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M3D319
PMEG3002AEB
Low V
MEGA Schottky barrier
F
diode
Product specification 2002 May 06
Page 2
Philips Semiconductors Product specification
Low VF MEGA Schottky barrier diode
FEATURES
• Forward current: 0.2 A
• Reverse voltage: 30 V
• Very low forward voltage
• Ultra small SMD package.
APPLICATIONS
• Ultra high-speed switching
• High efficiency DC/DC conversion
• Voltage clamping
• Inverse-polarity protection
• Low voltage rectification
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stressprotection,encapsulatedinaSOD523(SC-79)ultra
small SMD plastic package.
PMEG3002AEB
PINNING
PIN DESCRIPTION
1 cathode
2 anode
columns
Marking code: B1.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD523; SC-79) and
12
MGU328
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
F
I
FRM
I
FSM
R
continuous reverse voltage − 30 V
continuous forward current − 200 mA
repetitive peak forward current tp≤ 1s;δ≤0.5 − 300 mA
non-repetitive peak forward current tp= 8.3 ms half sinewave;
− 1A
JEDEC method
T
stg
T
j
T
amb
storage temperature −65 +150 °C
junction temperature − 125 °C
operating ambient temperature −65 +125 °C
2002 May 06 2
Page 3
Philips Semiconductors Product specification
Low VF MEGA Schottky barrier diode
PMEG3002AEB
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
I
R
C
d
continuous forward voltage see Fig.2
I
= 0.1 mA 130 190 mV
F
I
= 1 mA 190 250 mV
F
= 10 mA 255 300 mV
I
F
I
= 100 mA 355 400 mV
F
= 200 mA 420 480 mV
I
F
continuous reverse current VR= 10 V; see Fig.3; note 1 2.5 10 µA
diode capacitance VR= 1 V; f = 1 MHz; see Fig.4 20 25 pF
Note
1. Pulsed test: t
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
note 1 450 K/W
ambient
Note
1. Refer to SOD523 (SC-79) standard mounting conditions.
2002 May 06 3
Page 4
Philips Semiconductors Product specification
Low VF MEGA Schottky barrier diode
GRAPHICAL DATA
0.8
MHC187
VF (V)
10 0.2 0.4 0.6
4
10
handbook, halfpage
I
F
(mA)
3
10
2
10
10
1
(1) T
(2) T
(3) T
amb
amb
amb
= 125 °C.
=85°C.
=25°C.
(1) (2) (3)
4
10
handbook, halfpage
I
R
(µA)
(1) T
(2) T
(3) T
3
10
2
10
10
1
amb
amb
amb
(1)
(2)
(3)
= 125 °C.
=85°C.
=25°C.
PMEG3002AEB
MHC188
VR (V)
3010020
Fig.2 Forward current as a function of forward
voltage; typical values.
40
handbook, halfpage
35
C
d
(pF)
30
25
20
15
10
5
0
01020
f = 1 MHz; T
amb
=25°C.
MHC189
VR (V)
Fig.3 Reverse current as a function of reverse
voltage; typical values.
30
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2002 May 06 4
Page 5
Philips Semiconductors Product specification
Low VF MEGA Schottky barrier diode
PMEG3002AEB
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD523
A
c
vM
H
E
D
12
b
E
p
(1)
OUTLINE
VERSION
SOD523 SC-79
IEC JEDEC EIAJ
A
REFERENCES
A
DIMENSIONS (mm are the original dimensions)
UNIT b
mm
Note
1. The marking bar indicates the cathode.
A
0.7
0.5
0 0.5 1 mm
scale
cD
p
0.35
0.2
0.25
1.3
0.1
1.1
EUROPEAN
PROJECTION
E
0.9
0.7
ISSUE DATE
H
E
1.7
1.5
98-11-25
v
0.15
2002 May 06 5
Page 6
Philips Semiconductors Product specification
Low VF MEGA Schottky barrier diode
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
(1)
STATUS
(2)
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
PMEG3002AEB
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result inpersonal injury. Philips
Semiconductorscustomers using or selling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse of any of these products, conveys nolicenceortitle
under any patent, copyright, or mask work right to these
products,andmakesnorepresentationsorwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2002 May 06 6
Page 7
Philips Semiconductors Product specification
Low VF MEGA Schottky barrier diode
NOTES
PMEG3002AEB
2002 May 06 7
Page 8
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/01/pp8 Date of release: 2002 May 06 Document order number: 9397 750 09622
SCA74
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