Philips PUMD12 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
MBD128
PUMD12
NPN/PNP resistor-equipped
transistor
Product specification
1999 Apr 26
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistor PUMD12
FEATURES
• Transistors with different polarity
and built-in bias resistors
R1 and R2 (typ. 47 kΩ each)
• No mutual interference between
the transistors
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
DESCRIPTION
NPN/PNP resistor-equipped
transistors in an SC-88 plastic
package.
handbook, halfpage
56
132
Top view
Fig.1 Simplified outline (SC-88) and symbol.
2, 5
1, 4
MBK120
6, 3
Fig.2 Equivalent inverter
symbol.
4
MAM343
654
R1 R2
TR1
R2
123
TR2
R1
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
MARKING
TYPE
NUMBER
MARKING CODE
PUMD12 Dt1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
V
V
V
V
CBO
CEO
EBO
I
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage
positive − +40 V
negative −−10 V
I
I
P
T
T
T
O
CM
tot
stg
j
amb
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
≤ 25 °C − 300 mW
amb
Note
1. Refer to SC-88 standard mounting conditions.
1999 Apr 26 2
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistor PUMD12
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Refer to SC-88 standard mounting conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1 input resistor 33 47 61 kΩ
R2
------R1
C
c
thermal resistance from junction to ambient note 1 416 K/W
collector cut-off current IE= 0; VCB=50V −−100 nA
collector cut-off current IB= 0; VCE=30V −−1µA
I
= 0; VCE= 30 V; Tj= 150 °C −−50 µA
B
emitter cut-off current IC= 0; VEB=5V −−90 µA
DC current gain IC= 5 mA; VCE=5V 80 −−
collector-emitter saturation voltage IC= 10 mA; IB= 0.5 mA −−150 mV
input-off voltage IC= 100 µA; VCE=5V − 1.2 0.8 V
input-on voltage IC= 2 mA; VCE= 0.3 V 3 1.6 − V
resistor ratio 0.8 1 1.2
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz
TR1 −−2.5 pF
TR2 −−3pF
1999 Apr 26 3
Loading...