Philips PUMD3 User Guide

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PEMD3; PIMD3; PUMD3

NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ

Rev. 09 — 18 May 2005 Product data sheet

1. Product profile

1.1 General description

NPN/PNP Resistor-Equipped Transistors (RET).

Table 1: Product overview

Type number Package PNP/PNP

PEMD3 SOT666 - PEMB11 PEMH11
PIMD3 SOT457 SC-74 - ­PUMD3 SOT363 SC-88 PUMB11 PUMH11

Philips JEITA

complement

NPN/NPN
complement

1.2 Features

■ Built-in bias resistors

■ Simplifies circuit design

■ Reduces component count

■ Reduces pick and place costs

1.3 Applications

■ Low current peripheral driver

■ Control of IC inputs

■ Replaces general-purpose transistors in digital applications

1.4 Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

CEO

I

O

R1 bias resistor 1 (input) 7 10 13 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2

collector-emitter voltage open base - - 50 V
output current (DC) - - 100 mA

Philips Semiconductors

2. Pinning information

Table 3: Pinning

Pin Description Simplified outline Symbol

1 GND (emitter) TR1
2 input (base) TR1
3 output (collector) TR2
4 GND (emitter) TR2
5 input (base) TR2
6 output (collector) TR1

PEMD3; PIMD3; PUMD3

NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

6 45

1 32

001aab555

65 4

R2

R1

TR1

R2 R1

TR2

3. Ordering information

Table 4: Ordering information

Type number Package

PEMD3 - plastic surface mounted package; 6 leads SOT666
PIMD3 SC-74 plastic surface mounted package; 6 leads SOT457
PUMD3 SC-88 plastic surface mounted package; 6 leads SOT363

4. Marking

Table 5: Marking codes

Type number Marking code

PEMD3 D3
PIMD3 M7
PUMD3 D*3

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

1

23

006aaa143

Name Description Version

[1]

9397 750 14517 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 09 — 18 May 2005 2 of 11

Philips Semiconductors

5. Limiting values

Table 6: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor; for the PNP transistor with negative polarity

V

CBO

V

CEO

V

EBO

V

I

I

O

I

CM

P

tot

T

stg

T

j

T

amb

Per device

P

tot

PEMD3; PIMD3; PUMD3

NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

collector-base voltage open emitter - 50 V
collector-emitter voltage open base - 50 V
emitter-base voltage open collector - 10 V
input voltage TR1

positive - +40 V
negative - −10 V

input voltage TR2

positive - +10 V

negative - −40 V
output current (DC) - 100 mA
peak collector current - 100 mA
total power dissipation T

SOT363

SOT457

SOT666
storage temperature −65 +150 °C
junction temperature - 150 °C
ambient temperature −65 +150 °C

total power dissipation T

SOT363

SOT457

SOT666

amb

amb

≤ 25 °C

≤ 25 °C

[1]

- 200 mW

[2]

- 300 mW

[1] [3]

- 200 mW

[1]

- 300 mW

[2]

- 600 mW

[1] [3]

- 300 mW

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.
[2] Device mounted on an FR4 PCB with 65 µm copper strip line, standard footprint.
[3] Reflow soldering is the only recommended soldering method.

9397 750 14517 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 09 — 18 May 2005 3 of 11

Philips Semiconductors

6. Thermal characteristics

Table 7: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

R

th(j-a)

Per device

R

th(j-a)

thermal resistance from
junction to ambient

SOT363
SOT457
SOT666

thermal resistance from
junction to ambient

SOT363
SOT457
SOT666

PEMD3; PIMD3; PUMD3

NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

in free air

[1]

- - 625 K/W

[2]

- - 417 K/W

[1] [3]

- - 625 K/W

in free air

[1]

- - 416 K/W

[2]

- - 208 K/W

[1] [3]

- - 416 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 65 µm copper strip line, standard footprint.
[3] Reflow soldering is the only recommended soldering method.

7. Characteristics

Table 8: Characteristics

T

= 25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

Per transistor; for the PNP transistor with negative polarity

I

CBO

I

CEO

I

EBO

h

FE

V

CEsat

V

I(off)

V

I(on)

R1 bias resistor 1 (input) 7 10 13 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
C

c

collector-base cut-off

VCB=50V; IE= 0 A - - 100 nA

current
collector-emitter

cut-off current

emitter-base cut-off

VCE=30V; IB=0A - - 1 µA

=30V; IB=0A;

V

CE

T

= 150 °C

j

--50µA

VEB=5V; IC= 0 A - - 400 µA

current
DC current gain VCE=5V; IC= 5 mA 30 - ­collector-emitter

IC= 10 mA; IB= 0.5 mA - - 150 mV

saturation voltage
off-state input voltage VCE=5V; IC= 100 µA - 1.1 0.8 V
on-state input voltage VCE= 0.3 V; IC= 10 mA 2.5 1.8 - V

collector capacitance VCB=10V; IE=ie=0A;

---

f=1MHz
TR1 (NPN) - - 2.5 pF
TR2 (PNP) - - 3 pF

9397 750 14517 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 09 — 18 May 2005 4 of 11

Philips Semiconductors

PEMD3; PIMD3; PUMD3

NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

3

10

h

FE

2

10

10

1

−1

10

006aaa034

(1)
(2)
(3)

2

101

IC (mA)

10

VCE=5V
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −40 °C

Fig 1. TR1 (NPN): DC current gain as a function of

collector current; typical values

1

V

CEsat

(V)

(1)

−1

10

−2

10

110

(2)
(3)

10

006aaa035

IC (mA)

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −40 °C

Fig 2. TR1 (NPN): Collector-emitter voltage as a

function of collector current; typical values

2

10

V

I(on)

(V)

(1)
(2)

1

−1

10

−1

10

(3)

006aaa036

2

101

IC (mA)

10

VCE= 0.3 V
(1) T
(2) T
(3) T

amb
amb
amb

= −40 °C
=25°C
= 100 °C

Fig 3. TR1(NPN): On-state input voltage as a function

of collector current; typical values

10

V

I(off)

(V)

(1)
(2)

1

(3)

−1

10

−2

10

−1

006aaa037

IC (mA)

10110

VCE=5V
(1) T
(2) T
(3) T

amb
amb
amb

= −40 °C
=25°C
= 100 °C

Fig 4. TR1(NPN): Off-state input voltage as a function

of collector current; typical values

9397 750 14517 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 09 — 18 May 2005 5 of 11

Philips Semiconductors

PEMD3; PIMD3; PUMD3

NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

h

−10

FE

−10

−10

−1

−10

3

2

−1

−10−1

(1)

(3)

006aaa046

(2)

IC (mA)

−10

2

VCE= −5V
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −40 °C

Fig 5. TR2 (PNP): DC current gain as a function of

collector current; typical values

−1

V

CEsat

(V)

−1

−10

−2

−10

−1 −10

(1)

(3)

−10

006aaa047

(2)

IC (mA)

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −40 °C

Fig 6. TR2 (PNP): Collector-emitter voltage as a

function of collector current; typical values

2

006aaa048

IC (mA)

−10

2

V

−10

I(on)

(V)

−10

−10

−1

2

−1

−10

(2)

(1)

(3)

−1

−10−1

VCE= −0.3 V
(1) T
(2) T
(3) T

amb
amb
amb

= −40 °C
=25°C
= 100 °C

Fig 7. TR2(PNP): On-state input voltage as a function

of collector current; typical values

006aaa049

IC (mA)

−10−1−10

V

I(off)

(V)

−10

−10

−1

−1

−10

(1)

(2)
(3)

−2

−1

VCE= −5V
(1) T
(2) T
(3) T

amb
amb
amb

= −40 °C
=25°C
= 100 °C

Fig 8. TR2(PNP): Off-state input voltage as a function

of collector current; typical values

9397 750 14517 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 09 — 18 May 2005 6 of 11

Philips Semiconductors

8. Package outline

PEMD3; PIMD3; PUMD3

NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

2.2

2.0

1.35

1.15

2.2

1.8

pin 1
index

132

0.65

1.3

0.45

465

0.15

0.3

0.2

1.1

0.8

0.25

0.10

3.1

2.7

56

3.0

1.7

2.5

1.3

04-11-08Dimensions in mm

pin 1 index

132

0.95

1.9

4

0.40

0.25

Fig 9. Package outline SOT363 (SC-88) Fig 10. Package outline SOT457 (SC-74)

1.7

1.5

1.3

1.1
pin 1 index

1.7

1.5

456

0.3

0.1

0.6

0.5

0.6

0.2

1.1

0.9

0.26

0.10

04-11-08Dimensions in mm

Fig 11. Package outline SOT666

Dimensions in mm

123

0.5
1

0.27

0.17

0.18

0.08

04-11-08

9397 750 14517 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 09 — 18 May 2005 7 of 11

Philips Semiconductors

9. Packing information

PEMD3; PIMD3; PUMD3

NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

Table 9: Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PEMD3 SOT666 2 mm pitch, 8 mm tape and reel - - -315 -

4 mm pitch, 8 mm tape and reel - -115 - -

PIMD3 SOT457 4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

PUMD3 SOT363 4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

[1] For further information and the availability of packing methods, seeSection 15.
[2] T1: normal taping
[3] T2: reverse taping

[1]

3000 4000 8000 10000

[2]

-115 - - -135

[3]

-125 - - -165

[2]

-115 - - -135

[3]

-125 - - -165

9397 750 14517 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 09 — 18 May 2005 8 of 11

Philips Semiconductors

NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

PEMD3; PIMD3; PUMD3

10. Revision history

Table 10: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

PEMD3_PIMD3_
PUMD3_9

Modifications:

PEMD3_PIMD3_
PUMD3_8

20050518 Product data sheet - 9397 750 14517 PEMD3_PIMD3_

PUMD3_8

• Table 1: EIAJ amended to JEITA

• Table 9: Packing method (2 mm pitch) for SOT666 added

• Section 14: added

20041206 Product data sheet - 9397 750 13294 PEMD3_PUMD3_7

9397 750 14517 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 09 — 18 May 2005 9 of 11

Philips Semiconductors

11. Data sheet status

PEMD3; PIMD3; PUMD3

NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

Level Data sheet status

I Objective data Development This data sheet contains data from the objective specification for product development. Philips

II Preliminary data Qualification This data sheet contains datafrom thepreliminary specification. Supplementary datawill bepublished

III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

12. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.

[2] [3]

Definition

Semiconductors reserves the right to change the specification in any manner without notice.

at a later date. Philips Semiconductors reservesthe right to change the specification without notice,in
order to improve the design and supply the best possible product.

right to make changes at anytime in order to improve the design, manufacturingand supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).

customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, ormask workright infringement, unless otherwise
specified.

14. Trademarks

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors

Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.

15. Contact information

For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [e-mail]

9397 750 14517 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 09 — 18 May 2005 10 of 11

Philips Semiconductors

NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

16. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 8

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 10

12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

15 Contact information . . . . . . . . . . . . . . . . . . . . 10

PEMD3; PIMD3; PUMD3

© Koninklijke Philips Electronics N.V. 2005

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 18 May 2005

Document number: 9397 750 14517