Philips PTB23003X Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

andbook, halfpage

M3D031

PTB23003X

NPN microwave power transistor

Product specification
Supersedes data of 1997 Feb 19

1997 Nov 13

Philips Semiconductors Product specification

NPN microwave power transistor PTB23003X

FEATURES

• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR

• Interdigitated structure provides high emitter efficiency

• Multicell geometry gives good balance of dissipated

power and low thermal resistance

• Localized thick oxide auto-alignment process and gold
sandwich metallization ensure an optimum temperature
profile and excellent performance and reliability.

APPLICATIONS

Common-base, class B power amplifiers up to 4.2 GHz.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in
a metal ceramic SOT440A flange package with base
connected to the flange.

QUICK REFERENCE DATA

Microwave performance up to T

=25°C in a common-base class B circuit.

mb

PINNING - SOT440A

PIN DESCRIPTION

1 collector
2 emitter
3 base; connected to flange

lumns

Top view

Marking code: 2303X.

1

3

2

Fig.1 Simplified outline and symbol.

c

b

e

MAM131

MODE OF

OPERATION

f

(GHz)

V

(V)

CC

P

(W)

L

G

po

(dB)

η

(%)

C

Z

i

(Ω)

Z

(Ω)

L

CW 2 24 ≥3 ≥8.75 ≥45 2.5 + j14 8 + j6

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Nov 13 2

Philips Semiconductors Product specification

NPN microwave power transistor PTB23003X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

CES

I

C

P

tot

T

stg

T

j

T

sld

Note

1. Up to 0.3 mm from ceramic.

collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
collector-emitter voltage RBE=0 − 40 V
collector current (DC) − 0.5 A
total power dissipation Tmb=75°C; f > 1 MHz − 7.6 W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C

10

handbook, halfpage

P

tot

(W)

5

0

50 200

f >1 MHz.

0 50 100 150

Fig.2 Power derating curve.

MLC092

Tmb (

o

C)

1997 Nov 13 3