Philips PUMB84 Datasheet
DATA SH EET
Product specification
Supersedes data of 1998 Aug 03
1999 Apr 12
DISCRETE SEMICONDUCTORS
PUMB4
PNP resistor-equipped
double transistor
ook, halfpage
MBD128
1999 Apr 12 2
Philips Semiconductors Product specification
PNP resistor-equipped double transistor PUMB4
FEATURES
• Transistors with built-in bias resistor R1 (typ. 10 kΩ)
• No mutual interference between the transistors
• Simplification of circuit design
• Reduces number of components and board space.
APPLICATIONS
• Especially suitable for space reduction in interface and
driver circuits
• Inverter circuit configurations without use of external
resistors.
DESCRIPTION
PNP resistor-equipped double transistor in an SC-88
plastic package.
MARKING
PINNING
TYPE NUMBER MARKING CODE
PUMB4 Bt4
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
MAM344
132
4
56
Top view
654
123
TR1
TR2
R1
R1
Fig.1 Simplified outline (SC-88) and symbol.
Fig.2 Equivalent inverter symbol.
MBK120
2, 5
6, 3
1, 4
1999 Apr 12 3
Philips Semiconductors Product specification
PNP resistor-equipped double transistor PUMB4
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
collector-base voltage open emitter −−50 V
V
CEO
collector-emitter voltage open base −−50 V
V
EBO
emitter-base voltage open collector −−5V
I
O
output current (DC) −−100 mA
I
CM
peak collector current −−100 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 300 mW
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 416 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
I
CBO
collector cut-off current IE= 0; VCB= −50 V −−−100 nA
I
CEO
collector cut-off current IB= 0; VCE= −30 V −−−1µA
I
B
= 0; VCE= −30 V; Tj= 150 °C −−−50 µA
I
EBO
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
h
FE
DC current gain IC= −1 mA; VCE= −5 V 200 −−
V
CEsat
collector-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−−150 mV
R1 input resistor 7 10 13 kΩ
C
c
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz −−3pF
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