Philips RX1214B300Y Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
RX1214B300Y
NPN microwave power transistor
Product specification
Supersedes data of June 1992
1997 Feb 19
Philips Semiconductors Product specification
NPN microwave power transistor RX1214B300Y
FEATURES
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics
and excellent lifetime
• Multicell geometry improves power sharing and reduces
thermal resistance
• Internal input and output matching networks for an easy
circuit design.
APPLICATIONS
• Common base class-C wideband amplifiers operating
under pulsed conditions, recommended for L-band
radar applications.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT439A metal ceramic flange package with the base
connected to the flange.
PINNING - SOT439A
PIN DESCRIPTION
1 collector
2 emitter
3 base connected to flange
lumns
Top view
Fig.1 Simplified outline and symbol.
1
c
b
33
2
MAM045
e
QUICK REFERENCE DATA
Microwave performance at T
MODE OF OPERATION
Class-C
= 150 µs; δ =5%
t
p
≤ 25 °C in a common base class-C wideband amplifier.
mb
f
(GHz)
V
(V)
CC
P
(W)
L
G
P
(dB)
η
(%)
C
1.2 to 1.4 50 ≥250 ≥7 ≥35 see Fig 6
Zi; Z
(Ω)
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
L
1997 Feb 19 2
Philips Semiconductors Product specification
NPN microwave power transistor RX1214B300Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage open emitter − 65 V
collector-emitter voltage RBE=0Ω−60 V
emitter-base voltage open collector − 3V
collector current (DC) tp≤ 150 µs; δ =5% − 21 A
total power dissipation tp≤ 150 µs; δ =5%;
− 570 W
Tmb=75°C
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature at 0.2 mm from case; t ≤ 10 s − 235 °C
800
handbook, halfpage
P
tot
(W)
600
400
200
0
−50 0 200
tp= 150µs; δ =5%
MGD976
50 100 150
Tmb (°C)
Fig.2 Power derating curve.
1997 Feb 19 3
Philips Semiconductors Product specification
NPN microwave power transistor RX1214B300Y
THERMAL CHARACTERISTICS
T
= 100 °C unless otherwise specified
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
Z
th j-h
Notes
1. See “
2. Equivalent thermal impedance under nominal pulse microwave operating conditions.
CHARACTERISTICS
=25°C unless otherwise specified
T
mb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
I
EBO
thermal resistance from junction to mounting-base 0.8 K/W
thermal resistance from mounting base to heatsink note 1 0.2 K/W
thermal impedance from junction to heatsink tp= 150 µs; δ =5%;
0.22 K/W
notes 1 and 2
Mounting recommendations in the General part of handbook SC19a”
.
collector-base breakdown voltage IC= 140 mA; IE=0 65 − V
collector-emitter breakdown voltage IC= 140 mA; RBE=0Ω 60 − V
emitter-base breakdown voltage IC= 0; IE=20mA 3 − V
collector cut-off current VCB= 50 V; IE=0 − 14 mA
emitter cut-off current VEB= 1.5 V; IC=0 − 1.4 mA
APPLICATION INFORMATION
Microwave performance at T
MODE OF OPERATION
Pulsed
= 150 µs; δ =5%
t
p
t
= 300 µs; δ = 10 % 1.2 to 1.4 50 typ. 300 typ. 7.5 typ. 35 see Fig 6
p
≤ 25 °C in a common base class C wideband amplifier.
mb
f
(GHz)
V
(V)
CC
P
(W)
L
1.2 to 1.4 50 ≥250
typ. 320
G
P
(dB)
≥7
typ. 8
η
C
(%)
≥35
typ. 40
see Fig 6
Zi; Z
(Ω)
L
1997 Feb 19 4
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