Philips ptb23002u DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
PTB23002U
NPN microwave power transistor
Product specification
Supersedes data of November 1994
1997 Feb 19
Philips Semiconductors Product specification
NPN microwave power transistor PTB23002U
FEATURES
• Very high power gain
• Internal input prematching network
• Diffused emitter ballasting resistors
improve ruggedness
• Interdigitated emitter-base
structure
• Gold metallization with barrier layer
to prevent electromigration and
gold diffusion during life
• Multicell geometry improves power
sharing and reduces thermal
resistance.
APPLICATIONS
Common-base, class C power
amplifiers at frequencies up to
2.3 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT440A hermetically sealed metal
ceramic flange package, with base
connected to flange.
QUICK REFERENCE DATA
Microwave performance up to Tmb=25°C in a common-base class C
narrowband amplifier.
MODE OF
OPERATION
f
(GHz)
V
(V)
CC
P
(W)
L
G
p
(dB)
η
(%)
C
Zi; Z
(Ω)
Class C (CW) 2.3 28 >2 >9 >45 see Figs 5
and 6
PINNING - SOT440A
PIN DESCRIPTION
1 collector
2 emitter
3 base connected to flange
handbook, 4 columns
Top view
1
c
b
3
2
MAM131
e
Fig.1 Simplified outline and symbol.
L
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19 2
Philips Semiconductors Product specification
NPN microwave power transistor PTB23002U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
collector-emitter voltage RBE=0Ω−40 V
emitter-base voltage open collector − 3V
collector current (DC) − 0.25 A
total power dissipation Tmb=75°C − 5W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C
handbook, halfpage
8
P
tot
(W)
6
4
2
0
−50 50
P
=5W.
tot max
0 100 200
150 250
MGA243
Tmb (
Fig.2 Maximum power dissipation derating as a
function of mounting base temperature.
300
MGA244
Pi (mW)
P
(W)
3
L
2
1
0
0
100
200 400
handbook, halfpage
o
C)
Fig.3 Output power as a function of input power.
1997 Feb 19 3
Philips Semiconductors Product specification
NPN microwave power transistor PTB23002U
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
Note
1. See “
CHARACTERISTICS
=25°C unless otherwise specified.
T
mb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CES
I
CBO
I
EBO
thermal resistance from junction to mounting base Tj=75°C 22 K/W
thermal resistance from mounting base to heatsink note 1 0.7 K/W
Mounting recommendations in the General part of handbook SC19a”
.
collector-base breakdown voltage IC= 1 mA; IE=0 40 − V
collector-emitter breakdown voltage IC= 1 mA; RBE=0Ω 40 − V
collector cut-off current VCE=30V; IE=0 − 15 µA
emitter cut-off current VEB= 1.5 V; IC=0 − 1.5 µA
APPLICATION INFORMATION
Microwave performance up to T
=25°C in a common-base test circuit as shown in Fig.4 and working in
mb
CW class C mode.
MODE OF
OPERATION
Class C
(CW)
f
(GHz)
V
(V)
CC
2.3 28 ≥2;
typ. 2.3
P
(W)
L
G
(dB)
≥9;
typ. 9.6
p
η
C
(%)
≥45;
Zi; Z
L
(Ω)
see Figs 5 and 6
typ. 50
List of components (see Fig.4)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
L1, L2 3 turns 0.5 mm diameter copper wire int.dia. = 2 mm
C1 feedthrough bypass capacitor Erie, ref.1250-003
C2 DC blocking capacitor 100 pF
C3 tuning capacitor 0.5-5pF Tekelec 5855
1997 Feb 19 4
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