Philips PMEM4010ND Technical data
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ook, halfpage
M3D302
PMEM4010ND
NPN transistor/Schottky diode
module
Product specification 2002 Oct 28
Philips Semiconductors Product specification
NPN transistor/Schottky diode module PMEM4010ND
FEATURES
• 600 mW total power dissipation
• High current capability
• Reduces required PCB area
• Reduced pick and place costs
• Small plastic SMD package.
Transistor:
• Low collector-emitter saturation voltage.
Diode:
• Ultra high-speed switching
• Very low forward voltage
• Guard ring protected.
APPLICATIONS
• DC/DC convertors
• Inductive load drivers
• General purpose load drivers
• Reverse polarity protection circuits.
PINNING
PIN DESCRIPTION
1 emitter
2 not connected
3 cathode
4 anode
5 base
6 collector
handbook, halfpage
132
Marking code: B3.
56
4
4
5
MGU865
3
6
1
DESCRIPTION
Combination ofan NPN transistor with low V
CEsat
and high
current capability and a planar Schottky barrier diode with
an integratedguard ring for stressprotection in a SOT457
(SC-74) small plastic package.
PNP complement: PMEM4010PD.
Fig.1 Simplified outline (SOT457) and symbol.
2002 Oct 28 2
Philips Semiconductors Product specification
NPN transistor/Schottky diode module PMEM4010ND
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
NPN transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
T
j
Schottky barrier diode
V
R
I
F
I
FSM
T
j
Combined device
P
tot
T
stg
T
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 2A
peak base current − 1A
junction temperature − 150 °C
continuous reverse voltage − 20 V
continuous forward current − 1A
non repetitive peak forward current t = 8.3 ms half sinewave;
− 5A
JEDEC method
junction temperature − 125 °C
total power dissipation T
≤ 25 °C; note 1 − 600 mW
amb
storage temperature −65 +150 °C
operating ambient temperature −65 +125 °C
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air; note 1 208 K/W
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
2
.
2002 Oct 28 3
Philips Semiconductors Product specification
NPN transistor/Schottky diode module PMEM4010ND
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
NPN transistor
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
BEsat
R
CEsat
V
BEon
f
T
C
c
Schottky barrier diode
V
F
I
R
C
d
collector-base cut-off current VCB=40V; IE=0 −−100 nA
V
=40V; IE= 0; T
CB
= 150 °C −−50 µA
amb
collector-emitter cut-off current VCE=30V; IB=0 −−100 nA
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=5V; IC=1mA 300 −−
V
=5V; IC= 500 mA 300 − 900
CE
V
=5V; IC=1A 200 −−
CE
collector-emitter saturation voltage IC= 100 mA; IB=1mA −−80 mV
I
= 500 mA; IB=50mA −−110 mV
C
I
= 1 A; IB= 100 mA −−190 mV
C
base-emitter saturation voltage IC= 1 A; IB= 100 mA −−1.2 V
equivalent on-resistance IC= 500 mA; IB= 50 mA; note 1 − 260 <220 mΩ
base-emitter turn-on voltage VCE=5V; IC=1A −−1.1 V
transition frequency IC= 50 mA; VCE=10V;
150 −−MHz
f = 100 MHz
collector capacitance VCB=10V; IE=Ie=0 ; f = 1 MHz −−10 pF
continuous forward voltage IF= 10 mA; note 1 − 240 270 mV
I
= 100 mA; note 1 − 300 350 mV
F
= 1000 mA; see Fig.7; note 1 − 480 550 mV
I
F
reverse current VR= 5 V; note 1 − 510µA
= 8 V; note 1 − 720µA
V
R
V
= 15 V; see Fig.8; note 1 − 10 50 µA
R
diode capacitance VR= 5 V; f = 1 MHz; see Fig.9 − 19 25 pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2002 Oct 28 4
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