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PMLL4148; PMLL4446;
PMLL4448
High-speed diodes
Product specification
Supersedes data of April 1996
File under Discrete Semiconductors, SC01
1996 Sep 18
Philips Semiconductors Product specification
Fig.1 Simplified outline (SOD80C) and symbol.
Cathode indicated by black band.
handbook, 4 columns
MAM061
k a
High-speed diodes PMLL4148; PMLL4446; PMLL4448
FEATURES
• Small hermetically sealed glass
SMD package
• High switching speed: max. 4 ns
DESCRIPTION
The PMLL4148, PMLL4446, PMLL4448 are high-speed switching diodes
fabricated in planar technology, and encapsulated in small hermetically sealed
glass SOD80C SMD packages.
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 75 V
• Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
• High-speed switching
• Fast logic applications.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
RRM
R
repetitive peak reverse voltage − 75 V
continuous reverse voltage − 75 V
continuous forward current see Fig.2; note 1 − 200 mA
repetitive peak forward current − 450 mA
non-repetitive peak forward current square wave; Tj= 25 °C prior to
surge; see Fig.4
t = 1 µs − 4 A
t = 1 ms − 1 A
t = 1 s − 0.5 A
P
tot
T
stg
T
j
total power dissipation T
= 25 °C; note 1 − 500 mW
amb
storage temperature −65 +200 °C
junction temperature − 200 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 18 2
Philips Semiconductors Product specification
High-speed diodes PMLL4148; PMLL4446; PMLL4448
ELECTRICAL CHARACTERISTICS
Tj= 25 °C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
I
R
C
d
t
rr
V
fr
forward voltage see Fig.3
PMLL4148 IF= 10 mA − 1.0 V
PMLL4446 I
= 20 mA − 1.0 V
F
PMLL4448 IF= 5 mA 620 720 mV
IF= 100 mA − 1.0 V
reverse current VR= 20 V; see Fig.5 25 nA
VR= 20 V; Tj= 150 °C; see Fig.5 − 50 µA
reverse current; PMLL4448 VR= 20 V; Tj= 100 °C; see Fig.5 − 3 µA
diode capacitance f = 1 MHz; VR= 0; see Fig.6 4 pF
reverse recovery time when switched from IF= 10 mA to
4 ns
IR= 60 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF= 50 mA;
− 2.5 V
tr= 20 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 300 K/W
thermal resistance from junction to ambient note 1 350 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 18 3
Philips Semiconductors Product specification
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Device mounted on an FR4 printed-circuit board.
handbook, halfpage
0 100 200
300
200
0
100
MBG451
T
amb
(oC)
I
F
(mA)
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
0 1 2
600
0
200
400
MBG464
VF (V)
I
F
(mA)
(1) (2) (3)
(1) Tj= 175°C; typical values.
(2) Tj= 25 °C; typical values.
(3) Tj= 25 °C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj= 25 °C prior to surge.
handbook, full pagewidth
MBG704
10
tp (µs)
1
I
FSM
(A)
10
2
10
−1
10
4
10
2
10
3
10
1
High-speed diodes PMLL4148; PMLL4446; PMLL4448
GRAPHICAL DATA
1996 Sep 18 4
Philips Semiconductors Product specification
Fig.5 Reverse current as a function of junction
temperature.
handbook, halfpage
0 100
Tj (
o
C)
200
10
3
10
2
10
−1
10
−2
10
(1) (2)
1
I
R
(µA)
MGD006
(3)
(1) VR= 75V; maximum values.
(2) VR= 75V; typical values.
(3) VR= 20V; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj= 25°C.
handbook, halfpage
0 10 20
1.2
1.0
0.6
0.4
0.8
MGD004
VR (V)
C
d
(pF)
High-speed diodes PMLL4148; PMLL4446; PMLL4448
1996 Sep 18 5
Philips Semiconductors Product specification
Fig.7 Reverse recovery voltage test circuit and waveforms.
handbook, full pagewidth
t
rr
(1)
I
F
t
output signal
t
r
t
t
p
10%
90%
V
R
input signal
V = V I x R
R F S
R = 50SΩ
I
F
D.U.T.
R = 50iΩ
SAMPLING
OSCILLOSCOPE
MGA881
(1) IR= 1 mA.
Fig.8 Forward recovery voltage test circuit and waveforms.
t
r
t
t
p
10%
90%
I
input
signal
R = 50SΩ
I
R = 50iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MGA882
V
fr
t
output
signal
V
High-speed diodes PMLL4148; PMLL4446; PMLL4448
1996 Sep 18 6
Philips Semiconductors Product specification
Fig.9 SOD80C.
Dimensions in mm.
handbook, full pagewidth
MBA390 - 2
1.60
1.45
3.7
3.3
0.3 0.3
O
High-speed diodes PMLL4148; PMLL4446; PMLL4448
PACKAGE OUTLINE
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 18 7
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