Philips PRF949 Datasheet
DISCRETE SEMICONDUCTORS
M3D173
DATA SHEET
PRF949
UHF wideband transistor
Preliminary specification 1999 Oct 29
Philips Semiconductors Preliminary specification
UHF wideband transistor PRF949
FEATURES
• Small size
• Low noise
• Low distortion
• High gain
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Communication and instrumentation systems.
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT416
(SC75) package. The transistor is primarily intended for
wideband applications in the GHz-range in the RF front
end of analog and digital cellular telephones, cordless
phones, radar detectors, pagers and satellite TV-tuners.
QUICK REFERENCE DATA
PINNING SOT416 (SC75)
PIN DESCRIPTION
1base
2 emitter
3 collector
handbook, halfpage
12
Marking code: V0
3
Fig.1 Simplified outline (SOT416).
MAM337
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
re
f
T
G
UM
NF noise figure Γ
feedback capacitance IC=0; VCB=6V; f=1MHz − 0.3 tbf pF
transition frequency IC=15mA; VCE=6V; fm=1GHz 7 9 − GHz
maximum unilateral power gain IC=15mA; VCE=6V;
T
=25°C; f = 1 GHz
amb
= Γ
S
; IC=5mA; VCE=6V;
opt
− 16 − dB
− 1.5 2.5 dB
f=1GHz
P
R
tot
th j-s
total power dissipation Ts=90°C; note 1 −−180 mW
thermal resistance from junction
P
= 180 mW −−335 K/W
tot
to soldering point
Note
is the temperature at the soldering point of the collector pin.
1. T
s
1999 Oct 29 2
Philips Semiconductors Preliminary specification
UHF wideband transistor PRF949
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
Note
1. T
s
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 1.5 V
DC collector current − 50 mA
average collector current − 50 mA
total power dissipation Ts=60°C; note 1 − 250 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction
P
= 180 mW; Ts=90°C; note 1 335 K/W
tot
to soldering point
Note
1. T
is the temperature at the soldering point of the collector pin.
s
1999 Oct 29 3
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