Philips PMMT591A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PMMT591A
PNP BISS transistor
Product specification
Supersedes data of 1999 May 21
1999 Aug 04
Philips Semiconductors Product specification
PNP BISS transistor PMMT591A
FEATURES
• High current (max. 1 A)
• Low collector-emitter saturation voltage ensures
reduced power consumption.
APPLICATIONS
• Batterypoweredunitswherehighcurrentandlowpower
consumption are important.
DESCRIPTION
PNP BISS (Breakthrough In Small Signal) transistor in a
SOT23 plastic package. NPN complement: PMMT491A.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMMT591A 9B∗
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−2A
peak base current −−1A
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Aug 04 2
Philips Semiconductors Product specification
PNP BISS transistor PMMT591A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= −30 V −−100 nA
collector cut-off current IB= 0; VCE= −30 V −−100 nA
emitter cut-off current IC= 0; VEB= −5V −−100 nA
DC current gain VCE= −5 V; note 1
I
= −1 mA 300 −
C
I
= −100 mA 300 800
C
I
= −500 mA 250 −
C
I
= −1 A 160 −
C
collector-emitter saturation voltage note 1
= −100 mA; IB= −1mA −−200 mV
I
C
I
= −500 mA; IB= −20 mA −−350 mV
C
I
= −1 A; IB= −100 mA −−500 mV
C
base-emitter saturation voltage IC= −1 A; IB= −50 mA; note 1 −−1.1 V
base-emitter voltage VCE= −5 V; IC= −1 A; note 1 −−1V
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 12 pF
transition frequency IC= −50 mA; VCE= −10 V;
150 − MHz
f = 100 MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Aug 04 3
Loading...