Philips PMEM4010ND Technical data

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DATA SH EET

ook, halfpage

M3D302

PMEM4010ND

NPN transistor/Schottky diode
module

Product specification 2002 Oct 28

Philips Semiconductors Product specification

NPN transistor/Schottky diode module PMEM4010ND

FEATURES

• 600 mW total power dissipation

• High current capability

• Reduces required PCB area

• Reduced pick and place costs

• Small plastic SMD package.

Transistor:

• Low collector-emitter saturation voltage.

Diode:

• Ultra high-speed switching

• Very low forward voltage

• Guard ring protected.

APPLICATIONS

• DC/DC convertors

• Inductive load drivers

• General purpose load drivers

• Reverse polarity protection circuits.

PINNING

PIN DESCRIPTION

1 emitter
2 not connected
3 cathode
4 anode
5 base
6 collector

handbook, halfpage

132

Marking code: B3.

56

4

4

5

MGU865

3
6

1

DESCRIPTION

Combination ofan NPN transistor with low V

CEsat

and high
current capability and a planar Schottky barrier diode with
an integratedguard ring for stressprotection in a SOT457
(SC-74) small plastic package.
PNP complement: PMEM4010PD.

Fig.1 Simplified outline (SOT457) and symbol.

2002 Oct 28 2

Philips Semiconductors Product specification

NPN transistor/Schottky diode module PMEM4010ND

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

NPN transistor

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

T

j

Schottky barrier diode

V

R

I

F

I

FSM

T

j

Combined device

P

tot

T

stg

T

amb

collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 2A
peak base current − 1A
junction temperature − 150 °C

continuous reverse voltage − 20 V
continuous forward current − 1A
non repetitive peak forward current t = 8.3 ms half sinewave;

− 5A

JEDEC method

junction temperature − 125 °C

total power dissipation T

≤ 25 °C; note 1 − 600 mW

amb

storage temperature −65 +150 °C
operating ambient temperature −65 +125 °C

Note

1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air; note 1 208 K/W

Note

1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm

2

.

2

.

2002 Oct 28 3

Philips Semiconductors Product specification

NPN transistor/Schottky diode module PMEM4010ND

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

NPN transistor

I

CBO

I

CEO

I

EBO

h

FE

V

CEsat

V

BEsat

R

CEsat

V

BEon

f

T

C

c

Schottky barrier diode

V

F

I

R

C

d

collector-base cut-off current VCB=40V; IE=0 −−100 nA

V

=40V; IE= 0; T

CB

= 150 °C −−50 µA

amb

collector-emitter cut-off current VCE=30V; IB=0 −−100 nA
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=5V; IC=1mA 300 −−

V

=5V; IC= 500 mA 300 − 900

CE

V

=5V; IC=1A 200 −−

CE

collector-emitter saturation voltage IC= 100 mA; IB=1mA −−80 mV

I

= 500 mA; IB=50mA −−110 mV

C

I

= 1 A; IB= 100 mA −−190 mV

C

base-emitter saturation voltage IC= 1 A; IB= 100 mA −−1.2 V
equivalent on-resistance IC= 500 mA; IB= 50 mA; note 1 − 260 <220 mΩ
base-emitter turn-on voltage VCE=5V; IC=1A −−1.1 V
transition frequency IC= 50 mA; VCE=10V;

150 −−MHz

f = 100 MHz

collector capacitance VCB=10V; IE=Ie=0 ; f = 1 MHz −−10 pF

continuous forward voltage IF= 10 mA; note 1 − 240 270 mV

I

= 100 mA; note 1 − 300 350 mV

F

= 1000 mA; see Fig.7; note 1 − 480 550 mV

I

F

reverse current VR= 5 V; note 1 − 510µA

= 8 V; note 1 − 720µA

V

R

V

= 15 V; see Fig.8; note 1 − 10 50 µA

R

diode capacitance VR= 5 V; f = 1 MHz; see Fig.9 − 19 25 pF

Note

1. Pulse test: t

≤ 300 µs; δ≤0.02.

p

2002 Oct 28 4

Philips Semiconductors Product specification

NPN transistor/Schottky diode module PMEM4010ND

1000

handbook, halfpage

h

FE

800

(1)

MHC077

600

(2)

400

(3)

200

0

−1

10

110

2

10

10

3

IC (mA)

NPN transistor; VCE=5V.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.2 DC current gain as a function of collector

current; typical values.

10

MHC078

3

IC (mA)

4

10

10

handbook, halfpage

V

BE

(V)

1

−1

10

4

10

−1

10

(1)
(2)

(3)

110

2

10

NPN transistor; VCE=5V.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

3

10

handbook, halfpage

V

CEsat
(mV)

2

10

(1)

(2)
(3)

MHC079

10

1

110

2

10

10

3

IC (mA)

NPN transistor; IC/IB= 10.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

2

10

handbook, halfpage

R

CEsat

(Ω)

MHC080

10

1

(1)

(2)

−1

4

10

10

−1

10

110

(3)

10

3

IC (mA)

4

10

2

10

NPN transistor; IC/IB= 10.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.5 Equivalent on-resistance as a function of

collector current; typical values.

2002 Oct 28 5

Philips Semiconductors Product specification

NPN transistor/Schottky diode module PMEM4010ND

400

handbook, halfpage

f

T

(MHz)

300

200

100

0

200 400

0 1000

600 800

NPN transistor; VCE=10V.

Fig.6 Transition frequency as a function of

collector current.

MHC081

IC (mA)

3

10

handbook, halfpage

I

F

(mA)

2

10

10

(1) (2) (3)

MHC311

1

−1

10

VF (V)

Schottky barrier diode.

(1) T
(2) T
(3) T

amb
amb
amb

= 125 °C.
=85°C.
=25°C.

Fig.7 Forward current as a function of forward

voltage; typical values.

0.60.20 0.4

5

10

handbook, halfpage

I

R

(µA)

4

10

3

10

2

10

MHC312

(1)

(2)

(3)

10

1

20

VR (V)

Schottky barrier diode.

(1) T
(2) T
(3) T

amb
amb
amb

= 125 °C.
=85°C.
=25°C.

Fig.8 Reverse current as a function of reverse

voltage; typical values.

80

handbook, halfpage

C

d

(pF)

MHC313

60

40

20

250 51015

0

05

10 20

Schottky barrier diode; f = 1 MHz; T

amb

15

=25°C.

VR (V)

Fig.9 Diodecapacitance as a function of reverse

voltage; typical values.

2002 Oct 28 6

Philips Semiconductors Product specification

NPN transistor/Schottky diode module PMEM4010ND

APPLICATION INFORMATION

handbook, halfpage

V

in

CONTROLLER

Fig.10 DC/DC convertor.

V

out

MGU863

handbook, halfpage

IN

V

MGU864

CC

Fig.11 Inductive load driver (relays, motors,

buzzers) with free-wheeling diode.

2002 Oct 28 7

Philips Semiconductors Product specification

NPN transistor/Schottky diode module PMEM4010ND

PACKAGE OUTLINE

Plastic surface mounted package; 6 leads SOT457

D

y

56

pin 1
index

4

A

A

1

E

H

E

Q

AB

c

X

v M

A

132

L

p

e

b

p

wBM

detail X

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

A

1.1

mm

OUTLINE
VERSION

SOT457 SC-74

0.9

0.013

0.1

b

cD

p

1

0.40

0.26

0.25

0.10

IEC JEDEC EIAJ

3.1

2.7

E

1.7

1.3

REFERENCES

e

0.95

H

E

3.0

2.5

2002 Oct 28 8

L

Qywv

p

0.6

0.33

0.2

0.23

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
01-05-04

Philips Semiconductors Product specification

NPN transistor/Schottky diode module PMEM4010ND

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describingmultiple typenumbers, the highest-levelproduct statusdetermines the data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting valuesdefinition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese oratany otherconditionsabove thosegivenin the
Characteristics sectionsof the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation or warrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to resultin personalinjury. Philips
Semiconductorscustomers using orsellingthese products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When theproduct isin fullproduction
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2002 Oct 28 9

Philips Semiconductors Product specification

NPN transistor/Schottky diode module PMEM4010ND

NOTES

2002 Oct 28 10

Philips Semiconductors Product specification

NPN transistor/Schottky diode module PMEM4010ND

NOTES

2002 Oct 28 11

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to beaccurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613514/01/pp12 Date of release: 2002 Oct 28 Document order number: 9397 750 10212

SCA74