Philips PMST2222A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D187
PMST2222; PMST2222A
NPN switching transistors
Product specification
Supersedes data of 1997 Jul 14
1999 Apr 22
Philips Semiconductors Product specification
NPN switching transistors PMST2222; PMST2222A
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• High-speed switching and linear amplification.
DESCRIPTION
NPN switching transistor in a SOT323 plastic package.
PNP complement: PMST2907A.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMST2222 ∗1B
PMST2222A ∗1P
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
PMST2222 − 60 V
PMST2222A − 75 V
V
CEO
collector-emitter voltage open base
PMST2222 − 30 V
PMST2222A − 40 V
V
EBO
emitter-base voltage open collector
PMST2222 − 5V
PMST2222A − 6V
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector current (DC) − 600 mA
peak collector current − 800 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22 2
Philips Semiconductors Product specification
NPN switching transistors PMST2222; PMST2222A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
thermal resistance from junction to ambient note1 625 K/W
collector cut-off current IE= 0; VCB=50V − 10 nA
PMST2222 I
collector cut-off current I
PMST2222A I
= 0; VCB=50V; Tj= 125 °C − 10 µA
E
= 0; VCB=60V − 10 nA
E
= 0; VCB=60V; Tj= 125 °C − 10 µA
E
collector cut-off current IC= 0; VEB=3V − 10 nA
DC current gain IC= 0.1 mA; VCE=10V 35 −
I
= 1 mA; VCE=10V 50 −
C
I
= 10 mA; VCE=10V 75 −
C
I
DC current gain I
= 10 mA; VCE=10V; T
C
I
= 150 mA; VCE= 1 V; note 1 50 −
C
I
= 150 mA; VCE= 10 V; note 1 100 300
C
= 500 mA; VCE= 10 V; note 1
C
= −55 °C35 −
amb
PMST2222 30 −
PMST2222A 40 −
collector-emitter saturation voltage IC= 150 mA; IB= 15 mA; note 1 − 400 mV
PMST2222 I
collector-emitter saturation voltage I
PMST2222A I
= 500 mA; IB= 50 mA; note 1 − 1.6 V
C
= 150 mA; IB= 15 mA; note 1 − 300 mV
C
= 500 mA; IB= 50 mA; note 1 − 1V
C
base-emitter saturation voltage IC= 150 mA; IB= 15 mA; note 1 − 1.3 V
PMST2222 I
base-emitter saturation voltage I
PMST2222A I
= 500 mA; IB= 50 mA; note 1 − 2.6 V
C
= 150 mA; IB= 15 mA; note 1 0.6 1.2 V
C
= 500 mA; IB= 50 mA; note 1 − 2V
C
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 8pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz
PMST2222 − 30 pF
PMST2222A − 25 pF
transition frequency IC= 20 mA; VCE= 20 V; f = 100 MHz
PMST2222 250 − MHz
PMST2222A 300 − MHz
1999 Apr 22 3
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