Datasheet PUMH10 Datasheet (Philips)

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DISCRETE SEMICONDUCTORS

DATA SH EET

PEMH10; PUMH10

NPN/NPN resistor-equipped
transistors; R1 = 2.2 kΩ,R2=47kΩ

Product specification
Supersedes data of 2001 Oct 22

2003 Oct 20

Philips Semiconductors Product specification

NPN/NPN resistor-equipped transistors;

PEMH10; PUMH10

R1 = 2.2 kΩ, R2 = 47 kΩ

FEATURES

• Built-in bias resistors

• Simplified circuit design

• Reduction of component count

• Reduced pick and place costs.

APPLICATIONS

• Low current peripheral driver

• Replacement of general purpose transistors in digital

applications

• Control of IC inputs.

PRODUCT OVERVIEW

TYPE

NUMBER

PHILIPS EIAJ

PACKAGE

MARKING CODE

PEMH10 SOT666 10 PEMB10 PEMD10
PUMH10 SOT363 SC-88 H*0

QUICK REFERENCE DATA

SYMBOL PARAMETER TYP. MAX. UNIT

V

CEO

collector-emitter

− 50 V

voltage

I

O

output current (DC) − 100 mA
TR1 NPN −−−
TR2 NPN −−−
R1 bias resistor 2.2 − kΩ
R2 bias resistor 47 − kΩ

DESCRIPTION

NPN/NPN resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).

PNP/PNP

(1)

COMPLEMENT

PUMB10 PUMD10

COMPLEMENT

NPN/PNP

Note

1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.

SIMPLIFIED OUTLINE, SYMBOL AND PINNING

PINNING

TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL

PIN DESCRIPTION

PEMH10 1 emitter TR1
PUMH10 2 base TR1

handbook, halfpage

123

Top view

465

MHC650

654

R1 R2

TR1

R2

123

TR2

R1

3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1

2003 Oct 20 2

Philips Semiconductors Product specification

NPN/NPN resistor-equipped transistors;

PEMH10; PUMH10

R1 = 2.2 kΩ, R2 = 47 kΩ

ORDERING INFORMATION

TYPE NUMBER

NAME DESCRIPTION VERSION

PEMH10 − plastic surface mounted package; 6 leads SOT666
PUMH10 − plastic surface mounted package; 6 leads SOT363

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor

V
V
V
V

CBO
CEO
EBO
I

collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage

positive − +12 V
negative −−5V

I

O

I

CM

P

tot

output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T

amb

≤ 25 °C
SOT363 note 1 − 200 mW
SOT666 notes 1 and 2 − 200 mW

T
T
T

stg
j
amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Per device

P

tot

total power dissipation T

amb

≤ 25 °C
SOT363 note 1 − 300 mW
SOT666 notes 1 and 2 − 300 mW

PACKAGE

Notes

1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.

2. Reflow soldering is the only recommended soldering method.

2003 Oct 20 3

Philips Semiconductors Product specification

NPN/NPN resistor-equipped transistors;

PEMH10; PUMH10

R1 = 2.2 kΩ, R2 = 47 kΩ

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Per transistor

R

th j-a

thermal resistance from junction to ambient T

SOT363 note 1 625 K/W
SOT666 notes 1 and 2 625 K/W

Per device

R

th j-a

thermal resistance from junction to ambient T

SOT363 note 1 416 K/W
SOT666 notes 1 and 2 416 K/W

Notes

1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.

2. Reflow soldering is the only recommended soldering method.

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

amb

amb

≤ 25 °C

≤ 25 °C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor

I

CBO

I

CEO

I

EBO

h

FE

V

CEsat

V

i(off)

V

i(on)

collector-base cut-off current VCB=50V; IE=0 −−100 nA
collector-emitter cut-off current VCE=30V; IB=0 −−1µA

V

=30V; IB= 0; Tj= 150 °C −−50 µA

CE

emitter-base cut-off current VEB=5V; IC=0 −−180 µA
DC current gain VCE=5V; IC= 10 mA 100 −−
collector-emitter saturation voltage IC= 5 mA; IB= 0.25 mA −−100 mV
input-off voltage IC= 100 µA; VCE=5V − 0.6 0.5 V
input-on voltage IC= 5 mA; VCE= 0.3 V 1.1 0.75 − V

R1 input resistor 1.54 2.2 2.86 kΩ

R2

------- ­R1

C

c

resistor ratio 17 21 26
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz −−2.5 pF

2003 Oct 20 4

Philips Semiconductors Product specification

NPN/NPN resistor-equipped transistors;

PEMH10; PUMH10

R1 = 2.2 kΩ, R2 = 47 kΩ

PACKAGE OUTLINES

Plastic surface mounted package; 6 leads SOT666

D

S

YS

A

E

H

E

X

pin 1 index

123

e

DIMENSIONS (mm are the original dimensions)

UNIT b

mm

A

0.6

0.5

0.27

0.17

p

cD

0.18

0.08

1

1.7

1.5

b

p

e

E

1.3

1.1

456

A

wM

A

0 1 2 mm

scale

e

H

L

1.0

e

1

E

1.7

0.5

1.5

0.3

0.1

p

w

0.1y0.1

detail X

c

L

p

OUTLINE
VERSION

SOT666

IEC JEDEC EIAJ

REFERENCES

2003 Oct 20 5

EUROPEAN

PROJECTION

ISSUE DATE

01-01-04
01-08-27

Philips Semiconductors Product specification

NPN/NPN resistor-equipped transistors;

PEMH10; PUMH10

R1 = 2.2 kΩ, R2 = 47 kΩ

Plastic surface mounted package; 6 leads SOT363

D

y

56

4

E

H

E

AB

X

v M

A

pin 1
index

132

e

1

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

A

1.1

0.8

max

0.1

1

b

p

0.30

0.25

0.20

0.10

b

p

e

cD

2.2

1.8

A

wBM

0 1 2 mm

scale

E

1.35

1.15

e

1.3

e

1

0.65

H

E

2.2

2.0

0.45

0.15

A

1

detail X

L

Qywv

p

0.25

0.15

Q

c

L

p

0.2 0.10.2

OUTLINE
VERSION

SOT363 SC-88

IEC JEDEC EIAJ

REFERENCES

2003 Oct 20 6

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

NPN/NPN resistor-equipped transistors;

PEMH10; PUMH10

R1 = 2.2 kΩ, R2 = 47 kΩ

DATA SHEET STATUS

LEVEL

I Objective data Development This data sheet contains data from the objective specification for product

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

III Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For datasheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

DEFINITION

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or atanyother conditions above thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warranty that suchapplicationswillbe
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expectedto result in personal injury.Philips
Semiconductorscustomersusing or selling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the productis infull production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Oct 20 7

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R75/02/pp8 Date of release: 2003 Oct 20 Document order number: 9397 750 11874

SCA75