Philips PMEG3015EV Technical data

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PMEG3015EV

30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier in
SOT666 package

Rev. 01 — 4 April 2005 Product data sheet

1. Product profile

1.1 General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in an ultra small SMD SOT666
plastic package.

1.2 Features

■ Forward current: 1.5 A

■ Reverse voltage: 30 V

■ Ultra low forward voltage

■ Ultra small SMD packages

1.3 Applications

■ Low voltage rectification

■ High efficiency DC-to-DC conversion

■ Voltage clamping

■ Inverse polarity protection

■ Low power consumption applications

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

I

F

V

R

V

F

[1] Pulse test: tp≤ 300µs; δ≤0.02.

forward current Tsp≤ 55 °C - - 1.5 A
reverse voltage - - 30 V
forward voltage IF= 1.5 A

[1]

- 480 550 mV

Philips Semiconductors

2. Pinning information

Table 2: Pinning

Pin Description Simplified outline Symbol

1 cathode
2 cathode
3 anode
4 anode
5 cathode
6 cathode

3. Ordering information

Table 3: Ordering information

Type number Package

PMEG3015EV - plastic surface mounted package; 6 leads SOT666

PMEG3015EV

30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier

456

123

Name Description Version

1, 2
5, 6

3, 4

sym038

4. Marking

Table 4: Marking codes

Type number Marking code

PMEG3015EV 1A

9397 750 14638 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 4 April 2005 2 of 10

Philips Semiconductors

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

R

I

F

I

FRM

I

FSM

P

tot

T

j

T

amb

T

stg

[1] For SOT666 only valid, if pins 3 and 4 are connected in parallel.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for cathode 1 cm2.

PMEG3015EV

30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier

reverse voltage - 30 V
forward current Tsp≤ 55 °C - 1.5 A
repetitive peak forward current tp≤ 1 ms; δ≤0.25
non-repetitive peak forward

current
total power dissipation T

tp= 8 ms; square
wave

≤ 25 °C

amb

junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

[1]

- 4.5 A

[1]

- 9.5 A

[2]

- 0.31 W

[3]

- 0.58 W

6. Thermal characteristics

Table 6: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

R

th(j-sp)

[1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses. Nomograms for determining the reverse

power losses PR and I
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for cathode 1 cm2.

thermal resistance fromjunction
to ambient

thermal resistance fromjunction
to solder point

in free air

rating will be available on request.

F(AV)

[1] [2]

[3]

- - 405 K/W

[4]

- - 215 K/W

--80K/W

9397 750 14638 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 4 April 2005 3 of 10

Philips Semiconductors

7. Characteristics

Table 7: Characteristics

T

=25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

V

F

I

R

C

d

[1] Pulse test: tp≤ 300 µs; δ≤0.02.

PMEG3015EV

30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier

forward voltage IF= 1 mA

= 10 mA

I

F

= 100 mA

I

F

= 500 mA

I

F

=1 A

I

F

= 1.5 A

I

F

reverse current VR= 10 V - 60 150 µA

= 30 V - 400 1000 µA

V

R

diode capacitance VR= 1 V; f = 1 MHz - 60 72 pF

[1]

- 125 160 mV

[1]

- 185 220 mV

[1]

- 255 290 mV

[1]

- 340 380 mV

[1]

- 410 480 mV

[1]

- 480 550 mV

9397 750 14638 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 4 April 2005 4 of 10

Philips Semiconductors

PMEG3015EV

30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier

4

10

I

F

(mA)

3

10

2

10

10

1

−1

10

0 0.60.40.2

(1) T

amb

(2) T

amb

(3) T

amb

(4) T

amb

(5) T

amb

(5)

(4) (3) (1)(2)

= −40 °C
=25°C
=85°C
= 125 °C
= 150 °C

006aaa079

VF (V)

Fig 1. Forward current as a function of forward

voltage; typical values

I

R

(mA)

3

10

2

10

10

1

−1

10

−2

10

−3

10

−4

10

−5

10

0322481642812 20

(1) T
(2) T
(3) T
(4) T
(5) T

amb
amb
amb
amb
amb

= −40 °C
=25°C
=85°C
= 125 °C
= 150 °C

006aaa075

(5)
(4)

(3)

(2)

(1)

VR (V)

Fig 2. Reverse current as a function of reverse

voltage; typical values

006aaa076

VR (V)

T

=25°C; f = 1 MHz

amb

120

C

d

(pF)

80

40

0

0302010

Fig 3. Diode capacitance as a function of reverse voltage; typical values

9397 750 14638 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 4 April 2005 5 of 10

Philips Semiconductors

8. Package outline

PMEG3015EV

30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier

1.7

1.5

456

0.3

0.1

1.7

1.3

1.5

1.1

Dimensions in mm

pin 1 index

123

0.5
1

0.27

0.17

Fig 4. Package outline SOT666

9. Packing information

Table 8: Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PMEG3015EV SOT666 4 mm pitch, 8 mm tape and reel -115

[1]

4000

0.6

0.5

0.18

0.08

04-11-08

[1] For further information and the availability of packing methods, seeSection 15.

9397 750 14638 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 4 April 2005 6 of 10

Philips Semiconductors

10. Soldering

Obw = Pbw = 2.000 OA

e = 1.000

Ow = 1.700 OA

30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier

OI1 = 2.750 OA

OI = 2.450 OA

PI = 2.100

Obl = Pbl = 1.600 OA

W = 0.300 CU (2x)

W/2 = 0.150 CU (4x)

Wt = 0.375 CU (4x)

Pw = 0.400 (6x)

PMEG3015EV

Ow1 = 0.550 OA (2x)

SOLDER LANDS

0.075

SOLDER RESIST

OCCUPIED AREA

Lb = 1.200 CU
La = 2.200 CU

La1 = 2.500 CU

Reflow soldering is the only recommended soldering method.
Dimensions in mm

Fig 5. Reflow soldering footprint SOT666

PLACEMENT AREA

MSD779

9397 750 14638 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 4 April 2005 7 of 10

Philips Semiconductors

30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier

PMEG3015EV

11. Revision history

Table 9: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

PMEG3015EV_1 20050404 Product data sheet - 9397 750 14638 -

9397 750 14638 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 4 April 2005 8 of 10

Philips Semiconductors

12. Data sheet status

PMEG3015EV

30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier

Level Data sheet status

I Objective data Development This data sheet contains data from the objective specification for product development. Philips

II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published

III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

13. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.

[2] [3]

Definition

Semiconductors reserves the right to change the specification in any manner without notice.

at a later date. Philips Semiconductors reservesthe right to change the specification without notice,in
order to improve the design and supply the best possible product.

right to make changes at any time in order to improve the design, manufacturing and supply.Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).

14. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, andmakesno representations or warranties that these productsare
free from patent, copyright, or mask work right infringement, unless otherwise
specified.

15. Contact information

For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [e-mail]

9397 750 14638 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 4 April 2005 9 of 10

Philips Semiconductors

16. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 6

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . . 9

13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

14 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

15 Contact information . . . . . . . . . . . . . . . . . . . . . 9

PMEG3015EV

30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier

© Koninklijke Philips Electronics N.V. 2005

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 4 April 2005

Document number: 9397 750 14638