Philips RX1214B170W Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
RX1214B170W
Microwave power transistor
Product specification
Supersedes data of December 1994
1997 Feb 18
Philips Semiconductors Product specification
Microwave power transistor RX1214B170W
FEATURES
• Suitable for short and medium
pulse applications up to 1 ms pulse
width, 10% duty factor
• Diffused emitter ballasting resistors
improve ruggedness
• Interdigitated emitter-base
structure provides high emitter
efficiency
• Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
• Multicell geometry improves power
sharing and reduces thermal
resistance
• Internal input and output
prematching networks allow an
easier design of circuits.
APPLICATIONS
Intended for use in common-base
class C broadband pulsed power
amplifiers for radar applications in the
1.2 to 1.4 GHz band. Also suitable for
long pulse, heavy duty operation
within this band.
DESCRIPTION
QUICK REFERENCE DATA
Microwave performance up to T
=25°C in a common base class C
mb
narrowband amplifier.
MODE OF
OPERATION
Class C t
CONDITIONS
= 500 µs;
p
f
(GHz)
1.2 to 1.4 42 ≥170 ≥6.7 ≥40
δ = 10%
PINNING - SOT439A
PIN DESCRIPTION
1 collector
2 emitter
3 base connected to flange
k, 4 columns
Top view
1
33
2
MAM045
V
(V)
CC
b
P
(W)
c
e
G
L
(dB)
η
p
C
(%)
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package, with base connected to
Fig.1 Simplified outline and symbol.
flange.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18 2
Philips Semiconductors Product specification
Microwave power transistor RX1214B170W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
collector-base voltage open emitter − 65 V
collector-emitter voltage RBE=0 − 65 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
collector current tp≤ 150 µs; δ≤5% − 15 A
total power dissipation Tmb≤ 75 °C; tp≤ 150 µs; δ≤5% − 350 W
storage temperature −65 +200 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C
400
handbook, halfpage
P
tot
(W)
300
200
100
0
0 50 100 200
tp= 150µs; δ = 5%.
150
T ( C)
Fig.2 Power derating curve.
mb
MLC453
o
1997 Feb 18 3
Philips Semiconductors Product specification
Microwave power transistor RX1214B170W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
Z
th
Notes
1. See
“Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
mb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
V
(BR)CES
thermal resistance from junction to mounting base Tj= 120 °C 1.9 K/W
thermal resistance from mounting base to heatsink note 1 0.2 K/W
thermal impedance from junction to heatsink tp= 500 µs; δ = 10%;
0.28 K/W
notes 1 and 2
collector cut-off current IE= 0; VCB=50V − 20 mA
emitter cut-off current IC= 0; VEB= 1.5 V − 2mA
collector-emitter breakdown voltage IC= 60 mA; VBE=0 65 − V
APPLICATION INFORMATION
Microwave performance up to T
MODE OF
OPERATION
Class C t
CONDITIONS
= 500 µs; δ = 10% 1.2 to 1.4 42 170 ≥6.7
p
=25°C in a common-base test circuit as shown in Fig.3; note 1.
mb
f
(GHz)
V
(V)
CC
P
(W)
L
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
G
p
(dB)
typ. 7.2
η
C
(%)
≥40
typ. 45
1997 Feb 18 4
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