Philips PMEGxx10EH, PMEGxx10EJ Technical data
查询PMEG2010EH供应商
PMEGxx10EH/EJ series
1 A very low VF MEGA Schottky barrier rectifiers
Rev. 03 — 11 April 2005 Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers.
Table 1: Product overview
Type number Package Configuration
PMEG2010EH SOD123F - single diode
PMEG3010EH
PMEG4010EH
PMEG2010EJ SOD323F SC-90 single diode
PMEG3010EJ
PMEG4010EJ
Philips JEITA
1.2 Features
■ Forward current: ≤ 1A ■ Very low forward voltage
1.3 Applications
■ Low voltage rectification ■ Inverse polarity protection
■ High efficiency DC-to-DC conversion ■ Low power consumption applications
1.4 Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
I
F
V
R
V
F
forward current Tsp≤ 55 °C--1A
reverse voltage
PMEG2010EH, PMEG2010EJ - - 20 V
PMEG3010EH, PMEG3010EJ - - 30 V
PMEG4010EH, PMEG4010EJ - - 40 V
forward voltage IF= 1000 mA
PMEG2010EH, PMEG2010EJ - 420 500 mV
PMEG3010EH, PMEG3010EJ - 450 560 mV
PMEG4010EH, PMEG4010EJ - 540 640 mV
[1]
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
Philips Semiconductors
2. Pinning information
Table 3: Pinning
Pin Description Simplified outline Symbol
1 cathode
2 anode
[1] The marking bar indicates the cathode.
3. Ordering information
Table 4: Ordering information
Type number Package
PMEG2010EH - plastic surface mounted package; 2 leads SOD123F
PMEG3010EH
PMEG4010EH
PMEG2010EJ SC-90 plastic surface mounted package; 2 leads SOD323F
PMEG3010EJ
PMEG4010EJ
PMEGxx10EH/EJ series
1 A very low VF MEGA Schottky barrier rectifiers
[1]
12
12
sym001
001aab540
Name Description Version
4. Marking
Table 5: Marking codes
Type number Marking code
PMEG2010EH A9
PMEG3010EH AA
PMEG4010EH AB
PMEG2010EJ AH
PMEG3010EJ AK
PMEG4010EJ AL
9397 750 14817 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 11 April 2005 2 of 12
Philips Semiconductors
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
I
F
I
FRM
I
FSM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
PMEGxx10EH/EJ series
1 A very low VF MEGA Schottky barrier rectifiers
reverse voltage
PMEG2010EH, PMEG2010EJ - 20 V
PMEG3010EH, PMEG3010EJ - 30 V
PMEG4010EH, PMEG4010EJ - 40 V
forward current Tsp≤ 55 °C-1A
repetitive peak forward current tp≤ 1 ms; δ≤0.25 - 7 A
non-repetitive peak forward current square wave;
t
=8ms
p
total power dissipation T
amb
≤ 25 °C
SOD123F
SOD323F
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
-9A
[1]
- 375 mW
[2]
- 830 mW
[1]
- 350 mW
[2]
- 830 mW
6. Thermal characteristics
Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction
in free air
to ambient
SOD123F
SOD323F
R
th(j-sp)
thermal resistance from junction
to solder point
SOD123F - - 60 K/W
SOD323F - - 55 K/W
[1] Schottky barrier rectifier thermal run-away has to beconsidered,as in some applications the reverse power
losses PR are a significant part of the total power losses. Nomograms for determining the reverse power
losses PR and I
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
9397 750 14817 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 11 April 2005 3 of 12
rating are available on request.
F(AV)
[1]
[2]
- - 330 K/W
[3]
- - 150 K/W
[2]
- - 350 K/W
[3]
- - 150 K/W
Philips Semiconductors
7. Characteristics
Table 8: Characteristics
T
=25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
V
F
I
R
C
d
PMEGxx10EH/EJ series
1 A very low VF MEGA Schottky barrier rectifiers
forward voltage
PMEG2010EH, PMEG2010EJ IF= 0.1 mA - 90 130 mV
= 1 mA - 150 190 mV
I
F
= 10 mA - 210 240 mV
I
F
= 100 mA - 280 330 mV
I
F
= 500 mA - 355 390 mV
I
F
= 1000 mA - 420 500 mV
I
F
PMEG3010EH, PMEG3010EJ I
PMEG4010EH, PMEG4010EJ I
= 0.1 mA - 90 130 mV
F
= 1 mA - 150 200 mV
I
F
= 10 mA - 215 250 mV
I
F
= 100 mA - 285 340 mV
I
F
= 500 mA - 380 430 mV
I
F
= 1000 mA - 450 560 mV
I
F
= 0.1 mA - 95 130 mV
F
= 1 mA - 155 210 mV
I
F
= 10 mA - 220 270 mV
I
F
= 100 mA - 295 350 mV
I
F
= 500 mA - 420 470 mV
I
F
= 1000 mA - 540 640 mV
I
F
reverse current
PMEG2010EH, PMEG2010EJ V
PMEG3010EH, PMEG3010EJ V
PMEG4010EH, PMEG4010EJ V
=10V - 15 40 µA
R
= 20 V - 40 200 µA
V
R
=10V - 12 30 µA
R
= 30 V - 40 150 µA
V
R
=10V - 7 20 µA
R
= 40 V - 30 100 µA
V
R
diode capacitance VR=1V;
f=1MHz
PMEG2010EH, PMEG2010EJ - 66 80 pF
PMEG3010EH, PMEG3010EJ - 55 70 pF
PMEG4010EH, PMEG4010EJ - 43 50 pF
[1]
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
9397 750 14817 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 11 April 2005 4 of 12
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