Philips PMSS3906 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D187
PMSS3906
PNP switching transistor
Product specification
Supersedes data of 1997 Jun 02
1999 Apr 22
Philips Semiconductors Product specification
PNP switching transistor PMSS3906
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Switching in e.g. telephony and professional
communication equipment.
DESCRIPTION
PNP switching transistor in an SC-70; SOT323 plastic
package. NPN complement: PMSS3904.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMSS3906 ∗06
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
2
MAM048
Fig.1 Simplified outline (SC-70; SOT323)
and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22 2
Philips Semiconductors Product specification
PNP switching transistor PMSS3906
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB= −30 V −−50 nA
I
= 0; VCB= −30 V; Tj= 150 °C −−10 µA
E
emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain VCE= −1V
I
=−0.1 mA 60 −
C
= −1mA 80 −
I
C
I
=−10 mA 100 300
C
I
= −50 mA; note 1 60 −
C
I
= −100 mA; note 1 30 −
C
collector-emitter saturation
voltage
IC= −10 mA; IB= −1mA −−250 mV
I
= −50 mA; IB= −5 mA; note 1 −−400 mV
C
base-emitter saturation voltage IC= −10 mA; IB= −1mA −−850 mV
I
= −50 mA; IB= −5 mA; note 1 −−950 mV
C
collector capacitance IE=ie= 0; VCB= −5 V; f = 1 MHz − 4.5 pF
emitter capacitance IC=ic= 0; VEB= −0.5 V; f = 1 MHz − 14 pF
transition frequency IE= −10 mA; VCB= −20 V; f = 100 MHz 150 − MHz
= −100 µA; VCE= −5 V; RS=1kΩ;
C
− 4dB
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); see Fig.2
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
delay time − 50 ns
rise time − 50 ns
turn-off time − 700 ns
storage time − 600 ns
fall time − 100 ns
= −10 mA; I
Con
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 22 3
= −1 mA; I
Bon
=1mA − 100 ns
Boff
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