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RF
installation Guide
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Philips RF installation Guide

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Page 1
Semiconductors
5thedition
Product and design manual for RF Products
October 2004
Appendix RF Manual
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Philips Semiconductors
RF Manual
APPENDIX
Product and design manual for RF Products
1.2 RF transmission system
Simplex
5th edition
Half duplex
Full duplex
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RF Manual Appendix October 2004 28 of 35
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Philips Semiconductors
RF Manual
APPENDIX
Product and design manual for RF Products
1.3 RF Front -End
5th edition
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RF Manual Appendix October 2004 29 of 35
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Philips Semiconductors
RF Manual
APPENDIX
Product and design manual for RF Products
5th edition
Appendix F: RF Design- basics
Complete RF Design-basics in previous RF Manual (4th edition). RF
Manual 4th edition downloadable via RF Manual website:
http://www.philips.semiconductors.com/markets/mms/products/discretes/documentation/rf_manual
For: Fundamentals and RF Amplifier design Fundamentals, download RF Manual 4th edition on the RF Manual website.
Small signal RF amplifier parameters
1. Transistor parameters, DC to microwave
At low DC currents and voltages, one can assume a transistor acts like a voltage-controlled current source with diode clamping action in the base-emitter input circuit. In this model, the transistor is specified by its large signal DC-parameters, i.e., DC-current gain (B, ß, hfe), maximum power dissipation, breakdown voltages and so forth.
U
BE
V
T
eII ⋅=
COC
Thermal Voltage: VT=kT/q≈26mV@25°C ICO=Collector reverse saturation current
Low frequency voltage gain:
I
Current gain
C
ß =
I
r ='
e
V ≈
B
V
T
I
E
R
C
u
'
r
e
Increasing the frequency to the audio frequency range, the transistor’s parameters get frequency ­dependent phase shift and parasitic capacitance effects. For characterization of these effects, small signal h-parameters are used. These hybrid parameters are determined by measuring voltage and current at one terminal and by the use of open or short (standards) at the other port. The h-parameter matrix is shown below.
h-Parameter Matrix:
u
1
=
i
2
hh
1211
hh
2221
i
1
∗
 
u
2
Increasing the frequency to the HF and VHF ranges, open ports become inaccurate due to electrically stray field radiation. This results in unacceptable errors. Due to this phenomenon y-parameters were developed. They again measure voltage and current, but use of only a “short” standard. This “short” approach yields more accu rate results in this frequency region. The y-parameter matrix is shown below.
y-Parameter Matrix:
i
1
=
i
2
yy
yy
u
1211
2221
1
∗
 
u
2
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Philips Semiconductors
RF Manual
APPENDIX
Product and design manual for RF Products
5th edition
Further increasing the frequency, the parasitic inductance of a “short” causes problem due to mechanical depending parasitic. Additionally, measuring voltage, current and it’s phase is quite tricky. The scattering parameters, or S-parameters, were developed based on the measurement of the forward and backward traveling waves to determine the reflection coefficients on a transistor’s terminals (or ports). The S-parameter matrix is shown below.
S-Parameter Matrix:
b
1
=
b
2
SS SS
a
1211
2221
1
∗
 
a
2
2. Definition of the S-Parameters
Every amplifier has an input port and an output port (a 2-port network). Typically the input port is labeled Port-1 and the output is labeled Port-2.
Matrix:
Equation:
b
1
=
b
2
SS
SS
Figure 10: Two-port Network’s (a) and (b) waves
The forward-traveling waves (a) are traveling into the DUT’s (input or output) ports. The backward-traveling waves (b) are reflected back from the DUT’s ports
The expression “port ZO terminate” means the use of a 50Ω-standard. This is not a conjugate complex power match! In the previous chapter the reflection coefficient was defined as:
Reflection coefficient:
r =
ng waveback runni
nning waveforward ru
b
Calculating the input reflection factor on port 1:
S
That means the source injects a forward-traveling wave (a1) into Port-1. No forward-traveling power
(a2) injected into Port-2. The same procedure can be done at Port-2 with the
b
Output reflection factor:
S
2
with the input terminated in ZO.
22
0
==a
1
a
2
waveoutput
Gain is defined by:
gain
=
waveinput
The forward-traveling wave gain is calculated by the wave (b2) traveling out off Port-2 divided by the wave (a1) injected into Port-1.
b
S
2
21
0
==a
2
a
1
1
with the output terminated in ZO.
11
0
==a
2
a
1
a
1211
2221
⋅+⋅=
⋅+⋅=
1
∗
 
aSaSb
2121111
aSaSb
2221212
a
2
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Philips Semiconductors
RF Manual
APPENDIX
Product and design manual for RF Products
IN OUT
Detector
Forward transmission:
(
)
(
)
(
)
(
)
(
)
5th edition
The backward traveling wave gain is calculated by the wave (b1) traveling out off Port-1 divided by
b
the wave (a2) injected into Port-2.
The normalized waves (a) and (b) are defined as:
1
a
2
a
2
b
2
b
2
( )
Z
O
1
( )
Z
O
1
( )
Z
O
1
( )
Z
O
iZV
⋅+= = signal into Port-1
111
O
iZV
⋅+= = signal into Port-2
222
O
iZV
⋅+= = signal out of Port-1
111
O
iZV
⋅+= = signal out of Port-2
212
O
S
The normalized waves have units of tWat and are
1
12
0
==a
1
a
2
dBS20logFT21=
Isolation:
dBS20logS12(dB)12−=
Input Return Loss:
−=
dBS20logRL
11in
Output Return Loss:
−=
dBS20logRL
22OUT
Insertion Loss:
dBS20logIL21−=
referenced to the system impedance ZO. It is shown by the following mathematical analyses: The relationship between U, P an ZO can be written as:
u
Z
O
a
V
1
+=
Z
O
ZiP
⋅== Substituting:
O
iZ
⋅
O
Z
22
O
P
11
1
+=
2
iZ
⋅
O
1
Z
2
O
Z
0
Z
Z
=
O
O
Rem:
Z
O
Z
ZZ
⋅
U
OO
ZZ
⋅
OO
2
=
O
IUP
=⋅= è RI
R
⋅
=
Z
U
P ⋅==
R
ZZ
OO
Z
=
O
O
⋅
a
1
Because
O
+= è
V
forward
a =
1
, the normalized waves can be determined the measuring the voltage of a
Z
O
forward-traveling wave referenced to the system impedance constant
PPiZP
1111
+=
2222
Pa = (è Unit =
11
Watt = )
Volt
Ohm
Z . Directional couplers or
O
VSWR bridges can divide the standing waves into the forward- and backward-traveling voltage wave. (Diode) Detectors convert these waves to the V
forward
and V
backward
DC voltage. After an easy
processing of both DC voltages, the VSWR can be read.
V
forward
V
backward
50Ω VHF-SWR-Meter built from a kit (Nuova Elettronica). It consists of three strip-lines. The middle line passes the main signal from the input to the output. The upper and lower strip­lines select a part of the forward and backward traveling waves by special electrical and magnetic cross-coupling. Diode detectors at each coupled strip-line-end rectify the power to a DC voltage, which is passed to an external analog circuit for processing and monitoring of the VSWR. Applications: Power antenna match control, PA output power detector, vector voltmeter, vector network analysis, AGC, etc. These kinds of circuit’s kits are published in amateur radio literature and in
several RF magazines.
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Philips Semiconductors
RF Manual
APPENDIX
Product and design manual for RF Products
Input return loss
2-Port Network definition
5th edition
=S
11
portinput from reflectedPower
portinput at generator from availablePower
Output return loss
=S
22
portoutput from reflectedPower
Forward transmission loss (insertion loss)
=S
Figure 11: S-Parameters in the Two-port Network
21
Reverse transmission loss (isolation)
=S
12
Philips’ data sheet parameter Insertion power gain |S21|2:
gainpower Transducer
gainpower r transduceReverse
2
21
log20log10 SdBSdB ⋅=⋅
21
Example: Calculate the insertion power gain for the BGA2003 at 100MHz, 450MHz,
1800MHz, and 2400MHz for the bias set-up V
VS-OUT
=2.5V, I
VS-OUT
=10mA.
Calculation: Download the S-Parameter data file [2_510A3.S2P] from the Philips’ website
page for the Silicon MMIC amplifier BGA2003.
This is a section of the file: # MHz S MA R 50
! Freq S11 S21 S12 S22 : 100 0.58765 -9.43 21.85015 163.96 0.00555 83.961 0.9525 -7.204 400 0.43912 -28.73 16.09626 130.48 0.019843 79.704 0.80026 -22.43 500 0.39966 -32.38 14.27094 123.44 0.023928 79.598 0.75616 -25.24 1800 0.21647 -47.97 4.96451 85.877 0.07832 82.488 0.52249 -46.31 2400 0.18255 -69.08 3.89514 76.801 0.11188 80.224 0.48091 -64
Results: 100MHz è 20⋅log(21.85015) = 26.8 dB
44.12348.130
°°
27094.1409626.16
450MHz è dB
dB 6.23
log20
+
ee
=
2
1800MHz è20⋅log(4.96451) = 13.9 dB 2400MHz è20⋅log(3.89514) = 11.8 dB
portoutput at generator from availablePower
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Philips Semiconductors
RF Manual
APPENDIX
Product and design manual for RF Products
3-Port s
-
parameter definition:
5th edition
3-Port Network definition
Typical vehicles for 3-port s-parameters are: Directional couplers, power splitters, combiners, and phase splitters.
§ Port reflection coefficient / return loss:
b
1
11
22
33
21
31
32
12
31
23
|
a
1
b
2
|
a
2
b
3
|
a
3
b
2
|
=
=
=
=
3
a
1
b
3
|
==a
2
a
1
b
3
|
==a
1
a
2
b
1
|
=
3
a
2
b
1
|
=
2
a
3
b
3
|
==a
1
a
2
Figure 12: Three-port Network's (a) and (b) waves
Port 1 è
Port 2 è
Port 3 è
§ Transmission gain:
Port 1=>2 è
Port 1=>3 è
Port 2=>3 è
Port 2=>1 è
Port 3=>1 è
Port 3=>2 è
S
S
S
S
S
S
S
S
S
0)a ;0(
===a
32
0)a ;0(
===a
31
0)a ;0(
===a
21
0)a(
)0(
)0(
0)a(
0)a(
)0(
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RF Manual Appendix October 2004 34 of 35
Page 35
Philips Semiconductors
RF Manual
APPENDIX
Product and design manual for RF Products
not form part of any quotation or contract, is believed to be accurate and reliable and may
Date of release: October 2004
order number: 4322 252 06394
MAIN FILE RF Manual
In separate file !
5th edition
Download main RF Manual from internet:
http://www.philips.semiconductors.com/markets/mms/products/discretes/documentation/rf_manual
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
4322 252 06394 © Koninklijke Philips Electronics N.V.
RF Manual Appendix October 2004 35 of 35
written consent of the copyright owner. The information presented in this document does be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Document
Published in The Netherlands
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