Philips PMEM1505PG Technical data

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PMEM1505PG

PNP transistor/Schottky rectiﬁer module

Rev. 01 — 26 May 2004 Product data sheet

1. Product proﬁle

1.1 General description

Combination of an PNP transistor with low V

and high current capability and a planar

CEsat

Schottky barrier rectiﬁer with an integrated guard ring for stress protection in a SOT353 (SC-88A) small plastic package. NPN complement: PMEM1505NG.

1.2 Features

■ 300 mW total power dissipation

■ Current capability up to 0.5 A

■ Reduces printed-circuit board area required

■ Reduces pick and place costs

■ Small plastic SMD package

■ Transistor

◆ Low collector-emitter saturation voltage.

■ Diode

◆ Ultra high-speed switching

◆ Very low forward voltage

◆ Guard ring protected.

1.3 Applications

■ DC-to-DC converters

■ Inductive load drivers

■ General purpose load drivers

■ Reverse polarity protection circuits

■ MOSFET drivers.

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

PNP transistor

CEO

Schottky barrier rectiﬁer

[1] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.

collector-emitter voltage open base - - −15 V collector current (DC) continuous

continuous reverse voltage - - 20 V continuous forward current - - 0.5 A

[1]

--−0.5 A

Philips Semiconductors

PMEM1505PG

PNP transistor/Schottky rectiﬁer module

2. Pinning information

Table 2: Discrete pinning

Pin Description Simpliﬁed outline Symbol

1 anode

5 cathode 4 collector 2 base

3 emitter

Top view

sym024

3. Ordering information

Table 3: Ordering information

Type number Package

Name Description Version

PMEM1505PG - plastic surface mounted package; 5 leads SOT353

4. Marking

Table 4: Marking

Type number Marking code

PMEM1505PG L6*

[1] * = p: made in Hong Kong.

* = t: made in Malaysia. * = W: made in China.

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

PNP transistor

CBO

CEO

EBO

[1]

collector-base voltage open emitter - −15 V collector-emitter voltage open base - −15 V emitter-base voltage open collector - −6V collector current (DC) continuous

continuous continuous;

≤ 55 °C

[1]

- −0.5 A

[2]

- −0.6 A

[3]

- −1A

peak collector current - −1A peak base current - −100 mA

Product data sheet Rev. 01 — 26 May 2004 2 of 11

Philips Semiconductors

PMEM1505PG

PNP transistor/Schottky rectiﬁer module

Table 5: Limiting values

…continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

tot

total power dissipation T

amb

≤ 25 °C ≤ 25 °C

≤ 55 °C

junction temperature - 150 °C

[1]

- 200 mW

[2]

- 250 mW

[3]

- 800 mW

Schottky barrier rectiﬁer

V I

FSM

tot

continuous reverse voltage - 20 V continuous forward current - 0.5 A non-repetitive peak forward

current total power dissipation T

junction temperature

t = 8.3 ms square wave

≤ 25 °C

amb

≤ 25 °C

amb

≤ 55 °C

-5A

[1]

- 200 mW

[2]

- 250 mW

[3]

- 800 mW

[2]

- 125 °C

Combined device

tot

stg

amb

total power dissipation T storage temperature −65 +150 °C operating ambient

amb

≤ 25 °C

[2]

- 300 mW

[2]

−65 +150 °C

temperature

[1] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353. [2] Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm2 mounting pad for both

collector and cathode.

[3] Solder point of collector or cathode tab.

6. Thermal characteristics

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

Single device

th(j-s)

th(j-a)

Combined device

th(j-a)

[1] For Schottky barrier rectiﬁers thermal run-away has to be considered, as in some applications the reverse

power losses PR are a signiﬁcant part of the total power losses. Nomograms for determining the reverse

power losses PR and I [2] Solder point of collector or cathode tab. [3] Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm2 mounting pad for both

collector and cathode. [4] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353. [5] Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.

from junction to solder point in free air from junction to ambient in free air

from junction to ambient in free air

[1]

rating will be available on request.

F(AV)

[2]

120 K/W

[3]

395 K/W

[4]

495 K/W

[5]

410 K/W

Product data sheet Rev. 01 — 26 May 2004 3 of 11

Philips Semiconductors

PMEM1505PG

PNP transistor/Schottky rectiﬁer module

7. Characteristics

Table 7: Characteristics

=25°C unless otherwise speciﬁed.

amb

Symbol Parameter Conditions Min Typ Max Unit

PNP transistor

CBO

collector-base cut-off current

EBO

emitter-base cut-off current

CEsat

DC current gain VCE= −2 V; IC= −10 mA 200 - -

collector-emitter saturation voltage

CEsat

equivalent on-resistance

BEsat

base-emitter saturation voltage

BEon

base-emitter turn-on voltage

transition frequency VCE= −10 V; IC= −50 mA;

collector capacitance VCB= −10 V; IE=Ie=0A;

Schottky barrier rectiﬁer

continuous forward voltage

reverse current see Figure 2

diode capacitance VR= 5 V; f = 1 MHz; see

VCB= −15 V; IE=0A - - −100 nA

= −15 V; IE=0A;

= 150 °C

--−50 µA

VEB= −5 V; IC=0A - - −100 nA

= −2 V; IC= −100 mA 150 - -

= −2 V; IC= −500 mA 90 - -

IC= −10 mA; IB= −0.5 mA

= −200 mA; IB= −10 mA - - −150 mV

= −500 mA; IB= −50 mA - - −250 mV

IC= −500 mA; IB= −50 mA

VCE= −2 V; IC= −100 mA

[1]

--−25 mV

[1]

- 300 < 500 mΩ

[1]

--−1.1 V

[1]

--−0.9 V

[1]

100 280 - MHz

f = 100 MHz

- 4.4 10 pF

f=1MHz

see Figure 1

=10mA

= 100 mA

= 500 mA

= 1000 mA

=5V

=8V

=15V

[1]

- 240 270 mV

[1]

- 300 350 mV

[1]

- 400 460 mV

[1]

- 480 550 mV

[1]

-510µA

[1]

-720µA

[1]

-1050µA

- 1925pF

Figure 3

[1] Pulse test: tp≤ 300 µs; δ≤0.02.

Product data sheet Rev. 01 — 26 May 2004 4 of 11

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