Philips PMST2907A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D187
PMST2907A
PNP switching transistor
Product specification
Supersedes data of 1997 Jul 08
1999 Apr 22
Philips Semiconductors Product specification
PNP switching transistor PMST2907A
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• Medium power switching
• General purpose amplification.
DESCRIPTION
PNP switching transistor in an SC-70; SOT323 plastic
package. NPN complement: PMST2222A.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMST2907A ∗2F
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM048
Fig.1 Simplified outline (SC-70; SOT323) and
symbol.
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−60 V
collector-emitter voltage open base −−60 V
emitter-base voltage open collector −−5V
collector current (DC) −−200 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22 2
Philips Semiconductors Product specification
PNP switching transistor PMST2907A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB= −50 V −−10 nA
I
= 0; VCB= −50 V; Tj= 150 °C −−10 µA
E
emitter cut-off current IC= 0; VEB= −3V −−50 nA
DC current gain VCE= −10 V
I
= −0.1 mA 75 −
C
= −1 mA 100 −
I
C
I
= −10 mA; note 1 100 −
C
I
= −150 mA; note 1 100 300
C
I
= −500 mA; note 1 50 −
C
collector-emitter saturation
voltage
IC= −150 mA; IB= −15 mA; note 1 −−400 mV
I
= −500 mA; IB= −50 mA; note 1 −−1.6 V
C
base-emitter saturation voltage IC= −150 mA; IB= −15 mA; note 1 −−1.3 V
I
= −500 mA; IB= −50 mA; note 1 −−2.6 V
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 8pF
emitter capacitance IC=ic= 0; VEB= −2 V; f = 1 MHz − 30 pF
transition frequency IC= −50 mA; VCE= −20 V;
200 − MHz
f = 100 MHz; note 1
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
delay time − 15 ns
= −150 mA; I
Con
I
=15mA
Boff
rise time − 35 ns
turn-off time − 300 ns
storage time − 250 ns
fall time − 50 ns
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 22 3
= −15 mA;
Bon
− 45 ns
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