Philips PMEG6010AED Technical data
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M3D302
PMEG6010AED
Low V
(MEGA) Schottky barrier
F
diode
Product specification 2003 Jun 27
Philips Semiconductors Product specification
Low VF(MEGA) Schottky barrier diode
FEATURES
• Low switching losses
• Very high surge current absorption capability
• Fast recovery time
• Guard ring protected
• Plastic SMD package.
APPLICATIONS
• Low power switched-mode power supplies
• Rectification
• Polarity protection.
GENERAL DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOT457
(SC-74) small plastic package.
PINNING
PIN DESCRIPTION
handbook, halfpage
1 cathode
2 cathode
3 anode
4 anode
5 cathode
6 cathode
4
56
132
PMEG6010AED
1, 2
5, 6
3, 4
MHC634
Marking code: M4.
Fig.1 Simplified outline SOT457 (SC-74) and
symbol.
LIMITING VALUES
In accordance with Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
I
FSM
I
RSM
T
stg
T
j
continuous reverse voltage − 60 V
continuous forward current T
≤ 25 °C; note 1 − 1A
amb
non-repetitive peak forward current t = 8 ms; square wave − 17.5 A
non-repetitive peak reverse current tp= 100 µs − 0.5 A
storage temperature −65 +150 °C
junction temperature − +150 °C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for cathode 6 cm
2
.
2003 Jun 27 2
Philips Semiconductors Product specification
Low VF(MEGA) Schottky barrier diode
PMEG6010AED
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
continuous forward voltage IF= 0.1 A 400 mV
I
= 1 A 650 mV
F
continuous reverse current VR= 60 V; see Fig.3 350 µA
= 60 V; Tj= 100 °C;
V
R
8mA
notes 1 and 2
C
d
diode capacitance VR= 4 V; f = 1 MHz; see Fig.4 60 pF
Notes
1. Pulse test: t
= 300 µs; δ = 0.02.
p
2. ForSchottkybarrierdiodesthermalrunawayhastobeconsidered,asinsomeapplications,thereversepowerlosses
are a significant part of the total power losses.
P
R
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air; note 1 230 K/W
in free air; note 2 180 K/W
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for cathode 1 cm2.
2. Device mounted on a printed-circuit board, single-sided copper; tinplated, mounting pad for cathode 6 cm2.
2003 Jun 27 3
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