Philips PMEM4020PD Technical data
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ook, halfpage
M3D302
PMEM4020PD
PNP transistor/Schottky-diode
module
Product specification 2003 Nov 24
Philips Semiconductors Product specification
PNP transistor/Schottky-diode module PMEM4020PD
FEATURES
• 600 mW total power dissipation
• High current capability
• Reduces required PCB area
• Reduced pick and place costs
• Small plastic SMD package.
Transistor
• Low collector-emitter saturation voltage.
Diode
• Ultra high-speed switching
• Very low forward voltage
• Guard ring protected.
APPLICATIONS
• DC-to-DC converters
• Inductive load drivers
• General purpose load drivers
• Reverse polarity protection circuits.
PINNING
PIN DESCRIPTION
1 emitter
2 not connected
3 cathode
4 anode
5 base
6 collector
handbook, halfpage
132
Marking code: B7.
56
4
4
5
MGU868
Fig.1 Simplified outline (SOT457) and symbol.
3
6
1
DESCRIPTION
Combination of a PNP transistor with low V
CEsat
and high
current capability anda planar Schottky barrier diode with
an integrated guard ring for stress protection in a SOT457
(SC-74) small plastic package.
NPN complement: PMEM4020ND.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
PMEM4020PD − plastic surface mounted package; 6 leads SOT457
2003 Nov 24 2
Philips Semiconductors Product specification
PNP transistor/Schottky-diode module PMEM4020PD
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PNP transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
Schottky barrier diode
V
R
I
F
I
FSM
P
tot
T
j
Combined device
P
tot
T
stg
T
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−5V
collector current (DC) note 1 −−0.75 A
note 2 −−1A
note 3 −−1.3 A
T
≤ 55 °C; note 4 −−2A
s
peak collector current −−3A
peak base current −−1A
total power dissipation T
≤ 25 °C; note 1 − 295 mW
amb
T
≤ 25 °C; note 2 − 400 mW
amb
≤ 25 °C; note 3 − 500 mW
T
amb
T
≤ 55 °C; note 4 − 1000 mW
s
junction temperature − 150 °C
continuous reverse voltage − 20 V
continuous forward current − 1A
non-repetitive peak forward current t = 8.3 ms half sinewave; JEDEC
− 5A
method
total power dissipation T
≤ 25 °C; note 1 − 295 mW
amb
T
≤ 25 °C; note 2 − 400 mW
amb
T
≤ 25 °C; note 3 − 500 mW
amb
T
≤ 55 °C; note 4 − 1000 mW
s
junction temperature note 2 − 150 °C
total power dissipation T
=25°C; note 2 − 600 mW
amb
storage temperature −65 +150 °C
operating ambient temperature note 2 −65 +150 °C
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pads for collector and
cathode both 1 cm2.
3. Mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint.
4. Solder point of collector or cathode tab.
2003 Nov 24 3
Philips Semiconductors Product specification
PNP transistor/Schottky-diode module PMEM4020PD
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Single device
R
th(j-s)
R
th(j-a)
Combined device
R
th(j-a)
Notes
1. ForSchottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses
are a significant part of the total power losses. Nomograms for determination of the reverse power losses PRand
P
R
IF(AV) rating will be available on request.
2. Solder point of collector or cathode tab.
3. Device mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint.
4. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector and
cathode both 1 cm2.
5. Device mounted on a FR4 printed-circuit board, single-sided copper; tinplated; standard footprint for SOT457.
thermal resistance from junction to
solder point
thermal resistance from junction to
ambient
thermal resistance from junction to
ambient
in free air; notes 1 and 2 95 K/W
in free air; notes 1 and 3 250 K/W
in free air; notes 1 and 4 315 K/W
in free air; notes 1 and 5 425 K/W
in free air; notes 1 and 3 208 K/W
2003 Nov 24 4
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