Philips PMST3906 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D187
PMST3906
PNP switching transistor
Product specification
Supersedes data of 1997 May 27
1999 Apr 22
Philips Semiconductors Product specification
PNP switching transistor PMST3906
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Switching in telephony and professional communication
equipment.
DESCRIPTION
PNP switching transistor in a SOT323 plastic package.
NPN complement: PMST3904.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMST3906 ∗2A
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM048
Fig.1 Simplified outline (SOT323) and symbol.
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−6V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22 2
Philips Semiconductors Product specification
PNP switching transistor PMST3906
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB= −30 V −−50 nA
I
= 0; VCB= −30 V; Tj= 150 °C −−10 µA
E
emitter cut-off current IC= 0; VEB= −6V −−50 nA
DC current gain VCE= −1 V; (see Fig.2)
I
= −0.1 mA 60 −
C
= −1mA 80 −
I
C
I
=−10 mA 100 300
C
I
= −50 mA; note 1 60 −
C
I
= −100 mA; note 1 30 −
C
collector-emitter saturation
voltage
IC= −10 mA; IB= −1 mA; note 1 −−200 mV
I
= −50 mA; IB= −5 mA; note 1 −−200 mV
C
base-emitter saturation voltage IC= −10 mA; IB= −1 mA; note 1 −−850 mV
I
= −50 mA; IB= −5 mA; note 1 −−950 mV
C
collector capacitance IE=ie= 0; VCB= −5 V; f = 1 MHz − 4.5 pF
emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 10 pF
transition frequency IC= −10 mA; VCE= −20 V; f = 100 MHz 250 − MHz
= −100 µA; VCE= −5 V; RS=1kΩ;
C
− 4dB
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
delay time − 35 ns
rise time − 35 ns
turn-off time − 300 ns
storage time − 225 ns
fall time − 75 ns
= −10 mA; I
Con
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 22 3
= −1 mA; I
Bon
=1mA − 65 ns
Boff
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