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M3D319
PMEG3002AEB
Low V
MEGA Schottky barrier
F
diode
Product specification 2002 May 06
Philips Semiconductors Product specification
Low VF MEGA Schottky barrier diode
FEATURES
• Forward current: 0.2 A
• Reverse voltage: 30 V
• Very low forward voltage
• Ultra small SMD package.
APPLICATIONS
• Ultra high-speed switching
• High efficiency DC/DC conversion
• Voltage clamping
• Inverse-polarity protection
• Low voltage rectification
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stressprotection,encapsulatedinaSOD523(SC-79)ultra
small SMD plastic package.
PMEG3002AEB
PINNING
PIN DESCRIPTION
1 cathode
2 anode
columns
Marking code: B1.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD523; SC-79) and
12
MGU328
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
F
I
FRM
I
FSM
R
continuous reverse voltage − 30 V
continuous forward current − 200 mA
repetitive peak forward current tp≤ 1s;δ≤0.5 − 300 mA
non-repetitive peak forward current tp= 8.3 ms half sinewave;
− 1A
JEDEC method
T
stg
T
j
T
amb
storage temperature −65 +150 °C
junction temperature − 125 °C
operating ambient temperature −65 +125 °C
2002 May 06 2
Philips Semiconductors Product specification
Low VF MEGA Schottky barrier diode
PMEG3002AEB
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
I
R
C
d
continuous forward voltage see Fig.2
I
= 0.1 mA 130 190 mV
F
I
= 1 mA 190 250 mV
F
= 10 mA 255 300 mV
I
F
I
= 100 mA 355 400 mV
F
= 200 mA 420 480 mV
I
F
continuous reverse current VR= 10 V; see Fig.3; note 1 2.5 10 µA
diode capacitance VR= 1 V; f = 1 MHz; see Fig.4 20 25 pF
Note
1. Pulsed test: t
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
note 1 450 K/W
ambient
Note
1. Refer to SOD523 (SC-79) standard mounting conditions.
2002 May 06 3