Philips RZ1214B65Y Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

fpage

M3D034

RZ1214B65Y

NPN microwave power transistor

Product specification
Supersedes data of 1997 Feb 18

1999 Dec 24

Philips Semiconductors Product specification

NPN microwave power transistor RZ1214B65Y

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistor providing excellent

current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics
and excellent lifetime

• Multicell geometry gives good balance of dissipated
power and low thermal resistance

• Internal input and output matching ensures good
stability and allows an easier design of wideband
circuits.

APPLICATIONS

• Intended for use in common base class C wideband
pulsed poweramplifiers for L-band radar applications in
the 1.2 to 1.4 GHz band.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.

PINNING - SOT443A

PIN DESCRIPTION

1 collector
2 emitter
3 base connected to flange

handbook, halfpage

1

2

Top view

Fig.1 Simplified outline and symbol.

c

b

3

e

MAM314

QUICK REFERENCE DATA

Microwave performance up to Tmb=25°C in a common base class-C wideband amplifier.

MODE OF OPERATION

Class-C; t

= 150 µs; δ = 5% 1.2 to 1.4 50 ≥70 ≥7 ≥35 see Fig4

p

f

(GHz)

V

(V)

CC

P

(W)

L

G

(dB)

p

η

C

(%)

Zi; Z

(Ω)

L

WARNING

Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1999 Dec 24 2

Philips Semiconductors Product specification

NPN microwave power transistor RZ1214B65Y

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

CES

V

EBO

I

C

P

tot

T

stg

T

j

T

sld

collector-base voltage open emitter − 65 V
collector-emitter voltage open base − 15 V
collector-emitter voltage RBE=0Ω−60 V
emitter-base voltage open collector − 3V
collector current (DC) tp≤ 150 µs; δ≤5% − 6A
total power dissipation Tmb≤ 75 °C;

− 225 W

tp≤ 150 µs; δ≤5%
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature at 0.2 mm from the case;

− 235 °C

t ≤ 10 s

250

handbook,

P

tot

(W)

200

150

100

50

0

0 50 100 200

tp= 150 µs; δ=5%.

MGD977

150

Tmb (°C)

Fig.2 Power derating curve.

1999 Dec 24 3