Philips PUMD17 Technical data
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PEMD17; PUMD17
NPN/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
Rev. 03 — 24 January 2005 Product data sheet
1. Product profile
1.1 General description
NPN/PNP resistor-equipped transistors.
Table 1: Product overview
Type number Package PNP/PNP
PEMD17 SOT666 - PEMB17 PEMH17
PUMD17 SOT363 SC-88 PUMB17 PUMH17
Philips JEITA
complement
NPN/NPN
complement
1.2 Features
■ Built-in bias resistors
■ Simplifies circuit design
■ Reduces component count
■ Reduces pick and place cost
1.3 Applications
■ Low current peripheral driver
■ Control of IC inputs
■ Replacement of general-purpose transistors in digital applications
1.4 Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
I
O
R1 bias resistor 1 (input) 33 47 61 kΩ
R2/R1 bias resistor ratio 0.37 0.47 0.57
collector-emitter voltage open base - - 50 V
output current (DC) - - 100 mA
Philips Semiconductors
2. Pinning information
Table 3: Pinning
Pin Description Simplified outline Symbol
1 GND (emitter) TR1
2 input (base) TR1
3 output (collector) TR2
4 GND (emitter) TR2
5 input (base) TR2
6 output (collector) TR1
PEMD17; PUMD17
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
6 45
1 32
001aab555
65 4
R2
R1
TR1
R2 R1
TR2
3. Ordering information
Table 4: Ordering information
Type number Package
PEMD17 - plastic surface mounted package; 6 leads SOT666
PUMD17 SC-88 plastic surface mounted package; 6 leads SOT363
4. Marking
Table 5: Marking codes
Type number Marking code
PEMD17 5N
PUMD17 D9*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
1
23
006aaa143
Name Description Version
[1]
9397 750 14367 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 24 January 2005 2 of 12
Philips Semiconductors
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
V
I
V
I
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
PEMD17; PUMD17
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
collector-base voltage open emitter - 50 V
collector-emitter voltage open base - 50 V
emitter-base voltage open collector - 10 V
input voltage TR1
positive - +40 V
negative - −10 V
input voltage TR2
positive - +10 V
negative - −40 V
output current (DC) - 100 mA
peak collector current - 100 mA
total power dissipation T
SOT363
SOT666
storage temperature −65 +150 °C
junction temperature - 150 °C
ambient temperature −65 +150 °C
total power dissipation T
SOT363
SOT666
amb
amb
≤ 25 °C
≤ 25 °C
[1]
- 200 mW
[1] [2]
- 200 mW
[1]
- 300 mW
[1] [2]
- 300 mW
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.
[2] Reflow soldering is the only recommended soldering method.
9397 750 14367 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 24 January 2005 3 of 12
Philips Semiconductors
6. Thermal characteristics
Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
Per device
R
th(j-a)
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.
[2] Reflow soldering is the only recommended soldering method.
thermal resistance from
junction to ambient
SOT363
SOT666
thermal resistance from
junction to ambient
SOT363
SOT666
PEMD17; PUMD17
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
T
≤ 25 °C
amb
[1]
- - 625 K/W
[1] [2]
- - 625 K/W
T
≤ 25 °C
amb
[1]
- - 416 K/W
[1] [2]
- - 416 K/W
7. Characteristics
Table 8: Characteristics
T
= 25 °C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
I
CBO
collector-base cut-off
current
I
CEO
collector-emitter
cut-off current
I
EBO
emitter-base cut-off
current
h
V
FE
CEsat
DC current gain VCE = 5 V; IC = 5 mA 60 - -
collector-emitter
saturation voltage
V
I(off)
V
I(on)
off-state input voltage VCE = 5 V; IC = 100 µA - 1.7 1.2 V
on-state input voltage VCE = 0.3 V; IC = 2 mA 4 2.7 - V
R1 bias resistor 1 (input) 33 47 61 kΩ
R2/R1 bias resistor ratio 0.37 0.47 0.57
C
c
collector capacitance VCB = −10 V; IE = ie = 0 A;
TR1 (NPN) - - 2.5 pF
TR2 (PNP) - - 3 pF
VCB = 50 V; IE = 0 A - - 100 nA
VCE = 30 V; IB = 0 A - - 1 µA
= 30 V; IB = 0 A;
V
CE
T
= 150 °C
j
--50µA
VEB = 5 V; IC = 0 A - - 110 µA
IC = 10 mA; IB = 0.5 mA - - 150 mV
f=1MHz
9397 750 14367 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 24 January 2005 4 of 12
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