Philips PML260SN Technical data
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PML260SN
N-channel TrenchMOS standard level FET
Rev. 02 — 29 May 2006 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a
surface-mounted plastic package using TrenchMOS technology.
1.2 Features
n Standard level threshold n Low profile and small footprint
n Very low thermal impedance n Low on-state resistance
1.3 Applications
n Primary side switching n DC-to-DC converters
n Portable appliances
1.4 Quick reference data
n VDS≤ 200 V n ID≤ 8.8 A
n R
≤ 294 mΩ n QGD= 4.2 nC (typ)
DSon
2. Pinning information
Table 1. Pinning
Pin Description Simplified outline Symbol
1, 2, 3 source (S)
4 gate (G)
5, 6, 7, 8 drain (D)
8765
1234
Transparent
top view
SOT873-1 (HVSON8)
G
mbb076
D
S
Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information
Type number Package
Name Description Version
PML260SN HVSON8 plastic thermal enhanced very thin small outline package; no leads;
SOT873-1
8 terminals; body 3.3 × 3.3 × 0.85 mm
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
GS
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
Avalanche ruggedness
E
DS(AL)S
drain-source voltage 25 °C ≤ Tj≤ 150 °C - 200 V
gate-source voltage - ±20 V
drain current Tmb=25°C; VGS= 10 V; see Figure 2 and 3 - 8.8 A
= 100 °C; VGS= 10 V; see Figure 2 - 5.5 A
T
mb
peak drain current Tmb=25°C; pulsed; tp≤ 10 µs; see Figure 3 -15A
total power dissipation Tmb=25°C; see Figure 1 -50W
storage temperature −55 +150 °C
junction temperature −55 +150 °C
source current Tmb=25°C - 8.8 A
peak source current Tmb=25°C; pulsed; tp≤ 10 µs - 15 A
non-repetitive drain-source
avalanche energy
unclamped inductive load; ID= 3.5 A;
t
= 0.05 ms; VDS≤ 200 V; RGS=50Ω;
p
V
= 10 V; starting at Tj=25°C
GS
-22mJ
PML260SN_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 29 May 2006 2 of 12
Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
120
P
der
(%)
80
40
0
0 50 100 150 200
P
tot
P
der
----------------------- -
P
tot 25°C()
100 %×= I
03ne36
T
(°C)
mb
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
2
10
I
D
(A)
10
Limit R
120
I
der
(%)
80
40
0
0 50 100 150 200
I
D
der
--------------------
I
D25°C()
100 %×=
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
= V
DSon
/ I
DS
D
tp =
10 µs
03ne37
T
(°C)
mb
003aab281
100 µs
1
10
-1
-1
10
1 10 10
DC
1 ms
10 ms
2
VDS (V)
10
3
Tmb=25°C; IDM is single pulse; VGS=10V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PML260SN_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 29 May 2006 3 of 12
Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
R
th(j-a)
[1] Mounted on a printed-circuit board; vertical in still air.
thermal resistance from junction to mounting base see Figure 4 - - 2.5 K/W
thermal resistance from junction to ambient minimum footprint
[1]
- 60 - K/W
10
Z
th(j-mb)
(K/W)
1
10
δ =
0.5
0.2
0.1
0.05
0.02
-1
-5
10
single pul se
-4
10
-3
10
-2
10
-1
10
P
1 10
003aab280
δ =
t
p
T
t
(s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
t
p
T
t
PML260SN_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 29 May 2006 4 of 12
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