Philips PMEM1505PG Technical data

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PMEM1505PG

PNP transistor/Schottky rectifier module

Rev. 01 — 26 May 2004 Product data sheet

1. Product profile

1.1 General description

Combination of an PNP transistor with low V

and high current capability and a planar

CEsat

Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT353
(SC-88A) small plastic package. NPN complement: PMEM1505NG.

1.2 Features

■ 300 mW total power dissipation

■ Current capability up to 0.5 A

■ Reduces printed-circuit board area required

■ Reduces pick and place costs

■ Small plastic SMD package

■ Transistor

◆ Low collector-emitter saturation voltage.

■ Diode

◆ Ultra high-speed switching

◆ Very low forward voltage

◆ Guard ring protected.

1.3 Applications

■ DC-to-DC converters

■ Inductive load drivers

■ General purpose load drivers

■ Reverse polarity protection circuits

■ MOSFET drivers.

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

PNP transistor

V

CEO

I

C

Schottky barrier rectifier

V

R

I

F

[1] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.

collector-emitter voltage open base - - −15 V
collector current (DC) continuous

continuous reverse voltage - - 20 V
continuous forward current - - 0.5 A

[1]

--−0.5 A

Philips Semiconductors

PMEM1505PG

PNP transistor/Schottky rectifier module

2. Pinning information

Table 2: Discrete pinning

Pin Description Simplified outline Symbol

1 anode

3

2

5 cathode
4 collector
2 base

1

2

3

5

4

1

3 emitter

Top view

45

sym024

3. Ordering information

Table 3: Ordering information

Type number Package

Name Description Version

PMEM1505PG - plastic surface mounted package; 5 leads SOT353

4. Marking

Table 4: Marking

Type number Marking code

PMEM1505PG L6*

[1] * = p: made in Hong Kong.

* = t: made in Malaysia.
* = W: made in China.

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

PNP transistor

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

[1]

collector-base voltage open emitter - −15 V
collector-emitter voltage open base - −15 V
emitter-base voltage open collector - −6V
collector current (DC) continuous

continuous
continuous;

≤ 55 °C

T

s

[1]

- −0.5 A

[2]

- −0.6 A

[3]

- −1A

peak collector current - −1A
peak base current - −100 mA

9397 750 12751 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 01 — 26 May 2004 2 of 11

Philips Semiconductors

PMEM1505PG

PNP transistor/Schottky rectifier module

Table 5: Limiting values

…continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

P

tot

T

j

total power dissipation T

amb

T

amb

T

s

≤ 25 °C
≤ 25 °C

≤ 55 °C

junction temperature - 150 °C

[1]

- 200 mW

[2]

- 250 mW

[3]

- 800 mW

Schottky barrier rectifier

V
I

F

I

FSM

P

T

R

tot

j

continuous reverse voltage - 20 V
continuous forward current - 0.5 A
non-repetitive peak forward

current
total power dissipation T

junction temperature

t = 8.3 ms
square wave

≤ 25 °C

amb

≤ 25 °C

T

amb

≤ 55 °C

T

s

-5A

[1]

- 200 mW

[2]

- 250 mW

[3]

- 800 mW

[2]

- 125 °C

Combined device

P

tot

T

stg

T

amb

total power dissipation T
storage temperature −65 +150 °C
operating ambient

amb

≤ 25 °C

[2]

- 300 mW

[2]

−65 +150 °C

temperature

[1] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.
[2] Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm2 mounting pad for both

collector and cathode.

[3] Solder point of collector or cathode tab.

6. Thermal characteristics

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

Single device

R

th(j-s)

R

th(j-a)

Combined device

R

th(j-a)

[1] For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses. Nomograms for determining the reverse

power losses PR and I
[2] Solder point of collector or cathode tab.
[3] Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm2 mounting pad for both

collector and cathode.
[4] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.
[5] Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.

from junction to solder point in free air
from junction to ambient in free air

from junction to ambient in free air

[1]

rating will be available on request.

F(AV)

[2]

120 K/W

[3]

395 K/W

[4]

495 K/W

[5]

410 K/W

9397 750 12751 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 01 — 26 May 2004 3 of 11

Philips Semiconductors

PMEM1505PG

PNP transistor/Schottky rectifier module

7. Characteristics

Table 7: Characteristics

T

=25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

PNP transistor

I

CBO

collector-base cut-off
current

I

EBO

emitter-base cut-off
current

h

V

FE

CEsat

DC current gain VCE= −2 V; IC= −10 mA 200 - -

collector-emitter
saturation voltage

R

CEsat

equivalent
on-resistance

V

BEsat

base-emitter
saturation voltage

V

BEon

base-emitter turn-on
voltage

f

T

C

c

transition frequency VCE= −10 V; IC= −50 mA;

collector capacitance VCB= −10 V; IE=Ie=0A;

Schottky barrier rectifier

V

F

continuous forward
voltage

I

R

C

d

reverse current see Figure 2

diode capacitance VR= 5 V; f = 1 MHz; see

VCB= −15 V; IE=0A - - −100 nA

= −15 V; IE=0A;

V

CB

T

= 150 °C

j

--−50 µA

VEB= −5 V; IC=0A - - −100 nA

= −2 V; IC= −100 mA 150 - -

V

CE

= −2 V; IC= −500 mA 90 - -

V

CE

IC= −10 mA; IB= −0.5 mA

= −200 mA; IB= −10 mA - - −150 mV

I

C

= −500 mA; IB= −50 mA - - −250 mV

I

C

IC= −500 mA; IB= −50 mA

IC= −500 mA; IB= −50 mA

VCE= −2 V; IC= −100 mA

[1]

--−25 mV

[1]

- 300 < 500 mΩ

[1]

--−1.1 V

[1]

--−0.9 V

[1]

100 280 - MHz

f = 100 MHz

- 4.4 10 pF

f=1MHz

see Figure 1

=10mA

I

F

= 100 mA

I

F

= 500 mA

I

F

= 1000 mA

I

F

=5V

V

R

=8V

V

R

=15V

V

R

[1]

- 240 270 mV

[1]

- 300 350 mV

[1]

- 400 460 mV

[1]

- 480 550 mV

[1]

-510µA

[1]

-720µA

[1]

-1050µA

- 1925pF

Figure 3

[1] Pulse test: tp≤ 300 µs; δ≤0.02.

9397 750 12751 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 01 — 26 May 2004 4 of 11

Philips Semiconductors

PMEM1505PG

PNP transistor/Schottky rectifier module

001aaa479

(V)

V

F

I

F

(mA)

10

10

3

2

10

1

0 0.50.40.2 0.30.1

(1) (2) (3)

Schottky barrier rectifier.
(1) T
(2) T
(3) T

amb
amb
amb

= 125 °C.
=85°C.
=25°C.

Fig 1. Forward current as a function of forward

voltage; typical values.

001aaa480

(V)

V

R

I

R

(µA)

5

10

4

10

3

10

2

10

10

1

0252010 155

(1)

(2)

(3)

Schottky barrier rectifier.
(1) T
(2) T
(3) T

amb
amb
amb

= 125 °C.
=85°C.
=25°C.

Fig 2. Reverse current as a function of reverse

voltage; typical values.

80

C

d

(pF)

60

40

20

0

02015510

Schottky barrier rectifier; f = 1 MHz; T

001aaa481

VR (V)

=25°C. PNP transistor; VCE= −2V.

amb

Fig 3. Diode capacitance as a function of reverse

voltage; typical values.

−10

001aaa486

2

I

(mA)

C

−10

600

h

FE

400

200

−10

(1) T
(2) T
(3) T

0

−1

amb
amb
amb

(1)

(2)

(3)

−1 −10

= 150 °C.
=25°C.
= −55 °C.

Fig 4. DC current gain as a function of collector

current; typical values.

3

9397 750 12751 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 01 — 26 May 2004 5 of 11

Philips Semiconductors

PMEM1505PG

PNP transistor/Schottky rectifier module

−10

001aaa487

2

I

(mA)

C

−10

3

V

−1.1

BE

(V)

−0.9

−0.7

−0.5

−0.3

−0.1

−10

(1)

(2)

(3)

−1

−1 −10

PNP transistor; VCE= −2V.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig 5. Base-emitter voltage as a function of collector

current; typical values.

(1)

(2)
(3)

−10

001aaa488

2

(mA)

I

C

−10

V

(mV)

−10

CEsat

−10

−10

−1

3

2

−10

−1

−1 −10

PNP transistor; IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig 6. Collector-emitter saturation voltage as a

function of collector current; typical values.

3

−10

001aaa489

(1)

(2)
(3)

2

IC (mA)

−10

3

R

10

CEsat

(Ω)

10

10

10

−1

−10

3

2

1

−1

−1 −10

PNP transistor; VCE= −2V.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig 7. Equivalent on-resistance as a function of collector current; typical values.

9397 750 12751 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 01 — 26 May 2004 6 of 11

Philips Semiconductors

8. Application information

V

IN

CONTROLLER

PMEM1505PG

PNP transistor/Schottky rectifier module

V

CC

V

OUT

IN

mgu866

mgu867

Fig 8. DC-to-DC converter. Fig 9. Inductive load driver (relays, motors and

buzzers) with free-wheeling diode.

9397 750 12751 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 01 — 26 May 2004 7 of 11

Philips Semiconductors

PMEM1505PG

PNP transistor/Schottky rectifier module

9. Package outline

Plastic surface mounted package; 5 leads SOT353

D

y

132

e

1

e

E

H

E

AB

X

v M

A

45

Q

A

A

1

b

p

wBM

L

detail X

c

p

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

A

1.1

0.8

OUTLINE

VERSION

SOT353

max

0.1

1

b

cD

p

0.30

0.25

0.20

0.10

IEC JEDEC EIAJ

2.2

1.8

(2)

E

1.35

1.3

1.15

REFERENCES

e

H

L

0.45

0.15

Qywv

p

0.25

0.15

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28SC-88A

e

0.65

E

1

2.2

2.0

Fig 10. Package outline.

9397 750 12751 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 01 — 26 May 2004 8 of 11

Philips Semiconductors

PNP transistor/Schottky rectifier module

PMEM1505PG

10. Revision history

Table 8: Revision history

Document ID Release date Data sheet status Change notice Order number Supersedes

PMEM1505PG_1 20040526 Product data - 9397 750 12751 -

9397 750 12751 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 01 — 26 May 2004 9 of 11

Philips Semiconductors

11. Data sheet status

PMEM1505PG

PNP transistor/Schottky rectifier module

Level Data sheet status

I Objective data Development This data sheet contains data from the objective specification for product development. Philips

II Preliminary data Qualification Thisdatasheet contains data from the preliminary specification. Supplementary data will bepublished

III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

12. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.

[2] [3]

Definition

Semiconductors reserves the right to change the specification in any manner without notice.

at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.

right to make changes at any time in order to improve the design, manufacturing and supply.Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, andmakes no representations orwarrantiesthat these products are
free from patent,copyright,or mask work right infringement, unless otherwise
specified.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [e-mail]

9397 750 12751 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 01 — 26 May 2004 10 of 11

Philips Semiconductors

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Application information. . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10

12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

14 Contact information . . . . . . . . . . . . . . . . . . . . 10

PMEM1505PG

PNP transistor/Schottky rectifier module

© Koninklijke Philips Electronics N.V. 2004

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.

Document order number: 9397 750 12751

Published in The Netherlands

Date of release: 26 May 2004