Philips PUMB4 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
MBD128
PUMB4
PNP resistor-equipped
double transistor
Product specification
Supersedes data of 1998 Aug 03
1999 Apr 12
Philips Semiconductors Product specification
PNP resistor-equipped double transistor PUMB4
FEATURES
• Transistors with built-in bias resistor R1 (typ. 10 kΩ)
• No mutual interference between the transistors
• Simplification of circuit design
• Reduces number of components and board space.
handbook, halfpage
56
4
654
R1
APPLICATIONS
• Especially suitable for space reduction in interface and
driver circuits
• Inverter circuit configurations without use of external
resistors.
DESCRIPTION
PNP resistor-equipped double transistor in an SC-88
plastic package.
MARKING
TYPE NUMBER MARKING CODE
PUMB4 Bt4
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
TR1
132
Top view
MAM344
123
R1
Fig.1 Simplified outline (SC-88) and symbol.
2, 5
1, 4
MBK120
6, 3
Fig.2 Equivalent inverter symbol.
TR2
1999 Apr 12 2
Philips Semiconductors Product specification
PNP resistor-equipped double transistor PUMB4
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−50 V
emitter-base voltage open collector −−5V
output current (DC) −−100 mA
peak collector current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 416 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
collector cut-off current IE= 0; VCB= −50 V −−−100 nA
collector cut-off current IB= 0; VCE= −30 V −−−1µA
= 0; VCE= −30 V; Tj= 150 °C −−−50 µA
I
B
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −1 mA; VCE= −5 V 200 −−
collector-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−−150 mV
R1 input resistor 7 10 13 kΩ
C
c
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz −−3pF
1999 Apr 12 3
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