Philips PTC4001T Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
PTC4001T
NPN microwave power transistor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
1997 Feb 18
Philips Semiconductors Product specification
NPN microwave power transistor PTC4001T
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good characteristics stability and
excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
APPLICATIONS
Common collector oscillator circuits
under CW conditions in military and
professional applications up to
5 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave transistor in a SOT440A
metal ceramic flange package with
collector connected to flange.
QUICK REFERENCE DATA
Microwave performance up to T
MODE OF
OPERATION
=25°C in an oscillator circuit up to 3 GHz.
h
f
(GHz)
V
(V)
CC
P
L
(mW)
(mA)
class A (CW) 2.88 to 3; note 1 20 ≥550 200
Note
1. Oscillating frequency should stabilize in this range.
PINNING - SOT440A
PIN DESCRIPTION
1 base
2 emitter
3 collector connected to flange
handbook, 4 columns
Top view
1
c
b
3
2
MAM131
e
I
C
Marking code: 440.
1997 Feb 18 2
Fig.1 Simplified outline and symbol.
Philips Semiconductors Product specification
NPN microwave power transistor PTC4001T
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. At 0.1 mm from case.
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 16 V
collector-emitter voltage RBE=70Ω−35 V
emitter-base voltage open collector − 3V
average collector current − 0.25 A
total power dissipation Tmb=75°C − 4W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature t < 10 s; note 1 − 235 °C
handbook,
5
P
tot max
(W)
4
3
2
1
0
0 50 100 200
150
Tmb (°C)
Fig.2 Power derating curve as a function of
mounting base temperature.
MGD975
handbook, halfpage
1
I
C
(A)
0.22
−1
10
0.08
(1) (2)
−2
10
Tmb=75°C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE< 250Ω.
16
101
Fig.3 DC SOAR.
VCE (V)
MGA028
2
10
1997 Feb 18 3
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