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DISCRETE SEMICONDUCTORS
DATA SH EET
PPC5001T
NPN microwave power transistor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
1997 Mar 03
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Philips Semiconductors Product specification
NPN microwave power transistor PPC5001T
FEATURES
• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
• Interdigitated structure provides high emitter efficiency
• Gold metallization realizes very stable characteristics
and excellent lifetime
• Multicell geometry gives good balance of dissipated
power and low thermal resistance
APPLICATIONS
Intended for use in common-collector oscillator circuits in
military and professional applications up to 5 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT447A metal ceramic flange package.
PINNING - SOT447A
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Marking code: 395
3
1
2
Side view
c
b
e
MAM331
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to T
MODE OF OPERATION
=25°C in an oscillator circuit up to 5 GHz; typical values.
mb
f
(GHz)
V
(V)
CE
I
C
(mA)
(mW)
Class A (CW) 5 20 200 450
P
L
1997 Mar 03 2
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Philips Semiconductors Product specification
NPN microwave power transistor PPC5001T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. At 0.1 mm from the case.
collector-base voltage open emitter − 40 V
collector-emitter voltage RBE=70Ω−35 V
collector-emitter voltage open emitter − 16 V
emitter-base voltage open collector − 3V
collector current (DC) − 0.25 A
total power dissipation T
≤ 75 °C − 4W
amb
storage temperature −65 +200 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C
handbook,
5
P
tot max
(W)
4
3
2
1
0
0 50 100 200
150
Tmb (°C)
Fig.2 Power dissipation derating as a function of
mounting-base temperature.
MGD975
1997 Mar 03 3