Philips PMLL4148, PMLL4446, PMLL4448 Technical data
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PMLL4148; PMLL4446;
PMLL4448
High-speed diodes
Product specification
Supersedes data of April 1996
File under Discrete Semiconductors, SC01
1996 Sep 18
Philips Semiconductors Product specification
Fig.1 Simplified outline (SOD80C) and symbol.
Cathode indicated by black band.
handbook, 4 columns
MAM061
k a
High-speed diodes PMLL4148; PMLL4446; PMLL4448
FEATURES
• Small hermetically sealed glass
SMD package
• High switching speed: max. 4 ns
DESCRIPTION
The PMLL4148, PMLL4446, PMLL4448 are high-speed switching diodes
fabricated in planar technology, and encapsulated in small hermetically sealed
glass SOD80C SMD packages.
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 75 V
• Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
• High-speed switching
• Fast logic applications.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
RRM
R
repetitive peak reverse voltage − 75 V
continuous reverse voltage − 75 V
continuous forward current see Fig.2; note 1 − 200 mA
repetitive peak forward current − 450 mA
non-repetitive peak forward current square wave; Tj= 25 °C prior to
surge; see Fig.4
t = 1 µs − 4 A
t = 1 ms − 1 A
t = 1 s − 0.5 A
P
tot
T
stg
T
j
total power dissipation T
= 25 °C; note 1 − 500 mW
amb
storage temperature −65 +200 °C
junction temperature − 200 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 18 2
Philips Semiconductors Product specification
High-speed diodes PMLL4148; PMLL4446; PMLL4448
ELECTRICAL CHARACTERISTICS
Tj= 25 °C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
I
R
C
d
t
rr
V
fr
forward voltage see Fig.3
PMLL4148 IF= 10 mA − 1.0 V
PMLL4446 I
= 20 mA − 1.0 V
F
PMLL4448 IF= 5 mA 620 720 mV
IF= 100 mA − 1.0 V
reverse current VR= 20 V; see Fig.5 25 nA
VR= 20 V; Tj= 150 °C; see Fig.5 − 50 µA
reverse current; PMLL4448 VR= 20 V; Tj= 100 °C; see Fig.5 − 3 µA
diode capacitance f = 1 MHz; VR= 0; see Fig.6 4 pF
reverse recovery time when switched from IF= 10 mA to
4 ns
IR= 60 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF= 50 mA;
− 2.5 V
tr= 20 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 300 K/W
thermal resistance from junction to ambient note 1 350 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 18 3
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