Philips RF installation Guide
Semiconductors
5thedition
Product and design manual for RF Products
October 2004
Appendix RF Manual
Philips Semiconductors
RF Manual
APPENDIX
Product and design manual for RF Products
5th edition
Koninklijke Philips Electronics N.V. 2004
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
owner. The information presented in this document does not form part of any quotation or contract, is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent - or other industrial or
intellectual property rights.
Date of release: October 2004
4322 252 06394 © Koninklijke Philips Electronics N.V.
RF Manual Appendix October 2004 2 of 35
Philips Semiconductors
RF Manual
APPENDIX
Product and design manual for RF Products
Content appendix:
Application notes:
Appendix A: BGA2715-17 general purpose
wideband amplifier,
50 Ohm Gain Blocks page: 4 - 8
Appendix B: BGA6x89 general purpose
medium power amplifier,
5th edition
50 Ohm Gain Blocks page: 9 -14
Appendix C: Introduction into the
GPS Front -End page: 15 -18
Reference work:
Appendix D: 2.4GHz Generic Front-End
reference design page: 19 - 25
Appendix E: RF Application-basics page: 26 - 29
Appendix F: RF Design-basics page: 30 - 34
4322 252 06394 © Koninklijke Philips Electronics N.V.
RF Manual Appendix October 2004 3 of 35
Philips Semiconductors
RF Manual
APPENDIX
Product and design manual for RF Products
5th edition
Appendix A: BGA2715-17 general purpose
wideband amplifiers, 50 Ohm Gain Blocks
APPLICATION INFORMATION BGA2715-17
Figure 2 shows a typical application circuit for the BGA2715-17 MM IC.
The device is internally matched to 50 O, and therefore does not need any external
matching. The value of the input and output DC blocking capacitors C2 and C3 should
not be more than 100 pF for applications above 100 MHz. However, when the device is
operated below 100 MHz, the capacitor value should be increased.
The 22 nF supply decoupling capacitor C1 should be located as close as possible to
the MMIC.
The PCB top ground plane, connected to the pins 2, 4 and 5 must be as close as
possible to the MMIC, preferably also below the MMIC. When using via holes, use
multiple via holes, as close as possible to the MMIC.
Application examples
Vs
C1
Vs
RF in
RF input
RF out
RF output
C2 C3
GND1
4322 252 06394 © Koninklijke Philips Electronics N.V.
RF Manual Appendix October 2004 4 of 35
GND2
Philips Semiconductors
RF Manual
APPENDIX
Product and design manual for RF Products
5th edition
Mixer
from RF circuit
or demodulator
wideband
amplifier
Oscillator
The MMIC is very suitable as IF amplifier in e.g. LNB's. The exellent wideband
characteristics make it an easy building block.
Mixer
to IF circuit
antenna
LNA
wideband
to IF circuit
or demodulator
amplifier
Oscillator
As second amplifier after an LNA, the MMIC offers an easy matching, low noise
solution.
4322 252 06394 © Koninklijke Philips Electronics N.V.
RF Manual Appendix October 2004 5 of 35
Philips Semiconductors
RF Manual
APPENDIX
Product and design manual for RF Products
2
DESCRIPTION
PARAMETER
5th edition
MMIC wideband amplifier
FEATURES
FEATURES
PIN
• Internally matched to 50 Ohms
• Wide frequency range, 3 dB bandwidth = 3.3 GHz
• Flat 22 dB gain, ± 1 dB up to 2.8 GHz
• -8 dBm output power at 1 dB compression point
• Good linearity for low current, OIP3 = 2 dBm
• Low second harmonic, -30 dBc at P
= - 40 dBm
Drive
• Unconditionally stable, K
APPLICATIONS
• LNB IF amplifiers
• Cable systems
• ISM
• General purpose
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a
6-pin SOT363 plastic SMD package.
PINNING
1
2,5 GND 2
3 RF out
4 GND 1
6 RF in
6 5 4
6 5 4
1 2 3
1 2 3
Top view
Marking code: B6-
Fig.1 Simplified outline (SOT363) and symbol.
V
BGA2715
S
1
6
4
2,5
3
QUICK REFERENCE DATA
SYMBOL CONDITIONS TYP. MAX. UNIT
Vs 5 6 V
Is 4.3 - mA
|S21|
NF f = 1 GHz 2.6 - dB
P
L sat
4322 252 06394 © Koninklijke Philips Electronics N.V.
RF Manual Appendix October 2004 6 of 35
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
f = 1 GHz 22 - dB
f = 1 GHz -4 - dBm
Philips Semiconductors
RF Manual
APPENDIX
Product and design manual for RF Products
2
DESCRIPTION
noise figure
PARAMETER
5th edition
MMIC wideband amplifier
FEATURES PINNING
FEATURES
PIN
• Internally matched to 50 Ohms
• Wide frequency range, 3 dB bandwidth = 3.2 GHz
• Flat 23 dB gain, ± 1 dB up to 2.7 GHz
• 9 dBm output power at 1 dB compression point
• Good linearity for low current, OIP3 = 22 dBm
• Low second harmonic, -38 dBc at P
= - 5 dBm
Load
• Unconditionally stable, K > 1.2
APPLICATIONS
• LNB IF amplifiers
• Cable systems
• ISM
• General purpose
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a
6-pin SOT363 plastic SMD package.
1
2,5 GND 2
3 RF out
4 GND 1
6 RF in
6 5 4
6 5 4
1 2 3
1 2 3
Top view
Marking code: B7-
Fig.1 Simplified outline (SOT363) and symbol.
V
BGA2716
S
1
6
4
2,5
3
QUICK REFERENCE DATA
SYMBOL CONDITIONS TYP. MAX. UNIT
Vs 5 6 V
Is 15.9 - mA
|S21|
NF f = 1 GHz 5.3 - dB
P
L sat
4322 252 06394 © Koninklijke Philips Electronics N.V.
RF Manual Appendix October 2004 7 of 35
DC supply voltage
DC supply current
insertion power gain
saturated load power
f = 1 GHz 22.9 - dB
f = 1 GHz 11.6 - dBm
Philips Semiconductors
RF Manual
APPENDIX
Product and design manual for RF Products
2
DESCRIPTION
PARAMETER
5th edition
MMIC wideband amplifier BGA2717
FEATURES PINNING
FEATURES
PIN
• Internally matched to 50 Ohms
V
• Wide frequency range, 3 dB bandwidth = 3.2 GHz
• Flat 24 dB gain, ± 1 dB up to 2.8 GHz
• -2.5 dBm output power at 1 dB compression point
• Good linearity for low current, OIP3 = 10 dBm
• Low second harmonic, -38 dBc at P
= - 40 dBm
Drive
• Low noise figure, 2.3 dB at 1 GHz.
• Unconditionally stable, K > 1.5
APPLICATIONS
• LNB IF amplifiers
• Cable systems
• ISM
• General purpose
1
S
2,5 GND 2
3 RF out
4 GND 1
6 RF in
6 5 4
6 5 4
1 2 3
1 2 3
Top view
1
6
4
2,5
3
DESCRIPTION
Marking code: 1B-
Silicon Monolitic Microwave Integrated Circuit (MMIC)
Fig.1 Simplified outline (SOT363) and symbol.
wideband amplifier with internal matching circuit in a
6-pin SOT363 plastic SMD package.
QUICK REFERENCE DATA
SYMBOL CONDITIONS TYP. MAX. UNIT
Vs 5 6 V
Is 8.0 - mA
|S21|
NF f = 1 GHz 2.3 - dB
P
L sat
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
f = 1 GHz 24 - dB
f = 1 GHz 1 - dBm
4322 252 06394 © Koninklijke Philips Electronics N.V.
RF Manual Appendix October 2004 8 of 35
Philips Semiconductors
RF Manual
APPENDIX
Product and design manual for RF Products
microstrip
microstrip
5th edition
Appendix B: BGA6x89 general purpose
medium power ampl., 50 Ohm Gain Blocks
Application note for the BGA6289
Application note for the BGA6289.
(See also the objective datasheet BGA6289)
50 Ohm
2
CB CB
2
LC
D
V
13
Rbias
CA CD
50 Ohm
VS
Figure 1 Application circuit.
COMPONENT
Cin C
multilayer ceramic chip
out
DESCRIPTION VALUE DIMENSIONS
68 pF 0603
capacitor
CA Capacitor 1 µF 0603
CB multilayer ceramic chip
1 nF 0603
capacitor
CC multilayer ceramic chip
22 pF 0603
capacitor
L
SMD inductor 22 nH 0603
out
Vsupply Supply voltage 6 V
R
=RB SMD resistor 0.5W 27 Ohm ----
bias
4322 252 06394 © Koninklijke Philips Electronics N.V.
RF Manual Appendix October 2004 9 of 35
Philips Semiconductors
RF Manual
APPENDIX
Product and design manual for RF Products
S22 [dB]
5th edition
Table 1 component values placed on the demo board.
CA is needed for optimal supply decoupling .
Depending on frequency of operation the values of Cin C
and L
out
can be changed
out
(see table 2).
COMPONENT
Frequency (MHz)
500 800 1950 2400 3500
Cin C
220 pF 100 pF 68 pF 56 pF 39 pF
out
CA 1 µF 1 µF 1 µF 1 µF 1 µF
CB 1 nF 1 nF 1 nF 1 nF 1 nF
CC 100 pF 68 pF 22 pF 22 pF 15 pF
L
68 nH 33 nH 22 nH 18 nH 15 nH
out
Table 2 component selection for different frequencies.
V
depends on R
supply
used. Device voltage must be approximately 4 V (i.e. device
bias
current = 80mA).
With formula 1 it is possible to operate the device under different supply voltages.
If the temperature raises the device will draw more current, the voltage drop over Rbias
will increase and the device voltage decrease, this mechanism provides DC stability.
Measured small signal performance.
Small signal performance BGA6289
20.00
15.00
10.00
5.00
0.00
0.00 500.00 1000.00 1500.00 2000.00 2500.00 3000.00
-5.00
-10.00
-15.00
-20.00
-25.00
-30.00
f [MHz]
Figure 2 Small signal performance.
Measured large signal performance.
f 850 MHz 2500 MHz
IP3
31 dBm 25 dBm
out
PL
18 dBm 16 dBm
1dB
NF 3.8 4.1
Table 3 Large signal performance and noise figure.
S11 [dB]
S12 [dB]
S21 [dB]
4322 252 06394 © Koninklijke Philips Electronics N.V.
RF Manual Appendix October 2004 10 of 35
Philips Semiconductors
RF Manual
APPENDIX
Product and design manual for RF Products
Application note for the BGA6489
Application note for the BGA6489.
(See also the objective datasheet BGA6489)
5th edition
50 Ohm
2
CB CB
2
LC
VD
13
Rbias
CA CD
50 Ohm
S
V
Figure 1 Application circuit.
COMPONENT
Cin C
multilayer ceramic chip
out
DESCRIPTION VALUE DIMENSIONS
68 pF 0603
capacitor
CA Capacitor 1 µF 0603
CB multilayer ceramic chip
1 nF 0603
capacitor
CC multilayer ceramic chip
22 pF 0603
capacitor
L
SMD inductor 22 nH 0603
out
Vsupply Supply voltage 8 V
R
=RB SMD resistor 0.5W 33 Ohm ----
bias
Table 1 component values placed on the demo board.
4322 252 06394 © Koninklijke Philips Electronics N.V.
RF Manual Appendix October 2004 11 of 35
Loading...