Philips PUMB3 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

book, halfpage

MBD128

PUMB3

PNP resistor-equipped double
transistor; R1 = 4.7 kΩ

Product specification 2001 Sep 19

Philips Semiconductors Product specification

PNP resistor-equipped double transistor; R1 = 4.7 kΩ PUMB3

FEATURES

• Transistors with built-in bias resistor R1 (typ. 4.7 kΩ)

• No mutual interference between the transistors

• Simplification of circuit design

• Reduces number of components and board space.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

DESCRIPTION

PNP resistor-equipped double transistor in an SC-88
(SOT363) plastic package.

MARKING

TYPE NUMBER MARKING CODE

(1)

PUMB3 B5*

Note

1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V
I

CEO

CM

collector-emitter voltage −50 V

peak collector current −100 mA
TR1 PNP −−
TR2 PNP −−
R1 bias resistor 4.7 kΩ

handbook, halfpage

132

Top view

56

4

MAM344

654

R1

TR1

123

TR2

R1

Fig.1 Simplified outline (SC-88; SOT363) and

symbol.

PINNING

PIN DESCRIPTION

1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2

2, 5

1, 4

MBK120

6, 3

Fig.2 Equivalent inverter symbol.

2001 Sep 19 2

Philips Semiconductors Product specification

PNP resistor-equipped double transistor; R1 = 4.7 kΩ PUMB3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor

V

CBO

V

CEO

V

EBO

V

I

I

O

I

CM

P

tot

T

stg

T

j

T

amb

Per device

P

tot

collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−50 V
emitter-base voltage open collector −−10 V
input voltage

positive − +10 V

negative −−40 V
output current (DC) −−100 mA
peak collector current −−100 mA
total power dissipation T

≤ 25 °C; note 1 − 200 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

total power dissipation T

≤ 25 °C; note 1 − 300 mW

amb

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 416 K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

2001 Sep 19 3