Philips PMMT491A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PMMT491A
NPN BISS transistor
Preliminary specification
Supersedes data of 1998 Aug 06
1999 May 21
Philips Semiconductors Preliminary specification
NPN BISS transistor PMMT491A
FEATURES
• High current (max. 1 A)
• Low collector-emitter saturation voltage ensures
reduced power consumption.
APPLICATIONS
• Battery powered units where high current and low power
consumption are important.
DESCRIPTION
NPN BISS (Breakthrough In Small Signal) transistor in a
SOT23 plastic package. PNP complement: PMMT591A.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMMT491A 9A∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 2A
peak base current − 1A
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 21 2
Philips Semiconductors Preliminary specification
NPN BISS transistor PMMT491A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=30V − 100 nA
collector cut-off current IB= 0; VCE=30V − 100 nA
emitter cut-off current IC= 0; VEB=5V − 100 nA
DC current gain VCE= 5 V; note 1
I
= 1 mA 300 −
C
= 500 mA 300 900
I
C
I
= 1 A 200 −
C
collector-emitter saturation voltage note 1
I
= 100 mA; IB=1mA − 200 mV
C
I
= 500 mA; IB=50mA − 300 mV
C
I
= 1 A; IB= 100 mA − 500 mV
C
base-emitter saturation voltage IC= 1 A; IB= 100 mA; note 1 − 1.2 V
base-emitter voltage VCE=5V;IC= 1 A; note 1 − 1.1 V
collector capacitance IE=ie= 0; VCB=10V; f=1MHz − 10 pF
transition frequency IC= 50 mA; VCE= 10 V; f = 100 MHz 150 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 May 21 3
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