Philips PZM10NB1, PZM10NB2, PZM12NB1, PZM12NB2, PZM15NB2 Datasheet
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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D114
PZM-N series
Voltage regulator diodes
Product specification
Supersedes data of 1997 Dec 15
1999 Jan 28
Philips Semiconductors Product specification
Voltage regulator diodes PZM-N series
FEATURES
• Total power dissipation:
max. 300 mW
• Small plastic package suitable for
surface mounted design
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
• Wide working voltage range:
nom. 2.4 to 75 V (E24 range).
handbook, halfpage
APPLICATIONS
• General regulation functions.
3
2
n.c.
1
DESCRIPTION
Low power general purpose voltage
regulator diode in a SOT346 (SC59)
plastic package, suitable for surface
Top view
21
MAM378
3
mounted design.
Fig.1 Simplified outline (SOT346; SC59) and symbol.
MARKING
TYPE
NUMBER
MARKING CODE
B B1 B2 B3 B B1 B2 B3
TYPE
NUMBER
MARKING CODE
PZM2.4N 2V4 −−−PZM15N 15V 151 152 153
PZM2.7N 2V7 271 272 − PZM16N 16V 161 162 163
PZM3.0N 3V0 301 302 − PZM18N 18V 181 182 183
PZM3.3N 3V3 331 332 − PZM20N 20V 201 202 203
PZM3.6N 3V6 361 362 − PZM22N 22V 221 222 223
PZM3.9N 3V9 391 392 − PZM24N 24V 241 242 243
PZM4.3N 4V3 431 432 433 PZM27N 27V −−−
PZM4.7N 4V7 471 472 473 PZM30N 30V −−−
PZM5.1N 5V1 511 512 513 PZM33N 33V −−−
PZM5.6N 5V6 561 562 563 PZM36N 36V −−−
PZM6.2N 6V2 621 622 623 PZM39N 39V −−−
PZM6.8N 6V8 681 682 683 PZM43N 43V −−−
PZM7.5N 7V5 751 752 753 PZM47N 47V −−−
PZM8.2N 8V2 821 822 823 PZM51N 51V −−−
PZM9.1N 9V1 911 912 913 PZM56N 56V −−−
PZM10N 10V 101 102 103 PZM62N 62V −−−
PZM11N 11V 111 112 113 PZM68N 68V −−−
PZM12N 12V 121 122 123 PZM75N 75V −−−
PZM13N 13V 131 132 133 − −−−−
1999 Jan 28 2
Philips Semiconductors Product specification
Voltage regulator diodes PZM-N series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
continuous forward current − 250 mA
non-repetitive peak current tp= 100 µs; square wave;
T
=25°C prior to surge
amb
total power dissipation T
=25°C − 300 mW
amb
see Tables 1 and 2
storage temperature −65 +150 °C
operating junction temperature − 150 °C
thermal resistance from junction to soldering point Ts=60°C 300 K/W
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
forward voltage IF= 10 mA; see Fig.2 0.9 V
I
= 100 mA; see Fig.2 1.1 V
F
reverse current
PZM2.4N V
PZM2.7N V
PZM3.0N V
PZM3.3N V
PZM3.6N V
PZM3.9N V
PZM4.3N V
PZM4.7N V
PZM5.1N V
PZM5.6N V
PZM6.2N V
PZM6.8N V
PZM7.5N V
PZM8.2N V
PZM9.1N V
PZM10N V
PZM11N V
PZM12N V
PZM13N V
PZM15N V
PZM16N V
=1V 50 µA
R
=1V 20 µA
R
=1V 10 µA
R
=1V 5 µA
R
=1V 5 µA
R
=1V 3 µA
R
=1V 3 µA
R
=1V 3 µA
R
= 1.5 V 3 µA
R
= 2.5 V 2 µA
R
= 3.0 V 2 µA
R
= 3.5 V 2 µA
R
= 4.0 V 1 µA
R
= 5.0 V 700 nA
R
= 6.0 V 500 nA
R
= 7.0 V 200 nA
R
= 8.0 V 100 nA
R
= 9.0 V 100 nA
R
= 10.0 V 100 nA
R
= 11.0 V 70 nA
R
= 12.0 V 70 nA
R
1999 Jan 28 3
Philips Semiconductors Product specification
Voltage regulator diodes PZM-N series
SYMBOL PARAMETER CONDITIONS MAX. UNIT
I
R
reverse current
PZM18N V
PZM20N V
PZM22N V
PZM24N V
PZM27N V
PZM30N V
PZM33N V
PZM36N V
PZM39N V
PZM43N V
PZM47N V
PZM51N V
PZM56N V
PZM62N V
PZM68N V
PZM75N V
= 13.0 V 70 nA
R
= 15.0 V 70 nA
R
= 17.0 V 70 nA
R
= 19.0 V 70 nA
R
= 21.0 V 70 nA
R
= 23.0 V 70 nA
R
= 25.0 V 70 nA
R
= 27.0 V 70 nA
R
= 0.7 V
R
= 0.7 V
R
= 0.7 V
R
= 0.7 V
R
= 0.7 V
R
= 0.7 V
R
= 0.7 V
R
= 0.7 V
R
Znom
Znom
Znom
Znom
Znom
Znom
Znom
Znom
50 nA
50 nA
50 nA
50 nA
50 nA
50 nA
50 nA
50 nA
1999 Jan 28 4
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