Philips PMLL4448, PMLL4148L Datasheet

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PMLL4148; PMLL4448
High-speed diodes
Product specification Supersedes data of 1996 Sep 18
1999 May 27
Philips Semiconductors Product specification
High-speed diodes PMLL4148; PMLL4448
FEATURES
Small hermetically sealed glass SMD package
High switching speed: max. 4 ns
DESCRIPTION
The PMLL4148 and PMLL4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages.
Continuous reverse voltage: max. 75 V
Repetitive peak reverse voltage: max. 75 V
handbook, 4 columns
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Repetitive peak forward current: max. 450 mA.
APPLICATIONS
High-speed switching
The marking band indicates the cathode.
Fig.1 Simplified outline (SOD80C) and symbol.
MAM061
Fast logic applications.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V V I
F
I
FRM
I
FSM
RRM R
repetitive peak reverse voltage 75 V continuous reverse voltage 75 V continuous forward current see Fig.2; note 1 200 mA repetitive peak forward current 450 mA non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs 4A t=1ms 1A t=1s 0.5 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 500 mW
amb
storage temperature 65 +200 °C junction temperature 200 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 27 2
Philips Semiconductors Product specification
High-speed diodes PMLL4148; PMLL4448
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
I
R
C
d
t
rr
V
fr
forward voltage see Fig.3
PMLL4148 I PMLL4448 I
=10mA 1V
F
= 5 mA 620 720 mV
F
= 100 mA 1V
I
F
reverse current VR= 20 V; see Fig.5 25 nA
V
= 20 V; Tj= 150 °C; see Fig.5 50 µA
R
reverse current; PMLL4448 VR= 20 V; Tj= 100 °C; see Fig.5 3 µA diode capacitance f = 1 MHz; VR= 0; see Fig.6 4 pF reverse recovery time when switched from IF= 10 mA to
4ns IR= 60 mA; RL= 100 ; measured at IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF=50mA;
2.5 V
tr=20 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R R
th j-tp th j-a
thermal resistance from junction to tie-point 300 K/W thermal resistance from junction to ambient note 1 350 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 27 3
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