Philips PMEG2005AEV, PMEG3005AEV, PMEG4005AEV User Guide

查询PMEG2005AEV供应商

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D744

PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV

Very low V

MEGA Schottky barrier

F

rectifiers

Product specification 2003 Aug 20

Philips Semiconductors Product specification

Very low VF MEGA
Schottky barrier rectifiers

FEATURES

• Very low forward voltage

• High surge current

• Ultra small plastic SMD package.

APPLICATIONS

• Low voltage rectification

• High efficiency DC/DC conversion

• Voltage clamping

• Inverse polarity protection

• Low power consumption applications.

DESCRIPTION

Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a SOT666 ultra small
SMD plastic package.

PMEG2005AEV; PMEG3005AEV;

PMEG4005AEV

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

I

F

V

R

PINNING

forward current 0.5 A
reverse voltage

PMEG2005AEV 20 V
PMEG3005AEV 30 V
PMEG4005AEV 40 V

PIN DESCRIPTION

1 cathode
2 cathode
3 anode
4 anode
5 cathode
6 cathode

handbook, halfpage

123

456

1, 2
5, 6

Fig.1 Simplified outline (SOT666 and symbol).

MARKING

TYPE NUMBER MARKING CODE

PMEG2005AEV G1
PMEG3005AEV G2
PMEG4005AEV G3

RELATED PRODUCTS

TYPE NUMBER DESCRIPTION FEATURE

PMEGxx05AEA 0.5 A; 20/30/40 V very low V
PMEG2005EB 0.5 A; 20 V very low V
PMEG2010EA 1 A; 20 V very low V

F

MEGA Schottky rectifier higher forward current

F

MEGA Schottky rectifier SOD323 (SC-76) package

F

MEGA Schottky rectifier SOD523 (SC-79) package

3, 4

MHC310

2003 Aug 20 2

Philips Semiconductors Product specification

Very low VF MEGA
Schottky barrier rectifiers

PMEG2005AEV; PMEG3005AEV;

PMEG4005AEV

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

R

continuous reverse voltage

PMEG2005AEV − 20 V
PMEG3005AEV − 30 V
PMEG4005AEV − 40 V

I

F

I

FRM

I

FSM

T
T
T

j
amb
stg

continuous forward current note 1 − 0.5 A
repetitive peak forward current tp≤ 1 ms; δ≤0.5; note 2 − 3.5 A
non-repetitive peak forward current tp= 8 ms; square wave; note 2 − 10 A
junction temperature note 3 − 150 °C
operating ambient temperature note 3 −65 +150 °C
storage temperature −65 +150 °C

Notes

1. Refer to SOT666 standard mounting conditions.

2. Only valid if pins 3 and 4 are connected in parallel.

3. ForSchottkybarrierdiodesthermalrunawayhastobeconsidered,asinsomeapplications,thereversepowerlosses
(P

) are a significant part of the total power losses. Nomograms for determination of the reverse power losses P

R

and I

rating will be available on request.

F(AV)

R

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

R

th j-a

th j-s

thermal resistance from junction to
ambient

thermal resistance from junction to

in free air; notes 1 and 2 405 K/W
in free air; notes 2 and 3 215 K/W
note 4 80 K/W

soldering point

Notes

1. Refer to SOT666 standard mounting conditions.

2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P

are a significant part of the total power losses. Nomograms for determination of the reverse power losses PRand

R

I

rating will be available on request.

F(AV)

3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm.

4. Solder point of cathode tab.

2003 Aug 20 3

Philips Semiconductors Product specification

Very low VF MEGA
Schottky barrier rectifiers

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS

V

F

I

R

C

d

Note

1. Pulse test: t

forward voltage IF= 0.1 mA 90 130 90 130 95 130 mV

I

= 1 mA 150 190 150 200 155 210 mV

F

I

= 10 mA 210 240 215 250 220 270 mV

F

I

= 100 mA 280 330 285 340 295 350 mV

F

I

= 500 mA 355 390 380 430 420 470 mV

F

continuous reverse
current

VR= 10 V; note 1 15 40 12 30 7 20 µA
V

= 20 V; note 1 40 200 −−−−µA

R

V

= 30 V; note 1 −−40 150 −−µA

R

V

= 40 V; note 1 −−−−30 100 µA

R

diode capacitance VR= 1 V; f = 1 MHz 66 80 55 70 43 50 pF

≤ 300 µs; δ≤0.02.

p

PMEG2005AEV; PMEG3005AEV;

PMEG4005AEV

PMEG2005AEV PMEG3005AEV PMEG4005AEV

UNIT

TYP. MAX. TYP. MAX. TYP. MAX.

2003 Aug 20 4

Philips Semiconductors Product specification

Very low VF MEGA
Schottky barrier rectifiers

GRAPHICAL DATA

3

10

handbook, halfpage

I

F

(mA)

2

10

(1) (2) (3)

10

1

−1

10

0

PMEG2005AEV

(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=85°C.
=25°C.

VF (V)

MDB675

PMEG2005AEV; PMEG3005AEV;

PMEG4005AEV

5

10

handbook, halfpage

I

R

(µA)

4

10

3

10

2

10

10

0.60.40.2

1

01051520

PMEG2005AEV

(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=85°C.
=25°C.

(1)

(2)

(3)

MDB676

V

(V)

R

Fig.2 Forward current as a function of forward

voltage; typical values.

150

handbook, halfpage

C

d

(pF)

100

50

0

01051520

PMEG2005AEV

f = 1 MHz; T

amb

=25°C.

MDB677

V

(V)

R

Fig.3 Reverse current as a function of reverse

voltage; typical values.

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

2003 Aug 20 5

Philips Semiconductors Product specification

Very low VF MEGA
Schottky barrier rectifiers

3

10

handbook, halfpage

I

F

(mA)

2

10

(1) (2) (3)

10

1

−1

10

0

PMEG3005AEV

(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=85°C.
=25°C.

VF (V)

MDB672

PMEG2005AEV; PMEG3005AEV;

PMEG4005AEV

VR (V)

MDB673

3020100

5

10

handbook, halfpage

I

R

(µA)

4

10

3

10

2

10

10

0.60.40.2

1

PMEG3005AEV

(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=85°C.
=25°C.

(1)

(2)

(3)

Fig.5 Forward current as a function of forward

voltage; typical values.

120

handbook, halfpage

C

d

(pF)

80

40

0

0 5 10 20

PMEG3005AEV

f = 1 MHz; T

amb

=25°C.

MDB674

15

VR (V)

Fig.6 Reverse current as a function of reverse

voltage; typical values.

Fig.7 Diode capacitance as a function of reverse

voltage; typical values.

2003 Aug 20 6

Philips Semiconductors Product specification

Very low VF MEGA
Schottky barrier rectifiers

3

10

handbook, halfpage

I

F

(mA)

2

10

(1) (2) (3)

10

1

−1

10

PMEG4005AEV

(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=85°C.
=25°C.

VF (V)

MDB669

PMEG2005AEV; PMEG3005AEV;

PMEG4005AEV

5

10

handbook, halfpage

I

R

(µA)

4

10

3

10

2

10

10

0.60.40.20

1

02010 30 40

PMEG4005AEV

(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=85°C.
=25°C.

(1)

(2)

(3)

MDB670

VR (V)

Fig.8 Forward current as a function of forward

voltage; typical values.

100

handbook, halfpage

C

d

(pF)

80

60

40

20

0

0 5 10 20

PMEG4005AEV

f = 1 MHz; T

amb

=25°C.

MDB671

15

VR (V)

Fig.9 Reverse current as a function of reverse

voltage; typical values.

Fig.10 Diode capacitance as a function of reverse

voltage; typical values.

2003 Aug 20 7

Philips Semiconductors Product specification

Very low VF MEGA
Schottky barrier rectifiers

PMEG2005AEV; PMEG3005AEV;

PMEG4005AEV

PACKAGE OUTLINE

Plastic surface mounted package; 6 leads SOT666

D

S

YS

A

E

H

E

X

pin 1 index

123

e

DIMENSIONS (mm are the original dimensions)

UNIT b

mm

A

0.6

0.5

0.27

0.17

p

cD

0.18

0.08

1

1.7

1.5

b

p

e

E

1.3

1.1

456

A

wM

A

0 1 2 mm

scale

e

H

L

1.0

e

1

E

1.7

0.5

1.5

0.3

0.1

p

w

0.1y0.1

detail X

c

L

p

OUTLINE

VERSION

SOT666

IEC JEDEC EIAJ

REFERENCES

2003 Aug 20 8

EUROPEAN

PROJECTION

ISSUE DATE

01-01-04
01-08-27

Philips Semiconductors Product specification

Very low VF MEGA
Schottky barrier rectifiers

DATA SHEET STATUS

LEVEL

I Objective data Development This data sheet contains data from the objective specification for product

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

III Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DATA SHEET

STATUS

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

(1)

PRODUCT

STATUS

(2)(3)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

PMEG2005AEV; PMEG3005AEV;

PMEG4005AEV

DEFINITION

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarranty that such applications will be
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result inpersonal injury. Philips
Semiconductorscustomersusingor selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Aug 20 9

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613514/01/pp10 Date of release: 2003 Aug 20 Document order number: 9397 750 11687

SCA75