Philips RZ1214B35Y Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
RZ1214B35Y
NPN microwave power transistor
Product specification
Supersedes data of June 1992
1997 Feb 18
Philips Semiconductors Product specification
NPN microwave power transistor RZ1214B35Y
FEATURES
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistor providing excellent
current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics
and excellent lifetime
• Multicell geometry gives good balance of dissipated
power and low thermal resistance
• Internal input matching ensures good stability and
allows an easier design of wideband circuits.
APPLICATIONS
• Common base class-C wideband pulsed power
amplifiers for L-band radar applications in the
1.2 to 1.4 GHz band.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.
PINNING - SOT443A
PIN DESCRIPTION
1 collector
2 emitter
3 base connected to flange
handbook, halfpage
1
2
Top view
Fig.1 Simplified outline and symbol.
c
b
3
e
MAM314
QUICK REFERENCE DATA
Microwave performance up to T
MODE OF OPERATION
Class-C; t
= 150 µs; δ = 5% 1.2 to 1.4 50 ≥35 ≥7 ≥30 see Fig4
p
=25°C in a common base class-C wideband amplifier.
mb
f
(GHz)
V
(V)
CC
P
(W)
L
G
(dB)
p
η
C
(%)
Zi; Z
(Ω)
L
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18 2
Philips Semiconductors Product specification
NPN microwave power transistor RZ1214B35Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage open emitter − 65 V
collector-emitter voltage open base − 15 V
collector-emitter voltage RBE=0Ω−60 V
emitter-base voltage open collector − 3V
collector current (DC) tp≤ 150 µs; δ≤5%≤−3A
total power dissipation Tmb≤ 75 °C;
− 125 W
tp≤ 150 µs; δ≤5%
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature at 0.2 mm from the case;
− 235 °C
t ≤ 10 s
150
handbook, halfpage
P
tot
(W)
100
50
0
0 50 100 200
tp= 150µs; δ=5%.
MGD974
150
Tmb (°C)
Fig.2 Power derating curve.
1997 Feb 18 3
Loading...