Philips PTB23006U Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

PTB23006U

Microwave power transistor

Preliminary specification
Supersedes data of December 1994

1997 Feb 19

Philips Semiconductors Preliminary specification

Microwave power transistor PTB23006U

FEATURES

• Very high power gain

• Diffused emitter ballasting resistors

improve ruggedness

• Interdigitated emitter-base
structure

• Gold metallization with barrier layer
to prevent electromigration and
gold diffusion during life

• Multicell geometry improves power
sharing and reduces thermal
resistance

• Internal input prematching network.

APPLICA TIONS

Intended for use in common-base,
class C power amplifiers at
frequencies up to 2.3 GHz.

DESCRIPTION

NPN silicon planar epitaxial
microwave power transistor in a
SOT440A hermetically sealed metal
ceramic flange package, with base
connected to flange.

QUICK REFERENCE DATA

Microwave performance up to T

=25°C in a common-base class C

mb

narrowband amplifier.

MODE OF

OPERATION

f

(GHz)

V

(V)

CC

P

(W)

L

G

(dB)

p

η

C

(%)

Zi; Z

(Ω)

Class C (CW) 2 28 >5 >9 >40 see Figs 5

and 6

PINNING - SOT440A

PIN DESCRIPTION

1 collector
2 emitter
3 base connected to flange

handbook, 4 columns

Top view

1

c

b

3

2

MAM131

e

Fig.1 Simplified outline and symbol.

L

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 19 2

Philips Semiconductors Preliminary specification

Microwave power transistor PTB23006U

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

T

sld

Note

1. Up to 0.2 mm from ceramic.

collector-base voltage open emitter − 40 V
collector-emitter voltage RBE=0 − 40 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
collector current − 0.75 A
total power dissipation Tmb=75°C − 11 W
storage temperature −65 +200 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C

12

handbook, halfpage

P

tot

(W)

8

4

0

0 50 100 200

150

T ( C)

Fig.2 Power derating curve.

mb

MLC461

o

1997 Feb 19 3

Philips Semiconductors Preliminary specification

Microwave power transistor PTB23006U

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Note

1. See

“Mounting recommendations in the General part of handbook SC19a”.

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CES

V

(BR)CBO

V

(BR)CES

V

(BR)EBO

h

FE

thermal resistance from junction to mounting base Tj=75°C 8.5 K/W
thermal resistance from mounting base to heatsink note 1 0.7 K/W

collector cut-off current IE= 0; VCE=30V − 300 µA
collector-base breakdown voltage IC= 3 mA; IE=0 40 − V
collector-emitter breakdown voltage IC= 3 mA; RBE=0 40 − V
emitter-base breakdown voltage IC= 1.5 mA 3 − V
DC current gain IC= 450 mA; VCE= 3 V 15 150

APPLICATION INFORMATION

Microwave performance up to T

MODE OF

OPERATION

f

(GHz)

=25°C in a common-base class C test circuit.

mb

V

CE

(V)

class C (CW) 2 28 >5

typ. 5.8

P

(W)

L

G

p

(dB)

>9

typ. 10.5

η

C

(%)

>40

typ. 45

Zi; Z

L

(Ω)

see Figs 5

and 6

1997 Feb 19 4