Philips PMEG3020EH, PMEG3020EJ Technical data
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PMEG3020EH; PMEG3020EJ
30 V, 2 A ultra low VF MEGA Schottky barrier rectifiers
Rev. 03 — 31 May 2005 Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection encapsulated in small SMD plastic packages.
Table 1: Product overview
Type number Package Configuration
PMEG3020EH SOD123F - single isolated diodes
PMEG3020EJ SOD323F SC-90 single isolated diodes
Philips JEITA
1.2 Features
■ Forward current: 2 A
■ Reverse voltage: 30 V
■ Ultra low forward voltage
■ Small and flat lead SMD package
1.3 Applications
■ Low voltage rectification
■ High efficiency DC-to-DC conversion
■ Switched-mode power supply
■ Inverse polarity protection
■ Low power consumption applications
1.4 Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
I
F
V
R
V
F
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
forward current Tsp≤ 55 °C --2A
reverse voltage - - 30 V
forward voltage IF= 2000 mA
[1]
- 510 620 mV
Philips Semiconductors
2. Pinning information
Table 3: Pinning
Pin Description Simplified outline Symbol
1 cathode
2 anode
[1] The marking bar indicates the cathode.
3. Ordering information
Table 4: Ordering information
Type number Package
PMEG3020EH - plastic surface mounted package; 2 leads SOD123F
PMEG3020EJ SC-90 plastic surface mounted package; 2 leads SOD323F
PMEG3020EH; PMEG3020EJ
30 V, 2 A ultra low VF MEGA Schottky barrier rectifiers
[1]
12
12
sym001
001aab540
Name Description Version
4. Marking
Table 5: Marking codes
Type number Marking code
PMEG3020EH A7
PMEG3020EJ E9
9397 750 15077 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 31 May 2005 2 of 9
Philips Semiconductors
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
I
F
I
FRM
I
FSM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
PMEG3020EH; PMEG3020EJ
30 V, 2 A ultra low VF MEGA Schottky barrier rectifiers
reverse voltage - 30 V
forward current Tsp≤ 55 °C-2A
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation T
PMEG3020EH
PMEG3020EJ
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
tp≤ 1 ms; δ≤0.25 - 4.5 A
t = 8 ms; square
[1]
-9A
wave
≤ 25 °C
amb
[1]
- 375 mW
[2]
- 830 mW
[1]
- 360 mW
[2]
- 830 mW
6. Thermal characteristics
Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
R
th(j-sp)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and I
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
thermal resistance from
junction to ambient
PMEG3020EH
PMEG3020EJ
thermal resistance from
junction to solder point
PMEG3020EH - - 60 K/W
PMEG3020EJ - - 55 K/W
in free air
rating will be available on request.
F(AV)
[1] [2]
- - 330 K/W
[2] [3]
- - 150 K/W
[1] [2]
- - 350 K/W
[2] [3]
- - 150 K/W
9397 750 15077 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 31 May 2005 3 of 9
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