Philips PUMH10 Technical data
查询PEMH10供应商
DISCRETE SEMICONDUCTORS
DATA SH EET
PEMH10; PUMH10
NPN/NPN resistor-equipped
transistors; R1 = 2.2 kΩ,R2=47kΩ
Product specification
Supersedes data of 2001 Oct 22
2003 Oct 20
Philips Semiconductors Product specification
NPN/NPN resistor-equipped transistors;
PEMH10; PUMH10
R1 = 2.2 kΩ, R2 = 47 kΩ
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• Low current peripheral driver
• Replacement of general purpose transistors in digital
applications
• Control of IC inputs.
PRODUCT OVERVIEW
TYPE
NUMBER
PHILIPS EIAJ
PACKAGE
MARKING CODE
PEMH10 SOT666 10 PEMB10 PEMD10
PUMH10 SOT363 SC-88 H*0
QUICK REFERENCE DATA
SYMBOL PARAMETER TYP. MAX. UNIT
V
CEO
collector-emitter
− 50 V
voltage
I
O
output current (DC) − 100 mA
TR1 NPN −−−
TR2 NPN −−−
R1 bias resistor 2.2 − kΩ
R2 bias resistor 47 − kΩ
DESCRIPTION
NPN/NPN resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PNP/PNP
(1)
COMPLEMENT
PUMB10 PUMD10
COMPLEMENT
NPN/PNP
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL
PIN DESCRIPTION
PEMH10 1 emitter TR1
PUMH10 2 base TR1
handbook, halfpage
123
Top view
465
MHC650
654
R1 R2
TR1
R2
123
TR2
R1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
2003 Oct 20 2
Philips Semiconductors Product specification
NPN/NPN resistor-equipped transistors;
PEMH10; PUMH10
R1 = 2.2 kΩ, R2 = 47 kΩ
ORDERING INFORMATION
TYPE NUMBER
NAME DESCRIPTION VERSION
PEMH10 − plastic surface mounted package; 6 leads SOT666
PUMH10 − plastic surface mounted package; 6 leads SOT363
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
V
V
V
CBO
CEO
EBO
I
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage
positive − +12 V
negative −−5V
I
O
I
CM
P
tot
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T
amb
≤ 25 °C
SOT363 note 1 − 200 mW
SOT666 notes 1 and 2 − 200 mW
T
T
T
stg
j
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
SOT363 note 1 − 300 mW
SOT666 notes 1 and 2 − 300 mW
PACKAGE
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
2003 Oct 20 3
Loading...