Philips RX1214B80W Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

RX1214B80W; RX1214B130Y

NPN microwave power transistors

Product specification
Supersedes data of November 1994

1997 Feb 14

Philips Semiconductors Product specification

NPN microwave power transistors RX1214B80W; RX1214B130Y

FEATURES

• Suitable for short and medium
pulse applications up to 1 ms pulse
width, 10% duty factor

• Diffused emitter ballasting resistors
improve ruggedness

• Interdigitated emitter-base
structure provides high emitter
efficiency

• Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime

• Multicell geometry improves power
sharing and reduces thermal
resistance

• Internal input and output
prematching networks allow an
easier design of circuits.

APPLICATIONS

Common-base class C broadband
pulsed power amplifiers for radar
applications in the 1.2 to 1.4 GHz
band. Also suitable for long pulse,
heavy duty operation within this band.

DESCRIPTION

NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package, with base connected to
flange.

QUICK REFERENCE DATA

Microwave performance up to T

=25°C in a common-base class C

mb

narrowband amplifier.

MODE OF

OPERATION

Class C
RX1214B80W

Class C
RX1214B130Y

CONDITIONS

= 500 µs;

t

p

δ = 10%

= 150 µs;

t

p

δ =5%

f

(GHz)

1.2 to

1.4

1.2 to

1.4

PINNING - SOT439A

PIN DESCRIPTION

1 collector
2 emitter
3 base connected to flange

handbook, 4 columns

Top view

1

2

Fig.1 Simplified outline and symbol.

V

(V)

CC

P

(W)

G

L

p

(dB)

40 ≥80 ≥7 ≥35

50 ≥130 ≥7 ≥35

c

b

33

e

MAM045

η

(%)

C

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 14 2

Philips Semiconductors Product specification

NPN microwave power transistors RX1214B80W; RX1214B130Y

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

CES

V

EBO

I

C

P

tot

T

stg

T

j

T

sld

Note

1. Up to 0.2 mm from ceramic.

collector-base voltage open emitter − 65 V
collector-emitter voltage open base − 15 V
collector-emitter voltage RBE=0Ω−60 V
emitter-base voltage open collector − 3V
collector current (DC) tp≤ 150 µs; δ≤5% − 9A
total power dissipation Tmb<75°C; tp≤ 150 µs; δ≤5% − 280 W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C

Tmb (

MGA256

o

C)

300

handbook, halfpage

P

tot

(W)

200

100

0

−50 50

tp= 150µs; δ = 5%; P

tot max

150

= 280 W.

Fig.2 Maximum power dissipation derating as a

function of mounting base temperature.

250

1997 Feb 14 3

Philips Semiconductors Product specification

NPN microwave power transistors RX1214B80W; RX1214B130Y

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Z

th j-h

Notes

1. See

“Mounting recommendations in the General part of handbook SC19a”

2. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

I

EBO

V

(BR)CES

thermal resistance from junction to mounting base Tj= 120 °C 1.75 K/W
thermal resistance from mounting base to heatsink note 1 0.2 K/W
thermal impedance from junction to heatsink tp= 150 µs; δ = 5%;

0.4 K/W

notes 1 and 2

.

collector cut-off current IE= 0; VCB=50V − 6mA
emitter cut-off current IC= 0; VEB= 1.5 V − 0.6 mA
collector-emitter breakdown voltage IC= 60 mA; VBE=0 60 − V

APPLICATION INFORMATION

Microwave performance up to T

MODE OF

OPERATION

Class C t

CONDITIONS

= 150 µs; δ = 5% 1.2 to 1.4 50 ≥130; typ. 140 ≥7; typ. 7.5 ≥35; typ. 39

p

t

= 500 µs; δ = 10% 1.2 to 1.4 40 typ. 80 typ. 8.5 typ. 40

p

=25°C in a common-base test circuit as shown in Fig.3.

mb

f

(GHz)

V

(V)

CC

P

(W)

L

G

(dB)

p

η

C

(%)

List of components (see Fig.3)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

L1 0.5 mm copper wire total length = 15 mm
C1 trimmer capacitor 0.6 − 5 pF Tekelec, ref AT3-7271SL
C2 chip capacitor
C3 tantalum capacitor 10 µF, 50 V
C4 feedthrough bypass capacitor Erie, ref.1250-003

1997 Feb 14 4