Philips PMLL4150, PMLL4151, PMLL4153 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
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M3D054
PMLL4150; PMLL4151;
PMLL4153
High-speed diodes
Product specification
Supersedes data of April 1996
1996 Sep 18
Philips Semiconductors Product specification
High-speed diodes PMLL4150; PMLL4151; PMLL4153
FEATURES
• Small hermetically sealed glass
SMD package
• High switching speed: max. 4 ns
• General application
• Continuous reverse voltage:
max. 50 V
• Repetitive peak reverse voltage:
max. 75 V
• Repetitive peak forward current:
max. 600 mA and 450 mA
respectively.
APPLICATIONS
• High-speed switching
• The PMLL4150 is primarily
intended for general purpose use in
computer and industrial
applications.
• The PMLL4151 and PMLL4153 are
intended for military and industrial
applications.
DESCRIPTION
The PMLL4150, PMLL4151, PMLL4153 are high-speed switching diodes
fabricated in planar technology, and encapsulated in small hermetically sealed
glass SOD80C SMD packages.
handbook, 4 columns
Cathode indicated by black band.
ka
MAM061
Fig.1 Simplified outline (SOD80C) and symbol.
1996 Sep 18 2
Philips Semiconductors Product specification
High-speed diodes PMLL4150; PMLL4151; PMLL4153
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
P
T
T
RRM
R
tot
stg
j
repetitive peak reverse voltage
PMLL4151 − 75 V
PMLL4153 − 75 V
continuous reverse voltage − 50 V
continuous forward current see Fig.2; note 1
PMLL4150 − 300 mA
PMLL4151 − 200 mA
PMLL4153 − 200 mA
repetitive peak forward current
PMLL4150 − 600 mA
PMLL4151 − 450 mA
PMLL4153 − 450 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A
total power dissipation T
=25°C; note 1 − 500 mW
amb
storage temperature −65 +200 °C
junction temperature − 200 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 18 3
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