Philips PUMD16 User Guide
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PUMD16
NPN/PNP resistor-equipped
transistors; R1 = 22 kΩ,R2=47kΩ
Product specification 2003 Oct 22
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 47 kΩ
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• Low current peripheral driver
• Replacement of general purpose transistors in digital
applications
• Control of IC inputs.
DESCRIPTION
NPN/PNP resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PUMD16
QUICK REFERENCE DATA
SYMBOL PARAMETER TYP. MAX. UNIT
V
CEO
collector-emitter
voltage
I
O
output current (DC) − 100 mA
TR1 NPN −−−
TR2 PNP −−−
R1 bias resistor 22 − kΩ
R2 bias resistor 47 − kΩ
− 50 V
PRODUCT OVERVIEW
TYPE
NUMBER
PHILIPS EIAJ
PUMD16 SOT363 SC-88 D1*
PACKAGE
MARKING CODE
(1)
PNP/PNP
COMPLEMENT
NPN/NPN
COMPLEMENT
PUMB16 PUMH16
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL
PIN DESCRIPTION
PUMD16 1 emitter TR1
5
46
123
Top view
654
R1 R2
TR1
R2
123
TR2
R1
MAM468
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
2003 Oct 22 2
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistors;
PUMD16
R1 = 22 kΩ, R2 = 47 kΩ
ORDERING INFORMATION
TYPE NUMBER
NAME DESCRIPTION VERSION
PUMD16 − plastic surface mounted package; 6 leads SOT363
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 6V
input voltage TR1
positive − +40 V
negative −−7V
V
I
input voltage TR2
positive − +7 V
negative −−40 V
I
I
P
T
T
T
O
CM
tot
stg
j
amb
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
PACKAGE
Note
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per transistor
R
th j-a
thermal resistance from junction to ambient T
≤ 25 °C; note 1 625 K/W
amb
Per device
R
th j-a
thermal resistance from junction to ambient T
≤ 25 °C; note 1 416 K/W
amb
Note
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2003 Oct 22 3
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