj = 25 °C

60 80

Fig.5 Reverse current as a function of reverse

voltage; typical values.

2000 Feb 14 4