Philips PUMB11 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

MBD128

PUMB11

PNP resistor-equipped double
transistor

Product specification 2000 Aug 08

Philips Semiconductors Product specification

PNP resistor-equipped double transistor PUMB11

FEATURES

• Transistors with built-in bias resistors R1 and R2
(typ. 10 kΩ each)

• No mutual interference between the transistors

• Simplification of circuit design

• Reduces number of components and board space.

APPLICATIONS

• Especially suitable for space reduction in interface and
driver circuits

• Inverter circuit configurations without use of external
resistors.

DESCRIPTION

PNP resistor-equipped double transistor in an SC-88
(SOT363) plastic package.

handbook, halfpage

4

56

132

Top view

MAM426

Fig.1 Simplified outline (SC-88) and symbol.

654

R1 R2

TR1

R2

123

TR2

R1

MARKING

TYPE NUMBER MARKING CODE

PUMB11 Bt1

PINNING

PIN DESCRIPTION

1 and 4 emitter TR1; TR2
2 and 5 base TR1; TR2
6 and 3 collector TR1; TR2

2, 5

1, 4

MBK120

6, 3

Fig.2 Equivalent inverter symbol.

2000 Aug 08 2

Philips Semiconductors Product specification

PNP resistor-equipped double transistor PUMB11

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor

V

CBO

V

CEO

V

EBO

V

I

I

O

I

CM

P

tot

T

stg

T

j

T

amb

Per device

P

tot

collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−50 V
emitter-base voltage open collector −−10 V
input voltage

positive − +10 V

negative −−40 V
output current (DC) −−100 mA
peak collector current −−100 mA
total power dissipation T

≤ 25 °C; note 1 − 200 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

total power dissipation T

≤ 25 °C; note 1 − 300 mW

amb

Note

1. Refer to SC-88 standard mounting conditions.

2000 Aug 08 3