Philips PMEG3015EV Technical data

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PMEG3015EV

30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier in
SOT666 package

Rev. 01 — 4 April 2005 Product data sheet

1. Product profile

1.1 General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in an ultra small SMD SOT666
plastic package.

1.2 Features

■ Forward current: 1.5 A

■ Reverse voltage: 30 V

■ Ultra low forward voltage

■ Ultra small SMD packages

1.3 Applications

■ Low voltage rectification

■ High efficiency DC-to-DC conversion

■ Voltage clamping

■ Inverse polarity protection

■ Low power consumption applications

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

I

F

V

R

V

F

[1] Pulse test: tp≤ 300µs; δ≤0.02.

forward current Tsp≤ 55 °C - - 1.5 A
reverse voltage - - 30 V
forward voltage IF= 1.5 A

[1]

- 480 550 mV

Philips Semiconductors

2. Pinning information

Table 2: Pinning

Pin Description Simplified outline Symbol

1 cathode
2 cathode
3 anode
4 anode
5 cathode
6 cathode

3. Ordering information

Table 3: Ordering information

Type number Package

PMEG3015EV - plastic surface mounted package; 6 leads SOT666

PMEG3015EV

30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier

456

123

Name Description Version

1, 2
5, 6

3, 4

sym038

4. Marking

Table 4: Marking codes

Type number Marking code

PMEG3015EV 1A

9397 750 14638 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 4 April 2005 2 of 10

Philips Semiconductors

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

R

I

F

I

FRM

I

FSM

P

tot

T

j

T

amb

T

stg

[1] For SOT666 only valid, if pins 3 and 4 are connected in parallel.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for cathode 1 cm2.

PMEG3015EV

30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier

reverse voltage - 30 V
forward current Tsp≤ 55 °C - 1.5 A
repetitive peak forward current tp≤ 1 ms; δ≤0.25
non-repetitive peak forward

current
total power dissipation T

tp= 8 ms; square
wave

≤ 25 °C

amb

junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

[1]

- 4.5 A

[1]

- 9.5 A

[2]

- 0.31 W

[3]

- 0.58 W

6. Thermal characteristics

Table 6: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

R

th(j-sp)

[1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses. Nomograms for determining the reverse

power losses PR and I
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for cathode 1 cm2.

thermal resistance fromjunction
to ambient

thermal resistance fromjunction
to solder point

in free air

rating will be available on request.

F(AV)

[1] [2]

[3]

- - 405 K/W

[4]

- - 215 K/W

--80K/W

9397 750 14638 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 4 April 2005 3 of 10