Philips PPC5001T Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
PPC5001T
NPN microwave power transistor
Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15
1997 Mar 03
Philips Semiconductors Product specification
NPN microwave power transistor PPC5001T

FEATURES

Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
Interdigitated structure provides high emitter efficiency
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry gives good balance of dissipated power and low thermal resistance

APPLICATIONS

Intended for use in common-collector oscillator circuits in military and professional applications up to 5 GHz.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT447A metal ceramic flange package.

PINNING - SOT447A

PIN DESCRIPTION
1 base 2 emitter 3 collector
handbook, halfpage
Marking code: 395
3
1
2
Side view
c
b
e
MAM331
Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

Microwave performance up to T
MODE OF OPERATION
=25°C in an oscillator circuit up to 5 GHz; typical values.
mb
f
(GHz)
V
(V)
CE
I
C
(mA)
(mW)
Class A (CW) 5 20 200 450
P
L
Philips Semiconductors Product specification
NPN microwave power transistor PPC5001T

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. At 0.1 mm from the case.
collector-base voltage open emitter 40 V collector-emitter voltage RBE=70Ω−35 V collector-emitter voltage open emitter 16 V emitter-base voltage open collector 3V collector current (DC) 0.25 A total power dissipation T
75 °C 4W
amb
storage temperature 65 +200 °C junction temperature 200 °C soldering temperature t 10 s; note 1 235 °C
handbook,
5
P
tot max
(W)
4
3
2
1
0
0 50 100 200
150
Tmb (°C)
Fig.2 Power dissipation derating as a function of
mounting-base temperature.
MGD975
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