Philips PUMD12 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

MBD128

PUMD12

NPN/PNP resistor-equipped
transistor

Product specification

1999 Apr 26

Philips Semiconductors Product specification

NPN/PNP resistor-equipped transistor PUMD12

FEATURES

• Transistors with different polarity
and built-in bias resistors
R1 and R2 (typ. 47 kΩ each)

• No mutual interference between
the transistors

• Simplification of circuit design

• Reduces number of components

and board space.

APPLICATIONS

• Especially suitable for space
reduction in interface and driver
circuits

• Inverter circuit configurations
without use of external resistors.

DESCRIPTION

NPN/PNP resistor-equipped
transistors in an SC-88 plastic
package.

handbook, halfpage

56

132

Top view

Fig.1 Simplified outline (SC-88) and symbol.

2, 5

1, 4

MBK120

6, 3

Fig.2 Equivalent inverter

symbol.

4

MAM343

654

R1 R2

TR1

R2

123

TR2

R1

PINNING

PIN DESCRIPTION

1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2

MARKING

TYPE

NUMBER

MARKING CODE

PUMD12 Dt1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor; for the PNP transistor with negative polarity

V
V
V
V

CBO
CEO
EBO
I

collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage

positive − +40 V

negative −−10 V
I
I
P
T
T
T

O
CM

tot
stg
j
amb

output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T

≤ 25 °C; note 1 − 200 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Per device

P

tot

total power dissipation T

≤ 25 °C − 300 mW

amb

Note

1. Refer to SC-88 standard mounting conditions.
1999 Apr 26 2

Philips Semiconductors Product specification

NPN/PNP resistor-equipped transistor PUMD12

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

Note

1. Refer to SC-88 standard mounting conditions.

CHARACTERISTICS

=25°C unless otherwise specified.

T

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor; for the PNP transistor with negative polarity

I

CBO

I

CEO

I

EBO

h

FE

V

CEsat

V

i(off)

V

i(on)

R1 input resistor 33 47 61 kΩ

R2

------­R1

C

c

thermal resistance from junction to ambient note 1 416 K/W

collector cut-off current IE= 0; VCB=50V −−100 nA
collector cut-off current IB= 0; VCE=30V −−1µA

I

= 0; VCE= 30 V; Tj= 150 °C −−50 µA

B

emitter cut-off current IC= 0; VEB=5V −−90 µA
DC current gain IC= 5 mA; VCE=5V 80 −−
collector-emitter saturation voltage IC= 10 mA; IB= 0.5 mA −−150 mV
input-off voltage IC= 100 µA; VCE=5V − 1.2 0.8 V
input-on voltage IC= 2 mA; VCE= 0.3 V 3 1.6 − V

resistor ratio 0.8 1 1.2

collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz

TR1 −−2.5 pF
TR2 −−3pF

1999 Apr 26 3