Philips PMST3904 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D187
PMST3904
NPN switching transistor
Product specification
Supersedes data of 1997 Jul 04
1999 Apr 22
Philips Semiconductors Product specification
NPN switching transistor PMST3904
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Telephony
• Professional communication equipment.
DESCRIPTION
NPN switching transistor in a SOT323 plastic package.
PNP complement: PMST3906.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMST3904 ∗1A
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6V
collector current (DC) − 200 mA
peak collector current − 300 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22 2
Philips Semiconductors Product specification
NPN switching transistor PMST3904
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB=30V − 50 nA
I
= 0; VCB=30V; Tj= 150 °C − 10 µA
E
emitter cut-off current IC= 0; VEB=6V − 50 nA
DC current gain VCE= 1 V; see Fig.2
I
= 0.1 mA 60 −
C
= 1 mA 80 −
I
C
I
= 10 mA 100 300
C
I
= 50 mA; note 1 60 −
C
I
= 100 mA; note 1 30 −
C
collector-emitter saturation voltage IC= 10 mA; IB= 1 mA; note 1 − 200 mV
I
= 50 mA; IB= 5 mA; note 1 − 200 mV
C
base-emitter saturation voltage IC= 10 mA; IB= 1 mA; note 1 650 850 mV
I
= 50 mA; IB= 5 mA; note 1 − 950 mV
C
collector capacitance IE=ie= 0; VCB=5V; f=1MHz − 4pF
emitter capacitance IC=ic= 0; VEB= 500 mV;
− 8pF
f = 1 MHz
transition frequency IC= 10 mA; VCE=20V;
300 − MHz
f = 100 MHz
= 100 µA; VCE=5V; RS=1kΩ
C
− 5dB
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); see Fig.3
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
delay time − 35 ns
I
Con
Boff
= 10 mA; I
= −1mA
rise time − 35 ns
turn-off time − 240 ns
storage time − 200 ns
fall time − 50 ns
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 22 3
Bon
= 1 mA;
− 65 ns
Loading...