Philips PUMD3 User Guide
查询PEMD3供应商
PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
Rev. 09 — 18 May 2005 Product data sheet
1. Product profile
1.1 General description
NPN/PNP Resistor-Equipped Transistors (RET).
Table 1: Product overview
Type number Package PNP/PNP
PEMD3 SOT666 - PEMB11 PEMH11
PIMD3 SOT457 SC-74 - PUMD3 SOT363 SC-88 PUMB11 PUMH11
Philips JEITA
complement
NPN/NPN
complement
1.2 Features
■ Built-in bias resistors
■ Simplifies circuit design
■ Reduces component count
■ Reduces pick and place costs
1.3 Applications
■ Low current peripheral driver
■ Control of IC inputs
■ Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
I
O
R1 bias resistor 1 (input) 7 10 13 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
collector-emitter voltage open base - - 50 V
output current (DC) - - 100 mA
Philips Semiconductors
2. Pinning information
Table 3: Pinning
Pin Description Simplified outline Symbol
1 GND (emitter) TR1
2 input (base) TR1
3 output (collector) TR2
4 GND (emitter) TR2
5 input (base) TR2
6 output (collector) TR1
PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
6 45
1 32
001aab555
65 4
R2
R1
TR1
R2 R1
TR2
3. Ordering information
Table 4: Ordering information
Type number Package
PEMD3 - plastic surface mounted package; 6 leads SOT666
PIMD3 SC-74 plastic surface mounted package; 6 leads SOT457
PUMD3 SC-88 plastic surface mounted package; 6 leads SOT363
4. Marking
Table 5: Marking codes
Type number Marking code
PEMD3 D3
PIMD3 M7
PUMD3 D*3
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
1
23
006aaa143
Name Description Version
[1]
9397 750 14517 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 09 — 18 May 2005 2 of 11
Philips Semiconductors
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
V
I
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
collector-base voltage open emitter - 50 V
collector-emitter voltage open base - 50 V
emitter-base voltage open collector - 10 V
input voltage TR1
positive - +40 V
negative - −10 V
input voltage TR2
positive - +10 V
negative - −40 V
output current (DC) - 100 mA
peak collector current - 100 mA
total power dissipation T
SOT363
SOT457
SOT666
storage temperature −65 +150 °C
junction temperature - 150 °C
ambient temperature −65 +150 °C
total power dissipation T
SOT363
SOT457
SOT666
amb
amb
≤ 25 °C
≤ 25 °C
[1]
- 200 mW
[2]
- 300 mW
[1] [3]
- 200 mW
[1]
- 300 mW
[2]
- 600 mW
[1] [3]
- 300 mW
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB with 65 µm copper strip line, standard footprint.
[3] Reflow soldering is the only recommended soldering method.
9397 750 14517 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 09 — 18 May 2005 3 of 11
Philips Semiconductors
6. Thermal characteristics
Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
Per device
R
th(j-a)
thermal resistance from
junction to ambient
SOT363
SOT457
SOT666
thermal resistance from
junction to ambient
SOT363
SOT457
SOT666
PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
in free air
[1]
- - 625 K/W
[2]
- - 417 K/W
[1] [3]
- - 625 K/W
in free air
[1]
- - 416 K/W
[2]
- - 208 K/W
[1] [3]
- - 416 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 65 µm copper strip line, standard footprint.
[3] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8: Characteristics
T
= 25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1 bias resistor 1 (input) 7 10 13 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
C
c
collector-base cut-off
VCB=50V; IE= 0 A - - 100 nA
current
collector-emitter
cut-off current
emitter-base cut-off
VCE=30V; IB=0A - - 1 µA
=30V; IB=0A;
V
CE
T
= 150 °C
j
--50µA
VEB=5V; IC= 0 A - - 400 µA
current
DC current gain VCE=5V; IC= 5 mA 30 - collector-emitter
IC= 10 mA; IB= 0.5 mA - - 150 mV
saturation voltage
off-state input voltage VCE=5V; IC= 100 µA - 1.1 0.8 V
on-state input voltage VCE= 0.3 V; IC= 10 mA 2.5 1.8 - V
collector capacitance VCB=10V; IE=ie=0A;
---
f=1MHz
TR1 (NPN) - - 2.5 pF
TR2 (PNP) - - 3 pF
9397 750 14517 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 09 — 18 May 2005 4 of 11
Loading...