Philips PMST2369 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D187
PMST2369
NPN switching transistor
Product specification
Supersedes data of 1997 May 05
1999 Apr 22
Philips Semiconductors Product specification
NPN switching transistor PMST2369
FEATURES
• Low current (max. 200 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 15 V).
APPLICATIONS
• High-speed switching applications, primarily in portable
and consumer equipment.
DESCRIPTION
handbook, halfpage
NPN switching transistor in a SOT323 plastic package.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMST2369 ∗1J
Note
1. ∗ = - : Made in Hong Kong.
Fig.1 Simplified outline (SOT323) and symbol.
∗ = t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
2 emitter
3 collector
1
Top view
3
3
1
2
2
MAM062
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 5V
collector current (DC) − 200 mA
peak collector current tp≤ 10 µs − 300 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22 2
Philips Semiconductors Product specification
NPN switching transistor PMST2369
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB=20V − 400 nA
I
= 0; VCB=20V; Tj= 125 °C − 30 µA
E
emitter cut-off current IC= 0; VEB=4V − 100 nA
DC current gain IC= 10 mA; VCE= 1 V 40 120
I
= 10 mA; VCE=1V; T
C
= 100 mA; VCE= 2 V; note 1 20 −
I
C
= −55 °C20 −
amb
collector-emitter saturation voltage IC= 10 mA; IB=1mA − 250 mV
base-emitter saturation voltage IC= 10 mA; IB= 1 mA 700 850 mV
collector capacitance IE=ie= 0; VCB= 5 V; f = 1 MHz − 4pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 500 − MHz
turn-on time I
delay time − 4ns
I
Con
Boff
= 10 mA; I
= −1.5 mA
Bon
= 3 mA;
− 10 ns
rise time − 6ns
turn-off time − 20 ns
storage time − 10 ns
fall time − 10 ns
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 22 3
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